SZESD8472MUT5G [ONSEMI]
超低电容射频 ESD 防护;型号: | SZESD8472MUT5G |
厂家: | ONSEMI |
描述: | 超低电容射频 ESD 防护 局域网 射频 二极管 瞬态抑制器 |
文件: | 总4页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD8472MUT5G
Ultra-Low Capacitance RF
ESD Protection
Micro−Packaged Diodes for ESD Protection
The ESD8472MUT5G is designed to protect voltage sensitive
components that require ultra-low capacitance from ESD and transient
voltage events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
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MARKING
DIAGRAM
Features
PIN 1
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: 0.2 pF
• Insertion Loss: 0.030 dBm
X3DFN2
CASE 152AF
4 M
• 0201DNS Package: 0.60 mm x 0.30 mm
• Stand−off Voltage: 5.3 V
4
= Specific Device Code
M = Date Code
• Low Leakage: < 1 nA
• Low Dynamic Resistance: < 1 W
• IEC61000−4−2 Level 4 ESD Protection
ORDERING INFORMATION
†
Device
ESD8472MUT5G
Package
Shipping
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
X3DFN2
(Pb−Free)
5000 / Tape &
Reel
Compliant
Typical Applications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
20
Unit
kV
A
IEC 61000−4−2 (ESD) (Note 1)
IEC 61000−4−5 (ESD) (Note 2)
3.0
Total Power Dissipation (Note 3) @ T = 25°C
°P °
300
400
mW
°C/W
A
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
3. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 1
ESD8472/D
ESD8472MUT5G
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V V
R
BR RWM
V
Clamping Voltage @ I
V
C
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Condition
Min
Typ
Max
Unit
V
V
RWM
5.3
V
BR
I = 1 mA (Note 4)
T
7.0
V
Reverse Leakage Current
Clamping Voltage
I
V
= 5.3 V
< 1
11
50
15
20
nA
V
R
RWM
V
I
PP
I
PP
= 1 A (Note 5)
= 3 A (Note 5)
C
C
C
Clamping Voltage
V
V
14
V
ESD Clamping Voltage
Junction Capacitance
Per IEC61000−4−2
See Figures 1 and 2
C
V
R
V
R
= 0 V, f = 1 MHz
= 0 V, f = 1 GHz
0.20
0.15
0.30
0.30
pF
J
Dynamic Resistance
Insertion Loss
R
TLP Pulse
1
W
DYN
f = 1 MHz
f = 8.5 GHz
0.050
0.250
dB
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform.
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
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2
ESD8472MUT5G
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics
Figure 4. CV Characteristics
Figure 5. RF Insertion Loss
Figure 6. Capacitance over Frequency
20
18
16
14
12
10
8
0
−2
−4
−6
−8
−10
−12
−14
−16
6
4
2
0
−18
−20
0
5
10
15
20
25
30
−30
−25
−20
−15
−10
−5
0
VOLTAGE (V)
VOLTAGE (V)
Figure 7. Positive TLP I−V Curve
Figure 8. Negative TLP I−V Curve
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3
ESD8472MUT5G
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE O
NOTES:
PIN 1
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
D
INDICATOR
(OPTIONAL)
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
2X
0.035 C
DIM MIN
MAX
0.33
0.05
0.28
A
A1
b
D
E
0.25
−−−
0.22
E
2X
0.035 C
TOP VIEW
0.62 BSC
0.32 BSC
e
L
0.355 BSC
0.17
0.23
0.05
0.05
C
C
A
RECOMMENDED
2X
MOUNTING FOOTPRINT*
A1
SIDE VIEW
SEATING
PLANE
C
2X
0.30
0.74
1
e
2X b
1
2
2X
0.31
DIMENSIONS: MILLIMETERS
M
0.05
C A B
2X L
See Application Note AND8398/D for more mounting details
M
0.05
C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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Order Literature: http://www.onsemi.com/orderlit
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For additional information, please contact your local
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ESD8472/D
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