2SC5382 [SHINDENGEN]
Switching Power Transistor(6A NPN); 开关功率晶体管（ NPN 6A ）
| 型号： | 2SC5382 |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | Switching Power Transistor(6A NPN) |
| 文件： | 总10页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
Switching Power Transistor
OUTLINE DIMENSIONS
Case : FTO-220
2SC5382
Unit : mm
6A NPN
RATINGS
●AbsoluteMaximum Ratings
Item
Symbol
Tstg
Tj
VCBO
VCEO
VEBO
Conditions
Ratings Unit
-55～150 ℃
StorageTemperature
JunctionTemperature
CollectortoBaseVoltage
CollectortoEmitterVoltage
EmittertoBaseVoltage
CollectorCurrent DC
150
1200
550
9
℃
V
V
V
I
6
A
C
CollectorCurrent Peak
BaseCurrent DC
I
I
B
12
3
CP
A
BaseCurrent Peak
I
6
40
2
0.5(0.3)
BP
TotalTransistorDissipation
DielectricStrength
PT
Vdis
TOR
W
Terminalstocase, AC 1minute
(Recommendedtorque)
kV
MountingTorque
N･m
●ElectricalCharacteristics(Tc=25℃)
Item
Conditions
Symbol
Ratings Unit
Min550
CollectortoEmitterSustainingVoltage
CollectorCutoffCurrent
V (sus) I =0.1A
V
C
CEO
I
CBO
VCB =1200V
Max 0.1 mA
Max 0.1
I
CEO
VCE =550V
VEB =9V
EmitterCutoffCurrent
DC CurrentGain
I
Max 0.1 mA
M in 10
M in 10
EBO
hFE
hFEL
VCE =5V, I =3A
C
VCE =5V, I =1mA
C
CollectortoEmitterSaturationVoltage
BasetoEmitterSaturationVoltage
V (sat) I =3A
Max 1.0
Max 1.5
V
V
C
CE
V (sat) I =0.6A
B
BE
ThermalResistance
TurnonTime
θjc
ton
ts
Junctiontocase
I =3A
Max3.13 ℃/W
Max 1.3
Max 4.0 μs
Max 0.3
C
StorageTime
FallTime
I =0.6A, I =1.2A
B1 B2
tf
RL =50Ω, VBB2 =4V
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
F E
D C C u r r e n t G a i n h
B E
[ V ]
B a s e - E m i t t e r V o l t a g e V
C E
[ V ]
C o l l e c t o r - E m i t t e r V o l t a g e V
2SC5382
Switching Time - IC
10
t
s
1
t
on
t
f
0.1
I
I
= 0.2I
= 0.4I
B1
C
C
B2
V
V
= 4V
= 150V
BB2
CC
Tc = 25°C
0.01
0
1
2
3
4
5
6
Collector Current IC [A]
2SC5382
Switching Time - VCC
10
t
s
t
on
1
t
f
0.1
I = 3A
C
I
B1
I
B2
= 0.6A
= 1.2A
V
BB2
= 4V
Tc = 25°C
0.01
0
50
100
150
200
250
300
Collector Voltage VCC [V]
2SC5382
Switching Time - Tc
10
t
s
t
on
1
t
f
0.1
I = 3A
C
I
B1
I
B2
= 0.6A
= 1.2A
V
BB2
= 4V
R = 50W
L
0.01
0
50
100
150
Case Temperature Tc [°C]
2SC5382
Forward Bias SOA
12
10
10ms
1ms
200ms
100ms
DC
P limit
T
1
I
limit
S/B
0.1
Tc = 25°C
Single Pulse
0.01
1
10
100
550
Collector-Emitter Voltage VCE [V]
2SC5382
Collector Current Derating
100
80
60
40
20
0
I
limit
S/B
P limit
T
V
CE
= fixed
0
50
100
150
Case Temperature Tc [°C]
2SC5382
Reverse Bias SOA
12
10
8
6
4
2
I
I
V
= 0.3I
C
B1
= 1.8A
= 5V
B2
BB2
Tc < 150°C
0
0
100
200
300
400
500
600
700
800
Collector-Emitter Voltage VCE [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
相关型号：
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
ISAHAYA
2SC5383
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, NPN, Silicon, ULTRA SUPER MINI PACKAGE
MITSUBISHI
2SC5384
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
ISAHAYA
2SC5384
Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, NPN, Silicon, ULTRA SUPER MINI PACKAGE
MITSUBISHI
2SC5384_10
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
ISAHAYA
©2020 ICPDF网 联系我们和版权申明