SFH-314 [OSRAM]

Silicon NPN Phototransistor;
SFH-314
型号: SFH-314
厂家: OSRAM GMBH    OSRAM GMBH
描述:

Silicon NPN Phototransistor

文件: 总10页 (文件大小:388K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2016-01-04  
Silicon NPN Phototransistor  
Version 1.3  
SFH 314  
Features:  
Spectral range of sensitivity: (typ) 460 ... 1080 nm  
Package: 5mm Radial (T 1 ¾), Epoxy  
Special: High linearity  
Applications  
Computer-controlled flashes  
Photointerrupters  
Industrial electronics  
For control and drive circuits  
Ordering Information  
Type:  
Photocurrent  
Ordering Code  
IPCE [µA]  
λ = 950 nm, Ee = 0.5 mW/cm2,  
VCE = 5 V  
SFH 314  
≥ 630  
Q62702P1668  
Q62702P3600  
SFH 314-2/3  
1000 ... 3200  
Note:  
Only one bin within one packing unit (variation less than 2:1)  
2016-01-04  
1
Version 1.3  
SFH 314  
Maximum Ratings (TA = 25 °C)  
Parameter  
Symbol  
Top; Tstg  
VCE  
Values  
-40 ... 100  
70  
Unit  
°C  
Operating and storage temperature range  
Collector-emitter voltage  
Collector current  
V
IC  
50  
mA  
mA  
Collector surge current  
(τ < 10 µs)  
ICS  
100  
Emitter-collector voltage  
Total Power dissipation  
Thermal resistance  
VEC  
7
V
Ptot  
200  
375  
2000  
mW  
K / W  
V
RthJA  
VESD  
ESD withstand voltage  
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)  
Characteristics (TA = 25 °C)  
Parameter  
Symbol  
Values  
Unit  
Wavelength of max. sensitivity  
Spectral range of sensitivity  
(typ)  
(typ)  
λS max  
λ10%  
850  
nm  
(typ) 460 nm  
... 1080  
Radiant sensitive area  
Dimensions of chip area  
(typ)  
(typ)  
A
0.55  
mm2  
L x W  
(typ) 1 x 1 mm x  
mm  
Half angle  
(typ)  
(typ)  
ϕ
± 40  
10  
°
Capacitance  
(VCE = 5 V, f = 1 MHz, E = 0)  
CCE  
pF  
Dark current  
(typ (max)) ICE0  
(typ) tr, tf  
3 (≤ 200)  
11  
nA  
µs  
(VCE = 10 V, E = 0)  
Rise and fall time  
(IC = 1 mA, VCC = 5 V, RL = 1 kΩ)  
2016-01-04  
2
Version 1.3  
SFH 314  
Grouping (TA = 25 °C, λ = 950 nm)  
Group  
Min Photocurrent Max Photocurrent Typ Photocurrent Rise and fall time  
Ee = 0.5 mW/cm2, Ee = 0.5 mW/cm2, EV = 1000 lx, Std. IC = 1 mA, VCC = 5  
VCE = 5 V  
IPCE, min [µA]  
630  
VCE = 5 V  
IPCE, max [µA]  
1250  
Light A, VCE = 5 V V, RL = 1 kΩ  
IPCE [µA]  
3400  
tr, tf [µs]  
-1  
-2  
-3  
-4  
8
1000  
2000  
5400  
10  
12  
14  
1600  
3200  
8600  
2500  
13500  
Group  
Collector-emitter saturation voltage  
IC = IPCEmin x 0.3, Ee = 0.5 mW/cm2  
VCEsat [mV]  
150  
-1  
-2  
-3  
-4  
150  
150  
150  
Note.:  
IPCEmin is the min. photocurrent of the specified group.  
2016-01-04  
3
Version 1.3  
SFH 314  
Relative Spectral Sensitivity 1) page 9  
Srel = f(λ)  
Photocurrent 1) page 9  
IPCE = f(Ee), VCE = 5 V  
OHF02339  
10 1  
mA  
OHF02332  
100  
%
Ι PCE  
Srel  
80  
70  
60  
50  
40  
30  
20  
10  
0
10 0  
10 -1  
10 -2  
10 -3  
10 -3  
10 -2  
mW/cm2  
10 0  
400 500 600 700 800 900 nm 1100  
Ee  
λ
Photocurrent 1) page 9  
IPCE = f(VCE), Ee = Parameter  
Photocurrent 1) page 9  
IPCE / IPCE(25°C) = f(TA), VCE = 5 V  
OHF01524  
OHF02338  
10 1  
mA  
1.6  
Ι PCE  
Ι PCE25  
mW  
cm 2  
Ι PCE  
1
1.4  
mW  
cm 2  
0.5  
1.2  
1.0  
0.8  
0.6  
0.4  
mW  
cm 2  
0.25  
10 0  
mW  
cm 2  
0.1  
0.2  
0
10 -1  
0
10  
20  
30  
40  
50  
V
70  
-25  
0
25  
50  
75 C 100  
VCE  
TA  
2016-01-04  
4
Version 1.3  
SFH 314  
Dark Current 1) page 9  
ICEO = f(VCE), E = 0  
Dark Current 1) page 9  
ICEO = f(TA), E = 0  
OHF02341  
OHF02342  
10 2  
nA  
Ι CEO  
10 3  
nA  
Ι CEO  
10 1  
10 2  
10 0  
10 1  
10 -1  
10 0  
10 -1  
10 -2  
0
20  
40  
60  
80 ˚C 100  
0
10  
20  
30  
40  
50  
V
70  
TA  
VCE  
Collector-Emitter Capacitance 1) page 9  
CCE = f(VCE), f = 1 MHz, E = 0  
Power Consumption  
Ptot = f(TA)  
OHF02340  
OHF02344  
250  
20  
pF  
mW  
Ptot  
C CE  
200  
150  
100  
50  
15  
10  
5
0
0
10 -2  
10 -1  
10 0  
10 1  
V
10 2  
0
20  
40  
60  
80 ˚C 100  
VCE  
TA  
2016-01-04  
5
Version 1.3  
SFH 314  
Directional Characteristics 1) page 9  
Srel = f(ϕ)  
40  
30  
20  
10  
0
OHF02329  
1.0  
50  
0.8  
0.6  
0.4  
60  
70  
0.2  
0
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Package Outline  
Area not flat  
6.9 (0.272)  
6.1 (0.240)  
5.7 (0.224)  
0.6 (0.024)  
0.4 (0.016)  
5.9 (0.232)  
5.5 (0.217)  
5.5 (0.217)  
1.8 (0.071)  
4.0 (0.157)  
3.4 (0.134)  
0.6 (0.024)  
0.4 (0.016)  
1.2 (0.047)  
29.5 (1.161)  
27.5 (1.083)  
Cathode (Diode)  
Collector (Transistor)  
Chip position  
GEXY6630  
Dimensions in mm (inch).  
Package  
5mm Radial (T 1 ¾), Epoxy  
2016-01-04  
6
Version 1.3  
SFH 314  
Approximate Weight:  
0.3 g  
Note  
Packing information is available on the internet (online product catalog).  
Recommended Solder Pad  
Dimensions in mm.  
Note:  
pad 1: emitter  
2016-01-04  
7
Version 1.3  
SFH 314  
TTW Soldering  
IEC-61760-1 TTW  
OHA04645  
300  
˚C  
10 s max., max. contact time 5 s per wave  
T
Continuous line: typical process  
Dotted line: process limits  
250  
235 ˚C - 260 ˚C  
First wave  
Second wave  
T < 150 K  
200  
150  
100  
50  
Cooling  
Preheating  
ca. 3.5 K/s typical  
ca. 2 K/s  
130 ˚C  
120 ˚C  
100 ˚C  
ca. 5 K/s  
Typical  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220 s 240  
t
Disclaimer  
Language english will prevail in case of any discrepancies or deviations between the two language wordings.  
Attention please!  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances.  
For information on the types in question please contact our Sales Organization.  
If printed or downloaded, please find the latest version in the Internet.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any  
costs incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose!  
Critical components* may only be used in life-support devices** or systems with the express written approval of  
OSRAM OS.  
*) A critical component is a component used in a life-support device or system whose failure can reasonably be  
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that  
device or system.  
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or  
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be  
endangered.  
2016-01-04  
8
Version 1.3  
SFH 314  
Glossary  
1)  
Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or  
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily  
correspond to the actual parameters of each single product, which could differ from the typical data and calculated  
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data  
will be changed without any further notice.  
2016-01-04  
9
Version 1.3  
SFH 314  
Published by OSRAM Opto Semiconductors GmbH  
Leibnizstraße 4, D-93055 Regensburg  
www.osram-os.com © All Rights Reserved.  
2016-01-04  
10  

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