Q65110A2465 [OSRAM]

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung; IR- Lumineszenzdiode （ 850纳米），麻省理工学院达赫Ausgangsleistung


型号：	Q65110A2465
厂家：	OSRAM GMBH
描述：	IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung IR- Lumineszenzdiode （ 850纳米），麻省理工学院达赫Ausgangsleistung
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中文：	中文翻译
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IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

High Power Infrared Emitter (850 nm)

Lead (Pb) Free Product - RoHS Compliant

SFH 4250

Features

Wesentliche Merkmale

• High Power Infrared LED

• High forward current allowed at high

temperature

• Infrarot LED mit sehr hoher Ausgangsleistung

• Hohe Bestromung bei hohen Temperaturen

möglich

• Short switching times

• Kurze Schaltzeiten

Applications

Anwendungen

• Infrared Illumination for CMOS cameras

• IR Data Transmission

• Optical sensors

• Infrarotbeleuchtung für CMOS Kameras

• IR-Datenübertragung

• Sensorik

Safety Advices

Sicherheitshinweise

Depending on the mode of operation, these

devices emit highly concentrated non visible

infrared light which can be hazardous to the

human eye. Products which incorporate these

devices have to follow the safety precautions

given in IEC 60825-1 and IEC 62471.

Je nach Betriebsart emittieren diese Bauteile

hochkonzentrierte, nicht sichtbare Infrarot-

Strahlung, die gefährlich für das menschliche

Auge sein kann. Produkte, die diese Bauteile

enthalten, müssen gemäß den Sicherheits-

richtlinien der IEC-Normen 60825-1 und 62471

behandelt werden.

Typ

Type

Bestellnummer

Ordering Code

Strahlstärkegruppierung¹⁾(I_F= 100 mA, t_p= 20 ms)

Radiant Intensity Grouping¹⁾

I_e(mW/sr)

SFH 4250

Q65110A2465

≥ 10 (typ. 15)

¹⁾gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr

2009-05-14

SFH 4250

Grenzwerte (T_A= 25 °C)

Maximum Ratings

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Betriebs- und Lagertemperatur

T_op, T_stg

– 40 … + 100

°C

Operating and storage temperature range

Sperrspannung

Reverse voltage

V_R

Vorwärtsgleichstrom

Forward current

I_F

100

1.5

180

300

Stoßstrom, t_p= 100 μs, D = 0

Surge current

I_FSM

P_tot

Verlustleistung

Power dissipation

K/W

Wärmewiderstand Sperrschicht - Umgebung bei R_thJA

Montage auf FR4 Platine, Padgröße je 16 mm²

Thermal resistance junction - ambient mounted

on PC-board (FR4), padsize 16 mm²each

Wärmewiderstand Sperrschicht - Lötstelle bei

Montage auf Metall-Block

R_thJS

140

K/W

Thermal resistance junction - soldering point,

mounted on metal block

Kennwerte (T_A= 25 °C)

Characteristics

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

I_F= 100 mA

λ_peak

λ_centroid

Δλ

860

850

Centroid-Wellenlänge der Strahlung

Centroid wavelength

I_F= 100 mA

Spektrale Bandbreite bei 50% von I_max

Spectral bandwidth at 50% of I_max

I_F= 100 mA

Abstrahlwinkel

Half angle

± 60

Grad

deg.

Aktive Chipfläche

Active chip area

0.09

mm²

2009-05-14

SFH 4250

Kennwerte (T_A= 25 °C)

Characteristics (cont’d)

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Abmessungen der aktiven Chipfläche

Dimension of the active chip area

L × B

L × W

0.3 × 0.3

mm²

Schaltzeiten, I_evon 10% auf 90% und von 90% t_r, t_f

auf 10%, bei I_F= 100 mA, R_L= 50 Ω

Switching times, Ι_efrom 10% to 90% and from

90% to 10%, I_F= 100 mA, R_L= 50 Ω

Durchlassspannung

Forward voltage

I_F= 100 mA, t_p= 20 ms

I_F= 1 A, t_p= 100 µs

V_F

1.5 (< 1.8)

2.4 (< 3.0)

Sperrstrom

Reverse current

I_R

not designed for μA

reverse

operation

Gesamtstrahlungsfluss

Total radiant flux

I_F= 100 mA, t_p= 20 ms

Φ_{e typ}

TC_I

Temperaturkoeffizient von I_ebzw. Φ_e,

I_F= 100 mA

– 0.5

%/K

Temperature coefficient of I_eor Φ_e, I_F= 100 mA

Temperaturkoeffizient von V_F, I_F= 100 mA

Temperature coefficient of V_F, I_F= 100 mA

TC_V

TC_λ

– 0.7

+ 0.3

mV/K

nm/K

Temperaturkoeffizient von λ, I_F= 100 mA

Temperature coefficient of λ, I_F= 100 mA

2009-05-14

SFH 4250

Strahlstärke I_ein Achsrichtung¹⁾

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity I_ein Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Parameter

Symbol

Werte

Values

Einheit

Unit

SFH 4250-R

SFH 4250-S

Strahlstärke

Radiant intensity

I_F= 100 mA, t_p= 20 ms

I_{e min}

I_{e max}

mW/sr

Strahlstärke

I_{e typ}

100

140

mW/sr

Radiant intensity

I_F= 1 A, t_p= 100 μs

¹⁾Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /

Only one group in one packing unit (variation lower 2:1)

Abstrahlcharakteristik

Radiation Characteristics I_rel= f (ϕ)

OHL01660

40˚

30˚

20˚

10˚

0˚

1.0

50˚

0.8

0.6

0.4

0.2

60˚

70˚

80˚

90˚

100˚

1.0

0.8

0.6

0.4

0˚

20˚

40˚

60˚

80˚

100˚

120˚

2009-05-14

SFH 4250

I_e

= f (I_F)

Relative Spectral Emission

I_rel= f (λ)

Radiant Intensity

Max. Permissible Forward Current

I_e100 mA

I_F= f (T_A), R_thJA= 300 K/W

OHL01716

Single pulse, t_p= 20 μs

120

OHF04135

OHL01715

10¹

100

I_e

I_rel

100

I_F

I_{e (100 mA)}

10⁰

10^-1

10^-2

10^-3

˚C 120

10⁰

10¹

10²

10³

I_F

700

750

800

850

nm 950

T_A

Forward Current I_F= f (V_F)

Single pulse, t_p= 20 μs

Permissible Pulse Handling

Capability I_F= f (τ), T_A= 25 °C,

duty cycle D = parameter

OHF02505

1.6

t_P

OHL01713

10⁰

t_P

I_F

⁼T

1.4

I_F

1.2

1.0

0.8

0.6

0.4

0.2

10^-1

0.005

0.01

0.02

0.033

0.05

0.1

10^-2

0.2

0.5

10^-3

10^-4

0.5

1.5

2.5 V 3

V_F

10^-510^-410^-310^-210^-110⁰10¹s 10²

t_p

2009-05-14

SFH 4250

Maßzeichnung

Package Outlines

2.1 (0.083)

1.7 (0.067)

3.0 (0.118)

2.6 (0.102)

2.3 (0.091)

0.9 (0.035)

0.7 (0.028)

2.1 (0.083)

0.1 (0.004) (typ.)

0.8 (0.031)

0.6 (0.024)

0.4 (0.016)

Package marking

0.18 (0.007)

0.12 (0.005)

GPLY6084

Maße in mm (inch) / Dimensions in mm (inch).

Gehäuse / Package

Power TOPLED^®, klarer Verguss / Power TOPLED^®, clear resin

Anschlussbelegung

Pin configuration

Kathode: abgeschrägte Ecke

Cathode: beveled edge

2009-05-14

SFH 4250

Empfohlenes Lötpaddesign

Reflow Löten

Recommended Solder Pad Design

Reflow Soldering

Padgeometrie für

verbesserte Wärmeableitung

3.3 (0.130)

Paddesign for

improved heat dissipation

2.3 (0.091)

0.8 (0.031)

0.7 (0.028)

Cu Fläche / 16 mm per pad

Cu-area

Lötstoplack

Solder resist

OHFP3021

Empfohlenes Lötpaddesign

Recommended Solder Pad Design

Wellenlöten TTW

TTW Soldering

6.1 (0.240)

2.8 (0.110)

0.5 (0.020)

Cu Fläche / > 16 mm²per pad

Cu-area

Padgeometrie für

verbesserte Wärmeableitung

Paddesign for

improved heat dissipation

Lötstoplack

Solder resist

OHPY3040

2009-05-14

SFH 4250

Lötbedingungen

Vorbehandlung nach JEDEC Level 2

Soldering Conditions

Reflow Lötprofil für bleifreies Löten

Reflow Soldering Profile for lead free soldering

Preconditioning acc. to JEDEC Level 2

(nach J-STD-020C)

(acc. to J-STD-020C)

OHLA0687

300

Maximum Solder Profile

Recommended Solder Profile

Minimum Solder Profile

˚C

+0 ˚C

-5 ˚C

260 ˚C

245 ˚C

235 ˚C

255 ˚C

240 ˚C

250

±5 ˚C

+5 ˚C

-0 ˚C

217 ˚C

10 s min

200

150

100

30 s max

Ramp Down

6 K/s (max)

100 s max

120 s max

Ramp Up

3 K/s (max)

25 ˚C

100

150

200

250

300

Wellenlöten (TTW)

TTW Soldering

(nach CECC 00802)

(acc. to CECC 00802)

OHLY0598

300

10 s

Normalkurve

standard curve

250

200

150

100

235 C ... 260 C

Grenzkurven

limit curves

2. Welle

2. wave

1. Welle

1. wave

ca 200 K/s

2 K/s

5 K/s

100 C ... 130 C

Zwangskühlung

forced cooling

2 K/s

100

150

200

250

2009-05-14

SFH 4250

Published by

OSRAM Opto Semiconductors GmbH

Leibnizstraße 4, D-93055 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components ¹, may only be used in life-support devices or systems ²with the express written approval of OSRAM OS.

¹A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

²Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2009-05-14

Mouser Electronics

Q65110A2465 [OSRAM]

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