SFH-303-FA [OSRAM]
NPN-Silizium-Fototransistor;
| 型号： | SFH-303-FA |
| 厂家： | 
OSRAM GMBH |
| 描述： | NPN-Silizium-Fototransistor |
| 文件： | 总7页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 303 FA
SFH 303 FA
Wesentliche Merkmale
Features
• Spektraler Bereich der Fotoempfindlichkeit:
730 nm ...1100 nm
• Spectral Range of Sensitivity:
730 nm ... 1100 nm
• Gehäuse: 5 mm Radial (T13/4), Harz
• Besonderheit des Bauteils:
- mit Basisanschluss
• Package: 5 mm Radial (T13/4), Epoxy
• Feature of the device:
- with base connection
- hohe Fotoempfindlichkeit
- high photosensitivity
Anwendungen
Applications
• Lichtschranken
• Photointerrupters
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Industrial electronics
• For control and drive circuits
Typ
Type
Bestellnummer
Ordering Code
Fotostrom, Ee= 0.5mW/cm2, λ = 950nm, VCE = 5 V
Photocurrent
Ipce (mA)
SFH 303 FA
Q62702P0958
Q62702P3587
≥ 1.0
≥ 1.6
SFH 303 FA-3/4
2008-06-20
1
SFH 303 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
VCE
IC
– 40 …+ 100
° C
Kollektor-Emitterspannung
Collector-emitter voltage
35
V
Kollektorstrom
Collector current
50
mA
mA
V
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
ICS
100
7
Emitter-Basisspannung
Emitter-base voltage
VEB
Verlustleistung, TA = 25 ° C
Total power dissipation
Ptot
200
375
mW
K/W
Wärmewiderstand
Thermal resistance
RthJA
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2
SFH 303 FA
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
990
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
λ
750 …1120
nm
Spectral range of sensitivity
S = 10% of Smax
Bestrahlungsempfindliche Fläche
Radiant sensitive area
0.11
mm2
A
Abmessung der Chipfläche
Dimensions of chip area
L × B
L × W
0.5 × 0.5
20
mm × mm
Halbwinkel
Half angle
ϕ
Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V
IPCB
4.0
µA
V
CB = 5 V
Kapazität
Capacitance
V
V
V
CE = 0 V, f = 1 MHz, E = 0
CB = 0 V, f = 1 MHz, E = 0
EB = 0 V, f = 1 MHz, E = 0
CCE
CCB
CEB
7.5
14
19
pF
pF
pF
Dunkelstrom
Dark current
ICEO
1 (≤50)
nA
V
CEO = 20 V, E = 0
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
(threefold saturated)
VCEsat
150
mV
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SFH 303 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
-2
-3
-4
Fotostrom
IPCE
1.0 …2.0 1.6 …3.2 ≥ 2.5
mA
Photocurrent
Ee= 0.5mW/cm2, λ = 950nm, VCE = 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
tr, tf
11
13
15
µs
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
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SFH 303 FA
Relative Spectral Sensitivity,
Photocurrent
PCE = f (Ee), VCE = 5 V
Output Characteristics
IC = f (VCE), IB = Parameter
S
rel = f (λ)
I
100
%
90
Srel
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900 nm1100
lambda
Dark Current
Dark Current
Capacitance
C = f (VR), f = 1 MHz, E = 0
ICEO = f (TA), VCE = 20 V, E = 0
ICEO = f (VCE), E = 0
20
10000
nA
10
pF
18
nA
C
1000
16
I CEO
I CEO
14
12
10
100
1
10
1
Ceb
8
6
4
2
0.1
Ccb
0.1
0.01
Cce
0
0.01
1E-03
1E-02
1E-01
1E+00 1E+01 1E+02
-25
0
25
50
75
100
0
5
10
15
20
25
30
35
V
°C
V
V
VCE
TA
Directional Characteristics
rel = f (ϕ)
S
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SFH 303 FA
Maßzeichnung
Package Outlines
Area not flat
25.2 (0.992)
24.2 (0.953)
9.0 (0.354)
5.9 (0.232)
5.5 (0.217)
5.1 (0.201)
4.8 (0.189)
8.2 (0.323)
7.8 (0.307)
1.8 (0.071)
1.2 (0.047)
7.5 (0.295)
0.6 (0.024)
0.4 (0.016)
6.9 (0.272)
B C E
11.5 (0.453)
10.9 (0.429)
GEOY6351
Chip position
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
10 s
C
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
2008-06-20
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SFH 303 FA
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2008-06-20
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