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2SC5378R [PANASONIC]

TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323 ; 晶体管| BJT | NPN | 8V V（ BR ） CEO | 80MA I（C ） | SOT- 323\n
2SC5378R
型号： 2SC5378R
厂家： PANASONIC    PANASONIC
描述：

TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323
晶体管| BJT | NPN | 8V V（ BR ） CEO | 80MA I（C ） | SOT- 323\n

晶体 晶体管
文件： 总2页 (文件大小：34K)
中文：  中文翻译
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Transistor  
2SC5378  
Silicon NPN epitaxial planer type  
For low-voltage low-noise high-frequency oscillation  
Unit: mm  
2.1±0.1  
Features  
Low noise figure NF.  
0.425  
1.25±0.1  
0.425  
■
●
●
High gain.  
1
●
High transition frequency fT.  
3
●
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
■
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
8
V
1:Base  
2:Emitter  
3:Collector  
2
80  
V
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking symbol : HT  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
■
Parameter  
Symbol  
ICBO  
IEBO  
Conditions  
min  
typ  
max  
1
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Collector output capacitance  
Transition frequency  
Noise figure  
VCB = 10V, IE = 0  
VEB = 1V, IC = 0  
CE = 5V, IC = 10mA  
1
µA  
*1  
hFE  
Cob  
fT  
V
80  
200  
1
VCB = 5V, IE = 0, f = 1MHz  
0.6  
7
pF  
GHz  
dB  
VCE = 5V, IC = 10mA, f = 2GHz  
VCE = 5V, IC = 3mA, f = 1GHz  
VCE = 5V, IC = 10mA, f = 1GHz  
NF  
| S21e  
1.6  
11  
2
2
Foward transfer gain  
|
8.5  
dB  
*1  
h
Rank classification  
FE  
Rank  
hFE  
Q
R
S
80 ~ 115  
95 ~ 155  
135 ~ 200  
1
Transistor  
2SC5378  
PC — Ta  
IC — VCE  
hFE — IC  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
180  
150  
120  
90  
Ta=25˚C  
VCE=5V  
Ta=75˚C  
25˚C  
IB=600µA  
500µA  
400µA  
–25˚C  
300µA  
200µA  
60  
40  
30  
100µA  
0
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
1
3
10  
30  
100 300 1000  
(
)
( )  
V
(
)
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Collector current IC mA  
2

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