2SC3707 [TYSEMI]
Possible with the small current and low voltage High transition frequency fT; 可以用小电流，低电压的高转换频率fT的
| 型号： | 2SC3707 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Possible with the small current and low voltage High transition frequency fT |
| 文件： | 总1页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
2SC3707
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Possible with the small current and low voltage
High transition frequency fT
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
10
Collector-emitter voltage
Emitter-base voltage
Collector current
7
V
2
10
V
mA
mW
Collector power dissipation
Junction temperature
Storage temperature
PC
50
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
Min
50
Typ
Max
1
Unit
ìA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
VCB = 10 V, IE = 0
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 1 mA
1
ìA
150
fT
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCB = 1 V, IE = 0, f = 1 MHz
4
GHz
pF
Collector output capacitance
Forward transfer gain
Maximum unilateral power gain
Noise figure
Cob
0.4
6.0
15
|S21e|2
GUM
NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
dB
dB
3.5
dB
Marking
Marking
2X
http://www.twtysemi.com
1 of 1
sales@twtysemi.com
4008-318-123
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