SFH-4113 [OSRAM]
GaAs-IR-Lumineszenzdiode mit 3/4 Linse;
| 型号： | SFH-4113 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAs-IR-Lumineszenzdiode mit 3/4 Linse |
| 文件： | 总7页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs-IR-Lumineszenzdiode mit 3/4 Linse (950nm)
GaAs Infrared Emitter with 3/4 lens (950nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4113
Wesentliche Merkmale
Features
• Wellenlänge der Strahlung 950 nm
• Hohe Strahlstärke
• Peak wavelength of 950 nm
• High radiant intensity
• Geringe Außenabmessungen
• Small outline dimensions
Anwendungen
Applications
• Bandende Erkennung (z.B. Videorecorder)
• Datenübertragung
• Tape end detection (VCR e.g.)
• Data transmission
• Positionsüberwachung
• Barcode-Leser
• Position sensing
• Barcode reader
• „Messen/Steuern/Regeln“
• Münzzähler
• For control and drive circuits
• Coin counters
Typ
Type
Bestellnummer
Ordering Code
Ee1) [mW/cm²]
at d2)=6mm, If=4mA
SFH 4113
Q62702P5299
0.25 - 1.25
1)
Auf einem Detektor erzeugte Bestrahlungsstärke.
Irradiance generated on a detector.
2)
Entfernung zwischen Vorderseite Beinchen und Detektorebene.
Distance between leadframe front side and detection area.
2007-04-03
1
SFH 4113
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 85
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF (DC)
IFSM
50
1
mA
A
Stoßstrom, tp = 10 μs, D = 0
Surge current
Verlustleistung
Power dissipation
Ptot
75
450
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung
Thermal resistance junction - ambient
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
λpeak
Δλ
ϕ
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
55
nm
Abstrahlwinkel horizontal/ vertikal
Half angle horizontal/ vertical
± 33/ 43
0.09
Grad
deg.
Aktive Chipfläche
Active chip area
mm2
mm²
µs
A
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3
0.5
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 50 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 50 mA, RL = 50 Ω
Kapazität,
Co
40
pF
Capacitance
VR = 0 V, f = 1 MHz
2007-04-03
2
SFH 4113
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Durchlaßspannung,
Forward voltage
IF = 20 mA, tp = 20 ms
VF
1.25 (≤ 1.6)
0.01 (≤ 1.0)
3.5
V
Sperrstrom,
Reverse current
VR = 5V
IR
μA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 20 mA, tp = 20 ms
Φe
TCI
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 20 mA
– 1.1
Temperature coefficient of Ie or Φe,
IF = 20 mA
Temperaturkoeffizient von VF, IF = 20 mA
Temperature coefficient of VF, IF = 20 mA
TCV
TCλ
– 1.3
+ 0.3
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 20 mA
Temperature coefficient of λ, IF = 20 mA
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
1)
Bestrahlungsstärke1)
Irradiance1)
Ee
0.25 ... 1.25
mW/cm²
d2) = 6mm, IF = 4mA, tp = 20 ms
1)
Auf einem Detektor erzeugte Bestrahlungsstärke.
Irradiance generated on a detector.
2)
Entfernung zwischen Vorderseite Beinchen und Detektorebene.
Distance between leadframe front side and detection area.
2007-04-03
3
SFH 4113
Ie
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ie 100 mA
Single pulse, tp = 20 μs
OHR01938
OHL01541
OHF00369
101
100
%
70
Ιe
mA
Ιe (100 mA)
60
Ι rel
IF
80
100
RthJA = 480 K/W
50
60
40
20
0
40
30
20
10
0
10-1
10-2
10-3
0
20
40
60
80 ˚C 100
10-1
100
101
102 mA 103
880
920
960
1000
nm
1060
TA
λ
Ι F
Forward Current
Radiation Characteristics/ vertical
Ιrel = f (ϕ)
IF = f (VF), Single pulse, tp = 20 μs
OHF00367
104
0˚
OHL01545
mA
-90˚
1.0
Ι F
103
102
101
100
10-1
10-2
+90˚
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
V
4
-120˚ -100˚ -80˚
-60˚
-40˚
-20˚
0˚
20˚
40˚
60˚
80˚
100˚
120˚
VF
Radiation Characteristics/ horiz
rel = f (ϕ)
Ι
40˚
30˚
20˚
10˚
0˚
OHL01544
1.0
ϕ
+90˚
-90˚
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
2007-04-03
4
SFH 4113
Maßzeichnung
Package Outlines
±0.25
2.1
(0.75)
R0.75
±0.25
3
Area not flat
±0.1
±0.1
0.3
60˚
(0.8)
1
2
±0.2
1.4
0.1 max.
0.1 max.
±0.1
±0.1
0.5
0.5
2.54
Pinout
1
2
1. Cathode
2. Anode
±0.1
R0.75
±0.25
1.8
GEO06054
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-03
5
SFH 4113
Empfohlenes Lötpaddesign
Recommended Solder Pad
Wellenlöten (TTW)
TTW Soldering
4 (0.157)
OHLPY985
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-03
6
SFH 4113
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-03
7
相关型号：
©2020 ICPDF网 联系我们和版权申明