Q65110A2487 [OSRAM]

NPN-Silizium-Fototransistor im SMT SIDELED®-Gehause Silicon NPN Phototransistor in SMT SIDELED®-Package;
Q65110A2487
型号: Q65110A2487
厂家: OSRAM GMBH    OSRAM GMBH
描述:

NPN-Silizium-Fototransistor im SMT SIDELED®-Gehause Silicon NPN Phototransistor in SMT SIDELED®-Package

静态存储器 光电
文件: 总10页 (文件大小:203K)
中文:  中文翻译
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NPN-Silizium-Fototransistor im SMT SIDELED®-Gehäuse  
Silicon NPN Phototransistor in SMT SIDELED®-Package  
Lead (Pb) Free Product - RoHS Compliant  
SFH 325  
SFH 325 FA  
SFH 325  
SFH 325 FA  
gemäß OS-PCN-2012-008-A/ according to OS-PCN-2012-008-A  
Wesentliche Merkmale  
Features  
• Speziell geeignet für Anwendungen im Bereich  
von 450 nm bis 1120 nm (SFH 325) und bei  
750 nm bis 1120 nm (SFH 325 FA)  
• Hohe Linearität  
• Especially suitable for applications from  
450 nm to 1120 nm (SFH 325) and from  
750 nm to 1120 nm (SFH 325 FA)  
• High linearity  
• P-LCC-2 Gehäuse  
• P-LCC-2 package  
• Gruppiert lieferbar  
• Available in groups  
Anwendungen  
Applications  
• Miniaturlichtschranken für Gleich- und  
Wechsellichtbetrieb  
• Miniature photointerrupters  
• Industrial electronics  
• Industrieelektronik  
• For control and drive circuits  
• „Messen/Steuern/Regeln“  
Typ  
Bestellnummer  
Fotostrom , (Ee=0,1mW/cm2,=950nm VCE = 5 V)  
Type  
Ordering Code  
Photocurrent  
Ipce (A)  
SFH 3251)  
Q65110A2486  
Q65110A2488  
Q65110A2491  
Q65110A2484  
Q65110A2487  
Q65110A2482  
> 16  
SFH 325-31)  
25-50  
25-80  
40-80  
> 16  
SFH 325-3/-41)  
SFH 325-41)  
SFH 325 FA1)  
SFH 325 FA-31)  
SFH 325 FA-3/-41) Q65110A2490  
SFH 325 FA-41)  
Q65110A2485  
25-50  
25-80  
40-80  
1)  
Gruppierung erfolgt in Halbgruppen (siehe Seite 4), Verpackungseinheit = nur eine Halbgruppe / binning in half  
groups (see page 4), packing unit = only one half group  
2013-01-16  
1
SFH 325, SFH 325 FA  
Grenzwerte   
Maximum Ratings  
Bezeichnung  
Symbol  
Wert  
Einheit  
Parameter  
Symbol  
Value  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
– 40 … + 100  
C  
Operating and storage temperature range  
Kollektor-Emitterspannung  
VCE  
35  
V
Collector-emitter voltage  
Kollektorstrom  
Collector current  
IC  
15  
mA  
mA  
mW  
K/W  
Kollektorspitzenstrom, 10s  
Collector surge current  
ICS  
75  
Verlustleistung, TA = 25 C  
Total power dissipation  
Ptot  
165  
450  
Wärmewiderstand für Montage auf PC-Board  
RthJA  
Thermal resistance for mounting on pcb  
2013-01-16  
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SFH 325, SFH 325 FA  
Kennwerte (TA = 25 C, = 950 nm)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
SFH 325  
SFH 325 FA  
980  
Wellenlänge der max. Fotoempfindlichkeit  
Wavelength of max. sensitivity  
S max  
980  
nm  
Spektraler Bereich der Fotoempfindlichkeit  
S = 10% von Smax  
450 … 1120 750 … 1120 nm  
Spectral range of sensitivity  
S = 10% of Smax  
Bestrahlungsempfindliche Fläche220m)  
0.038  
0.038  
mm2  
A
Radiant sensitive area  
Abmessung der Chipfläche  
Dimensions of chip area  
L B  
L W  
0.45 0.45 0.45 0.45 mm mm  
Halbwinkel  
60  
60  
Grad  
Half angle  
deg.  
Kapazität, VCE = 0 V, f = 1 MHz, E = 0   
Capacitance  
CCE  
ICEO  
5.0  
5.0  
pF  
nA  
Dunkelstrom  
Dark current  
1 (50)  
1 (50)  
VCE = 20 V, E = 0  
2013-01-16  
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SFH 325, SFH 325 FA  
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern  
gekennzeichnet.  
The phototransistors are grouped according to their spectral sensitivity and distinguished by  
arabian figures.  
Bezeichnung  
Symbol  
Wert  
Einheit  
Parameter  
Symbol  
Value  
Unit  
-2A  
-2B  
-3A  
-3B  
-4A  
-4B  
Fotostrom, 950 nm  
Photocurrent  
IPCE min  
16  
25  
20  
32  
25  
40  
32  
50  
40  
63  
50 A  
80 A  
Ee = 0.1 mW/cm2, VCE = 5 V  
SFH 325:  
IPCE max  
Ev = 1000 Ix,   
IPCE  
360  
450  
570  
720  
900 1140 A  
Normlicht/standard light A,  
VCE = 5 V  
Anstiegszeit/Abfallzeit  
Rise and fall time  
tr, tf  
6
6
7
7
8
8
s  
IC = 1 mA, VCC = 5 V, RL = 1 k  
Kollektor-Emitter-SättigungsspannungVCEsat  
Collector-emitter saturation voltage  
IC = IPCEmin1) 0.3,   
150  
150  
150  
150  
150  
150 mV  
Ee = 0.1 mW/cm2  
1)  
I
PCEmin ist der minimale Fotostrom der jeweiligen Gruppe.  
PCEmin is the min. photocurrent of the specified group.  
1)  
I
Directional Characteristics Srel = f ()  
40  
30  
20  
10  
0
OHF01402  
ϕ
1.0  
50  
0.8  
0.6  
0.4  
60  
70  
0.2  
0
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
2013-01-16  
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SFH 325, SFH 325 FA  
Relative Spectral Sensitivity,  
SFH 325 Srel = f ()  
Relative Spectral Sensitivity,  
SFH 325 FA Srel = f ()  
Photocurrent  
I
PCE = f (Ee), VCE = 5 V  
OHF01924  
10 3  
OHF00468  
OHF00207  
100  
100  
μ
A
%
Ι PCE  
Srel  
Srel  
%
80  
70  
60  
50  
40  
30  
20  
10  
80  
10 2  
10 1  
10 0  
10 -1  
4
60  
40  
3
2
20  
0
0
10 -3  
10 -2  
mW/cm 2  
10 0  
400 500 600 700 800 900 nm 1100  
400 500 600 700 800 900 nm 1100  
Ee  
λ
λ
Total Power Dissipation  
Photocurrent  
Dark Current  
P
tot = f (TA)  
I
PCE = f (VCE), Ee = Parameter  
I
CEO = f (VCE), E = 0  
OHF00871  
OHF01527  
OHF01529  
10 1  
nA  
10 0  
mA  
200  
mW  
1
cm2  
Ι CEO  
Ι PCE  
mW  
Ptot  
mW  
cm2  
160  
0.5  
10 0  
10 -1  
10 -2  
10 -3  
mW  
cm2  
0.25  
120  
80  
10 -1  
mW  
cm2  
0.1  
40  
10 -2  
0
0
0
5
10  
15  
20  
25  
30  
V
35  
0
5
10  
15  
20  
25  
30  
V
35  
20  
40  
60  
80 ˚C 100  
TA  
VCE  
VCE  
Dark Current  
Capacitance  
CE = f (VCE), f = 1 MHz, E = 0  
Photocurrent  
o
I
CEO = f (TA), VCE = 5 V, E = 0  
C
I
PCE/IPCE25 = f (TA), VCE = 5 V  
OHF01524  
OHF01530  
OHF01528  
10 3  
nA  
5.0  
1.6  
Ι PCE  
Ι PCE25  
Ι CEO  
CCE  
pF  
1.4  
1.2  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
10 2  
10 1  
10 0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.5  
0
10 -1  
10 -2  
10 -1  
10 0  
10 1  
V
VCE  
10 2  
-25  
0
25  
50  
75  
C
100  
-25  
0
25  
50  
75  
100  
˚C  
TA  
TA  
2013-01-16  
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SFH 325, SFH 325 FA  
Maßzeichnung  
Package Outlines  
(2.4 (0.094))  
(2.85 (0.112))  
1.1 (0.043)  
0.9 (0.035)  
Emitter  
2.54 (0.100)  
spacing  
Collector  
(1.4 (0.055))  
Collector marking  
(R1)  
4.2 (0.165)  
3.8 (0.150)  
GPLY6068  
Maße in mm (inch) / Dimensions in mm (inch).  
2013-01-16  
6
SFH 325, SFH 325 FA  
Empfohlenes Lötpaddesign  
Recommended Solderpad Design  
3.7 (0.146)  
1.2 (0.047)  
Padgeometrie  
für verbesserte  
Wärmeableitung  
Paddesign  
for improved  
heat dissipation  
Cu-Fläche > 16 mm2  
Cu-area > 16 mm 2  
Lötstopplack  
Solder resist  
OHLPY965  
Maße in mm (inch) / Dimensions in mm (inch).  
2013-01-16  
7
SFH 325, SFH 325 FA  
Lötbedingungen  
Vorbehandlung nach JEDEC Level 2  
Soldering Conditions  
Reflow Lötprofil für bleifreies Löten  
Reflow Soldering Profile for lead free soldering  
Preconditioning acc. to JEDEC Level 2  
(nach J-STD-020D.01)  
(acc. to J-STD-020D.01)  
OHA04525  
300  
˚C  
T
250  
T
245 ˚C  
p
240 ˚C  
tP  
tL  
217 ˚C  
200  
150  
tS  
100  
50  
25 ˚C  
0
0
50  
100  
150  
200  
250  
s
300  
t
Bleifreier Aufbau / Pb-Free Assembly (SnAgCu)  
Profileigenschaften  
Profile Feature  
Empfehlung / Recommendation  
Grenzwerte / Max. Ratings  
Aufheizrate zum Vorwärmen*) /  
2 K / s  
3 K / s  
Ramp-up rate to preheat*)  
25 °C to 150 °C  
150 °C to 200 °C  
Zeit ts von TSmin bis TSmax /  
Time ts from TSmin to TSmax  
100 s  
min. 60 s max. 120 s  
3 K / s  
Aufheizrate zur Spitzentemperatur*) /   
2 K / s  
Ramp-up rate to peak*)  
180 °C to TP  
Liquidustemperatur TL /  
217 °C  
Liquidus temperature TL  
Zeit tL über TL / Time tL above TL  
80 s  
max. 100 s  
Spitzentemperatur TP / Peak temperature TP  
245 °C  
20 s  
max. 250 °C  
Verweilzeit tP innerhalb des spezifizierten  
min. 10 s max. 30 s  
Spitzentemperaturbereichs TP - 5 K / Time tP within the  
specified peak temperature range TP - 5 K  
Abkühlrate*) / Ramp-down rate*)  
TP to 100 °C  
3 K / s  
4 K / s maximum  
max. 8 min.  
Zeitspanne von 25 °C bis zur Spitzentemperatur /   
Time from 25 °C to peak temperature  
Alle Temperaturen beziehen sich auf die Bauteilmitte, jeweils auf der Bauteiloberseite gemessen / All temperatures refer to the center of  
the package, measured on the top of the package  
* Steigungsberechnung T/t: t max. 5 s; erfüllt über den gesamten Temperaturbereich / slope calculation T/t: t max. 5 s; fulfillment  
for the whole T-range  
2013-01-16  
8
SFH 325, SFH 325 FA  
Wellenlöten (TTW)  
TTW Soldering  
(nach CECC 00802)  
(acc. to CECC 00802)  
OHLY0598  
300  
C
10 s  
Normalkurve  
standard curve  
250  
200  
150  
100  
50  
T
235 C ... 260 C  
Grenzkurven  
limit curves  
2. Welle  
2. wave  
1. Welle  
1. wave  
ca 200 K/s  
2 K/s  
5 K/s  
100 C ... 130 C  
Zwangskühlung  
forced cooling  
2 K/s  
0
0
50  
100  
150  
200  
s
250  
t
2013-01-16  
9
SFH 325, SFH 325 FA  
Published by   
OSRAM Opto Semiconductors GmbH  
Wernerwerkstrasse 2, D-93049 Regensburg  
www.osram-os.com  
© All Rights Reserved.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances. For information on the types in question please contact our Sales Organization.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs  
incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical  
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.  
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected  
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain  
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
2013-01-16  
10  

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