2SC3707 [PANASONIC]
Silicon NPN epitaxial planer type(For UHF amplification); NPN硅外延平面型（超高频放大）
| 型号： | 2SC3707 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For UHF amplification) |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC3707
Silicon NPN epitaxial planer type
For UHF amplification
Unit: mm
2.8 –+00..32
0.65±0.15
1.5 –+00..0255
0.65±0.15
Features
■
●
Possible with the small current and low voltage.
●
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
●
3
0.1 to 0.3
Absolute Maximum Ratings (Ta=25˚C)
■
0.4±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
10
7
V
1:Bae
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2
10
V
2:Emitter
3:Collector
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
50
Marking symbol : 2X
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
1
Unit
nA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
VCB = 10V, IE = 0
IEBO
hFE
fT
VEB = 1.5V, IC = 0
1
µA
VCE = 1V, IC = 1mA
50
100
4
150
VCE = 1V, IC = 1mA, f = 800MHz
VCB = 1V, IE = 0, f = 1MHz
VCE = 1V, IC = 1mA, f = 800MHz
VCE = 1V, IC = 1mA, f = 800MHz
VCE = 1V, IC = 1mA, f = 800MHz
GHz
pF
Collector output capacitance
Foward transfer gain
Cob
| S21e
0.4
6
2
|
dB
Maximum unilateral power gain
Noise figure
GUM
NF
15
3.5
dB
dB
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
1
Transistor
2SC3707
PC — Ta
IC — VCE
IC — VBE
100
75
50
25
0
6
5
4
3
2
1
0
60
50
40
30
20
10
0
Ta=25˚C
VCE=1V
IB=50µA
45µA
40µA
35µA
30µA
25˚C
Ta=75˚C –25˚C
25µA
20µA
15µA
10µA
5µA
0
20 40 60 80 100 120 140 160
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.4
0.8
1.2
1.6
2.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
240
12
10
8
IC/IB=10
VCE=1V
f=800MHz
Ta=25˚C
VCE=1V
30
10
200
160
120
80
3
1
Ta=75˚C
25˚C
6
Ta=75˚C
25˚C
0.3
0.1
4
–25˚C
–25˚C
40
2
0.03
0.01
0
0.1
0
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector current IC mA
Cob — VCB
GUM — IC
NF — IC
1.2
24
20
16
12
8
6
5
4
3
1
1
0
IE=0
f=1MHz
Ta=25˚C
VCE=1V
f=800MHz
Ta=25˚C
VCE=1V
(Rg=50Ω)
f=800MHz
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
4
0
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
( )
V
(
)
(
)
Collector to base voltage VCB
Collector current IC mA
Collector current IC mA
2
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