LN66(L)R [PANASONIC]
5 mm, 1 ELEMENT, INFRARED LED, 950 nm;
| 型号： | LN66(L)R |
| 厂家： | 
PANASONIC |
| 描述： | 5 mm, 1 ELEMENT, INFRARED LED, 950 nm 光电 |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LN66
GaAs Infrared Light Emitting Diode
Unit : mm
ø5.0±0.2
For optical control systems
Features
High-power output, high-efficiency : PO = 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to inpt current
Wide directivity : θ = 25 deg. (typ.)
2-1.0±0.15
2-0.6±0.15
Transparent epoxy resin package
2.54
Absolute Maximum Ratings Ta = 25˚C)
2
1
Parameter
ymbol
Ratings
Unit
mW
mA
A
1: Cathode
2: Anode
Power dissipation
P
IF
160
100
Forward current (DC)
Pulse forward curent
Reverse voltage DC)
Operating ambiet temperature
Storae temratue
*
IFP
1.
VR
T
T
3
V
–25 o +85
0 to +100
˚C
˚C
*
= 100 Hzcycle = 0.1 %
ElecCharacteristics (Ta = 25˚C)
Par
Radiant power
Symbol
Conditions
min
typ
8
max
Unit
mW
nm
nm
V
*
PO
IF = 50mA
5
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
λP
∆λ
VF
IR
IF = 50mA
950
50
IF = 50mA
IF = 100mA
1.3
1.6
10
VR = 3V
µA
pF
Ct
θ
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
35
25
deg.
* PO Classifications
Class
R
S
PO (mW)
5 to 8
>7
1
Infrared Light Emitting Diodes
LN66
IF — Ta
I
FP — Duty cycle
IF — VF
120
120
100
80
60
0
tw = 10µs
Ta = 25˚C
10 2
10
1
Ta = 25˚C
100
80
60
10 –1
10 –2
40
20
0
13
– 25
0
20
40
60
80
100
10 –2
–1
1
10
2
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
V— Ta
∆PO — Ta
1.6
1
0.4
0
10
1) tw s
f = Hz
(DC
10 3
IF = 50mA
a = 25˚C
IF = 100mA
10 2
10
50mA
10mA
1
(1)
(2)
10 –1
10 –
0 –2
10 –2
– 40
1
2
10 3
10 4
– 40
0
40
80
120
0
40
80
120
Punt IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚
100
10˚
20˚
1000
980
960
940
920
900
100
80
60
40
20
0
I
F = 50mA
IF = 50mA
Ta = 25˚C
90
80
70
60
50
40
30
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
– 40
0
40
80
120
860 900 940 980 1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
LN66
Infrared Light Emitting Diodes
Frequency characteristics
10
1
Ta = 25˚C
10 –1
10 –2
10 –3
10
10 2
10 3
10 4
Frequency f (kHz)
3
Caution for Safety
¢ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
DANGER
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equipment, communications equipment, measurng inruments and household apliances).
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