2SC5382 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5382 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5382
DESCRIPTION
·With TO-220F package
·High Voltage
·High speed switching
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
1200
550
V
Open collector
9
V
6
A
ICM
Collector current-peak
Base current
12
A
IB
3
6
A
IBM
Base current-peak
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
3.13
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5382
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; IB=0
Collector-emitter saturation voltage IC=3A; IB=0.6 A
550
V
V
V
1.0
1.5
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6 A
ICBO
ICEO
IEBO
Collector cut-off current
Collector cut-off current
Emitter cut-off current
VCB=1200V; IE=0
VCE=550V; IB=0
VEB=9V; IC=0
0.1
0.1
0.1
mA
mA
mA
hFE-1
DC current gain
DC current gain
IC=3A ; VCE=5V
10
10
hFE-2
IC=1mA ; VCE=5V
Switching times
ton
Turn-on time
1.3
4.0
0.3
μs
μs
μs
IC=3A;IB1=0.6A ;IB2=1.2A
RL=50Ω;VBB2=4V
ts
Storage time
Fall time
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5382
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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