2SC3704TMG [PANASONIC]
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN;
| 型号： | 2SC3704TMG |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN 晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器 |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC3704
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.8 –+00..32
0.65±0.15
1.5 –+00..0255
0.65±0.15
Features
Low noise figure NF.
■
●
●
High gain.
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
●
3
●
0.1 to 0.3
Absolute Maximum Ratings (Ta=25˚C)
■
0.4±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
10
V
1:Bae
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2
80
V
2:Emitter
3:Collector
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Marking symbol :2W
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
1
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 15V, IE = 0
IEBO
hFE1
hFE2
fT
VEB = 1V, IC = 0
1
µA
VCE = 8V, IC = 20mA
50
80
150
300
280
Forward current transfer ratio
VCE = 1V, IC = 3mA
Transition frequency
VCE = 8V, IC = 20mA, f = 0.8GHz
VCE = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 7mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
6
GHz
pF
Collector output capacitance
Noise figure
Cob
0.7
1.0
14
13
1.2
1.7
NF
dB
Maximum unilateral power gain
Foward transfer gain
GUM
dB
2
| S21e
|
dB
1
Transistor
2SC3704
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
60
50
40
30
20
10
0
120
100
80
60
40
20
0
IB=400µA
Ta=25˚C
350µA
VCE=8V
300µA
250µA
200µA
150µA
25˚C
Ta=75˚C
–25˚C
100µA
50µA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
600
12
10
8
IC/IB=10
VCE=8V
f=800MHz
Ta=25˚C
VCE=8V
30
10
500
400
300
200
100
0
3
1
Ta=75˚C
6
25˚C
0.3
0.1
4
Ta=75˚C, 25˚C, –25˚C
–25˚C
2
0.03
0.01
0
0.1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector current IC mA
Cob — VCB
GUM — IC
NF — IC
2.4
24
20
16
12
8
6
5
4
3
2
1
0
IE=0
f=1MHz
Ta=25˚C
VCE=8V
f=800MHz
Ta=25˚C
VCE=8V
(Rg=50W)
f=800MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
4
0
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
(
V
)
(
)
(
)
Collector to base voltage VCB
Collector current IC mA
Collector current IC mA
2
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