SFH-421 [OSRAM]
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse;
| 型号： | SFH-421 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse
GaAlAs Infrared Emitter in SMT Package
SFH 421
SFH 426
SFH 421
SFH 426
Wesentliche Merkmale
Features
• GaAIAs-LED mit sehr hohem Wirkungsgrad
• Gute Linearität (Ie = f [IF]) bei hohen Strömen
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Very highly efficient GaAIAs-LED
• Good Linearity (Ie = f [IF]) at high currents
• DC (with modulation) or pulsed operations are
possible
• Hohe Zuverlässigkeit
• High reliability
• Hohe Impulsbelastbarkeit
• Oberflächenmontage geeignet
• Gegurtet lieferbar
• High pulse handling capability
• Suitable for surface mounting (SMT)
• Available on tape and reel
• SFH 421 Gehäusegleich mit SFH 320
SFH 426 Gehäusegleich mit SFH 325
• SFH 426: Nur für IR-Reflow-Lötung geeignet.
• SFH 421 same package as SFH 320
SFH 426 same package as SFH 325
• SFH 426: Suitable only for IR-reflow soldering.
Anwendungen
Applications
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Miniature photointerrupters
• Industrial electronics
• For drive and control circuits
• Automotive technology
• Sensor technology
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
• Alarm and safety equipment
• IR free air transmission
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
Kathodenkennzeichnung: abgesetzte Ecke
cathode marking: bevelled edge
TOPLED®
SFH 421
SFH 426
Q62702-P1055
Q62702-P0331
SIDELED
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SFH 421, SFH 426
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
100
2.5
180
450
mA
A
Stoßstrom, τ = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung bei RthJA
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
RthJS
≈ 200
K/W
Thermal resistance junction - soldering point,
mounted on metal block
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SFH 421, SFH 426
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
880
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 m A
∆λ
80
nm
Abstrahlwinkel
Half angle
ϕ
± 60
Grad
deg.
Aktive Chipfläche
Active chip area
0.09
mm2
mm
µs
A
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3
0.5
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
Kapazität,
Co
15
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (≤ 1.8)
3.0 (≤ 3.8)
V
V
Sperrstrom,
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
TCI
23
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
– 0.5
Temperature coefficient of Ie or Φe, IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 2
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
+ 0.25
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SFH 421, SFH 426
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
Strahlstärke
Ie
> 4
mW/sr
Radiant intensity
IF = 100 mA, tp = 20 ms
Strahlstärke
Ie typ
48
mW/sr
Radiant intensity
IF = 1 A, tp = 100 µs
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SFH 421, SFH 426
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ιe 100 mA
Single pulse, tp = 20 µs
OHR00878
OHR00877
10 2
OHR00883
100
%
120
Ι e
mA
Ι F
Ι e (100mA)
Ι rel
10 1
10 0
100
80
80
60
40
20
0
RthjA = 450 K/W
60
40
20
0
10 -1
10 -2
10 -3
0
20
40
60
80
100 ˚C 120
10 0
10 1
10 2
10 3 mA 10 4
750
800
850
900
950 nm 1000
λ
TA
Ι F
Forward Current
IF = f (VF) single pulse, tp = 20 µs
Permissible Pulse Handling
Capability IF = f (tp), TA = 25 °C
duty cycle D = parameter
OHR00886
104
OHR00881
10 1
mA
A
Ι F
Ι F
D
= 0.005
0.01
0.02
0.05
10 0
10 -1
10 -2
10 -3
103
102
101
0.1
0.2
0.5
DC
t p
t p
D =
Ι F
T
T
0
1
2
3
4
5
6
V
8
10-5 10-4 10-3 10-2 10-1 100 101 s 102
t p
VF
Radiation Characteristics Sel = f (ϕ)
OHL01660
40˚
30˚
20˚
10˚
0˚
ϕ
1.0
50˚
0.8
0.6
0.4
0.2
0
60˚
70˚
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
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SFH 421, SFH 426
Maßzeichnung
Package Outlines
SFH 421
2.1 (0.083)
1.7 (0.067)
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
0.1 (0.004) (typ.)
0.9 (0.035)
0.7 (0.028)
2.1 (0.083)
Cathode marking
0.18 (0.007)
0.12 (0.005)
0.6 (0.024)
0.4 (0.016)
GPLY6724
SFH 426
(2.4 (0.094))
(2.85 (0.112))
1.1 (0.043)
0.9 (0.035)
Anode
2.54 (0.100)
spacing
Cathode
(1.4 (0.055))
Cathode marking
(R1)
4.2 (0.165)
3.8 (0.150)
GPLY6880
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
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SFH 421, SFH 426
Löthinweise
Soldering Conditions
Bauform
Types
Tauch-, Schwall- und Schlepplötung
Reflowlötung
Reflow Soldering
Dip, Wave and Drag Soldering
Lötbad-
temperatur
Maximal
zulässige
Lötzeit
Abstand
Lötstelle –
Gehäuse
Lötzonen-
temperatur
Maximale
Durchlaufzeit
Temperature
of the
Soldering
Bath
Max. Perm.
Soldering
Time
Distance
between
Solder Joint
and Case
Temperature
of Soldering
Zone
Max. Transit
Time
TOPLED®
SIDELED
260 °C
260 °C
8 s
8 s
–
–
245 °C
245 °C
10 s
10 s
Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage.
For additional information on general soldering conditions please contact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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