SFH-4750 [OSRAM]
OSTAR® - Lighting IR 6-fold with Optics (850nm);
| 型号： | SFH-4750 |
| 厂家： | 
OSRAM GMBH |
| 描述： | OSTAR® - Lighting IR 6-fold with Optics (850nm) |
| 文件： | 总7页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OSTAR® - Lighting IR 6-fold with Optics (850nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4750
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
Features
• 3.5 W optische Leistung bei IF=1A
• Aktive Chipfläche 2.1 x 3.2 mm2
• max. Gleichstrom 1 A
• 3.5 W optical power at IF=1A
• Active chip area 2.1 x 3.2 mm2
• max. DC-current 1 A
• niedriger Wärmewiderstand (3 K/W)
• Emissionswellenlänge 850 nm
• ESD-sicher bis 2 kV nach JESD22-A114-B
• Low thermal resistance (3 K/W)
• Spectral emission at 850 nm
• ESD save up to 2 kV acc. to JESD22-A114-B
Anwendungen
Applications
• Infrarotbeleuchtung für Kameras
• Überwachungssysteme
• Infrared Illumination for cameras
• Surveillance systems
• IR-Datenübertragung
• IR Data Transmission
• Verkehrsüberwachungssysteme
• Beleuchtung für Bilderkennungssysteme
• Nicht für Anwendungen im Automobilbereich
• Intelligent Transportation Systems
• Machine vision systems
• Not released for automotive applications
Sicherheitshinweise
Safety Advices
Je nach Betriebsart emittieren diese Bauteile Depending on the mode of operation, these
hochkonzentrierte, nicht sichtbare Infrarot- devices emit highly concentrated non visible
Strahlung, die gefährlich für das menschliche infrared light which can be hazardous to the
Auge sein kann. Produkte, die diese Bauteile human eye. Products which incorporate these
enthalten, müssen gemäß den Sicherheits- devices have to follow the safety precautions
richtlinien der IEC-Normen 60825-1 und 62471 given in IEC 60825-1 and IEC 62471.
behandelt werden.
Typ
Type
Bestellnummer
Ordering Code
Strahlstärke1) (IF = 1A, tp = 20 ms)
Radiant intensity1) Ιe (mW/sr)
SFH 4750
Q65110A8280
> 630 (typ. 1000)
1)
gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr.
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SFH 4750
Grenzwerte TB1) = 25 °C
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
TB, op , TB, stg
– 40 … + 100
°C
Operating and storage temperature range
Sperrschichttemperatur
Junction temperature
TJ
+ 145
0.5
1
°C
V
Sperrspannung
Reverse voltage
VR
Vorwärtsgleichstrom
Forward current
IF
A
Stoßstrom, tp = 100 µs, D = 0
Surge current
IFSM
Ptot
Pth
RthJB
5
A
Leistungsaufnahme,
Power consumption
12
9.8
3
W
W
K/W
Thermische Verlustleistung
Thermal power-dissipation
Wärmewiderstand Sperrschicht / Bodenplatte
Thermal resistance Junction / Base plate
1)
TB = Temperatur auf der Rückseite der Metallkernplatine / Temperature at the backside of the base plate.
Kennwerte (TB = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 1 A, tp = 10 ms
λpeak
λcentroid
Δλ
860
850
30
nm
nm
nm
Schwerpunkts-Wellenlänge der Strahlung
Centroid wavelength
IF = 1 A, tp = 10 ms
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 1 A, tp = 10 ms
Abstrahlwinkel
Half angle
ϕ
± 70
Grad
deg.
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SFH 4750
Kennwerte (TB = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Abmessungen der aktiven Chipfläche1)
Dimension of the active chip area
L × B
L × W
2.1 × 3.2
mm²
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, IF = 1 A, RL = 50 Ω
10, 10
ns
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 1 A, RL = 50 Ω
Durchlassspannung
Forward voltage
IF = 1 A, tp = 100 µs
VF
9.5 (< 12)
3.5
V
Gesamtstrahlungsfluss
Total radiant flux
IF = 1 A, tp = 100 μs
Φe typ
TCI
W
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie or Φe
IF = 1 A, tp = 10 ms
– 0.3
– 6
%/K
mV/K
nm/K
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 1 A, tp = 10 ms
TCV
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 1 A, tp = 10 ms
TCλ,centroid
+ 0.3
1)
Die aktive Chipfläche besteht aus 6 einzelnen Chips mit je 1 x 1 mm².
The active chip area consists of 6 single chips with 1 x 1 mm² each.
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SFH 4750
Strahlstärke1) Ιe
Radiant Intensity1) Ιe
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
SFH 4750 -EA
SFH 4750 -EB
Strahlstärke
Radiant Intensity
IF = 1 A, tp = 20 ms
Ιe min
Ιe max
630
1000
800
1250
mW/sr
mW/sr
1)
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1)
Only one group in one packing unit (variation lower 1.6:1)
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
40˚
30˚
20˚
10˚
0˚
OHF04180
1.0
50˚
0.8
0.6
60˚
70˚
0.4
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
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SFH 4750
Relative spektrale Emission
Relative Spectral Emission
Durchlassstrom
Forward Current
Relativer Gesamtstrahlungsfluss
Relative Total Radiant Flux
Φe/Φe(1A) = f (IF), TB = 25 °C,
Single pulse, tp = 100 μs
Irel = f (λ), TB = 25 °C
IF = f (VF), TB = 25 °C,
Single pulse, tp = 100 μs
OHF04132
OHF04166
OHF03848
101
101
100
A
Φe
e (1 A)
%
Irel
IF
Φ
80
60
40
20
0
100
100
5
5
10-1
5
10-1
5
10-2
5
10-2
10-3
10-2
5
10-1
5
100
A
101
IF
5
7
9
11
13 V 15
700
750
800
850
nm 950
λ
VF
Max. zulässiger Durchlassstrom
Max. Permissible Forward Current
IF = f (TB), RthJB = 3 K/W
Zulässige Impulsbelastbarkeit
Permissible Pulse Handling
Capability IF = f (tp), TB = 85 °C,
Duty cycle D = parameter
OHF04168
OHF04167
1.2
5.5
A
tP
A
tP
IF
IF
IF
D
= T
T
1.0
0.8
0.6
0.4
0.2
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.33
0.5
1
10-5 10-4 10-3 10-2 10-1 100 101 s 102
0
20
40
60
80
˚C 120
TB
tp
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SFH 4750
Anschlusskontaktierung
Contacting
Drahttyp Durchmesser Lötspitze
Temperatur
Lötzeit
Wire type Diameter
Solder Tip
Temperature Solder Time
AWG 18 ~0.8 mm
(Litze;
3.2 mm
(Meisel;
Chisel)
250 °C
350 °C
16 sec.
6 sec
flexible wire)
AWG 20 ~0.5 mm
(Litze;
3.2 mm
(Meisel;
Chisel)
250 °C
350 °C
14 sec.
5 sec
flexible wire)
AWG 22 ~0.3 mm
(Litze;
3.2 mm
(Meisel;
Chisel)
250 °C
350 °C
9 sec.
3 sec
flexible wire)
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SFH 4750
Maßzeichnung und Ersatzschaltbild
Package Outlines and equivalent circuit diagram
Maße in mm (inch) / Dimensions in mm (inch).
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2009-07-10
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