2SC5379R [ETC]
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-346 ; 晶体管| BJT | NPN | 8V V（ BR ） CEO | 80MA I（C ） | SOT- 346\n
| 型号： | 2SC5379R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-346
|
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
1.6±0.15
0.8±0.1
0.4
0.4
Features
■
●
Low noise figure NF.
1
●
High gain.
●
High transition frequency fT.
3
●
SS-Mini type package, allowing downsizing of the equipment
2
and automatic insertion through the tape packing.
Absolute Maximum Ratings (Ta=25˚C)
■
0.2±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
8
V
1:Base
2:Emitter
3:Collector
2
80
V
EIAJ:SC–75
SS–Mini Type Package
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
125
Marking symbol : HT
Tj
125
Tstg
–55 ~ +125
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
80
typ
max
1
Unit
µA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
VCB = 10V, IE = 0
IEBO
VEB = 1V, IC = 0
1
µA
*
hFE
VCE = 5V, IC = 10mA
200
fT
VCE = 5V, IC = 10mA, f = 2GHz
VCB = 5V, IE = 0, f = 1MHz
VCE = 5V, IC = 10mA, f = 1GHz
VCE = 5V, IC = 3mA, f = 1GHz
7.0
0.6
GHz
pF
Cob
| S21e
NF
1.0
2
2
|
8.5
11.0
1.6
dB
dB
*hFE Rank classification
Rank
hFE
Q
R
S
80 ~ 115
HTQ
95 ~ 155
HTR
135 ~ 200
HTS
Marking Symbol
1
Transistor
2SC5379
PC — Ta
IC — VCE
IC — VBE
150
125
100
75
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Ta=25˚C
VCE=5V
25˚C
Ta=75˚C
–25˚C
IB=300µA
250µA
200µA
50
150µA
100µA
25
50µA
0
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
(
V
)
(
V
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base to emitter voltage VBE
VCE(sat) — IC
hFE — IC
fT — IC
100
240
10
8
IC/IB=10
VCE=5V
VCE=5V
30
10
200
160
120
80
Ta=75˚C
25˚C
3
1
6
4
–25˚C
0.3
0.1
Ta=75˚C
25˚C
–25˚C
2
40
0.03
0.01
0
0.1
0
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
0
4
8
12
16
20
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector current IC mA
Cob — VCB
| S21e |2 — IC
NF — IC
1.0
15
12
9
3.0
2.4
1.8
1.2
0.6
0
VCE=5V
f=1GHz
Ta=25˚C
0.8
0.6
0.4
0.2
0
6
3
VCE=5V
f=1GHz
Ta=25˚C
0
0
2
4
6
8
10
0
4
8
12
16
20
0
2
4
6
8
10
(
V
)
(
)
(
)
Collector to base voltage VCB
Collector current IC mA
Collector current IC mA
2
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2001 MAR
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