SBC817-16L [ONSEMI]
General Purpose Transistors NPN Silicon Collector â Emitter Voltage VCEO 45; 通用晶体管NPN硅集电极的????发射极电压VCEO 45
| 型号： | SBC817-16L |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors NPN Silicon Collector â Emitter Voltage VCEO 45 |
| 文件： | 总13页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
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• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
COLLECTOR
3
ESD Rating − Machine Model: >400 V
• AEC−Q101 Qualified and PPAP Capable
1
• S Prefix for Automotive and Other Applications Requiring Unique
BASE
Site and Control Change Requirements
2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
EMITTER
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
Vdc
1
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
65
45
30
2
SOT−23
CASE 318
STYLE 6
Collector−Base Voltage
V
V
Vdc
Vdc
CBO
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
80
50
30
MARKING DIAGRAM
Emitter−Base Voltage
EBO
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
6.0
6.0
5.0
XX M G
G
Collector Current − Continuous
I
C
100
mAdc
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
XX = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
225
mW
(Note 1)
T = 25°C
Derate above 25°C
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
1.8
mW/°C
°C/W
Thermal Resistance,
R
556
q
JA
Junction−to−Ambient (Note 1)
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
R
417
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 11
BC846ALT1/D
BC846ALT1G Series, SBC846ALT1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A, B, SBC846A, B
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
(I = 10 mA)
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
C
Collector−Emitter Breakdown Voltage BC846A, B
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
BC847A, B, C BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
C
EB
Collector−Base Breakdown Voltage BC846A, B, SBC846A, B
V
V
80
50
30
−
−
−
−
−
−
(I = 10 mA)
C
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
Emitter−Base Breakdown Voltage
BC846A, B, SBC846A, B
6.0
6.0
5.0
−
−
−
−
−
−
(I = 1.0 mA)
E
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A, SBC846A
h
FE
−
−
−
90
150
270
−
−
−
−
(I = 10 mA, V = 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B
C
CE
BC847C, BC848C, SBC847C
(I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A
110
200
180
290
220
450
C
CE
BC846B, BC847B, BC848B,
BC849B, BC850B, SBC846B, SBC848B
BC847C, BC848C, BC849C, BC850C, SBC847C
420
520
800
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
−
4.5
pF
dB
CB
obo
Noise Figure (I = 0.2 mA,
NF
C
V
= 5.0 Vdc, R = 2.0 kW,
BC846A,B, BC847A,B,C, BC848A,B,C,
SBC846A, B, SBC847C, SBC848B
BC849B,C, BC850B,C
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
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2
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
200
0.18
150°C
I /I = 20
C
B
V
CE
= 1 V
150°C
−55°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25°C
25°C
−55°C
100
0
0.02
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
1.1
1.0
0.9
−55°C
V
CE
= 5 V
I /I = 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 7. Capacitances
Figure 8. Current−Gain − Bandwidth Product
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BC846ALT1G Series, SBC846ALT1G Series
BC846B, SBC846B
600
500
400
0.30
I /I = 20
V
CE
= 1 V
C
B
150°C
150°C
25°C
0.25
0.20
0.15
25°C
300
200
−55°C
0.10
0.05
0
−55°C
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
0.8
0.7
0.6
0.5
0.4
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
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5
BC846ALT1G Series, SBC846ALT1G Series
BC846B, SBC846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
2.2
2.6
3.0
q
for V
BE
VB
-55°C to 125°C
I
=
C
10 mA
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 13. Collector Saturation Region
Figure 14. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
T = 25°C
500
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
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BC846ALT1G Series, SBC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
600
500
400
300
200
0.30
I /I = 20
V
CE
= 1 V
C
B
150°C
0.25
0.20
0.15
0.10
150°C
−55°C
25°C
25°C
−55°C
100
0
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
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BC846ALT1G Series, SBC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 21. Collector Saturation Region
Figure 22. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 23. Capacitances
Figure 24. Current−Gain − Bandwidth Product
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BC846ALT1G Series, SBC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
1000
900
0.30
150°C
I /I = 20
C
B
V
CE
= 1 V
0.25
0.20
0.15
0.10
800
150°C
700
600
500
400
300
200
25°C
25°C
−55°C
−55°C
0.05
0
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
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BC846ALT1G Series, SBC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 29. Collector Saturation Region
Figure 30. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
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BC846ALT1G Series, SBC846ALT1G Series
1
1
100 mS 10 mS
1 S
100 mS 10 mS
1 mS
1 S
1 mS
0.1
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
CE
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
1
100 mS 10 mS
1 mS
0.1
1 S
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
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BC846ALT1G Series, SBC846ALT1G Series
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC846ALT1G
SOT−23
1A
3,000 / Tape & Reel
10,000 / Tape & Reel
(Pb−Free)
SBC846ALT1G
BC846ALT3G
SOT−23
(Pb−Free)
1A
1B
BC846BLT1G
SBC846BLT1G
BC846BLT3G
SBC846BLT3G
BC847ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
1B
1E
SOT−23
(Pb−Free)
3,000 / Tape & Reel
10,000 / Tape & Reel
BC847ALT3G
SOT−23
(Pb−Free)
BC847BLT1G
SBC847BLT1G
BC847BLT3G
SOT−23
1F
1F
3,000 / Tape & Reel
10,000 / Tape & Reel
(Pb−Free)
SOT−23
(Pb−Free)
BC847CLT1G
SBC847CLT1G
BC847CLT3G
SOT−23
1G
3,000 / Tape & Reel
(Pb−Free)
SOT−23
(Pb−Free)
1G
1J
10,000 / Tape & Reel
3,000 / Tape & Reel
BC848ALT1G
SOT−23
(Pb−Free)
BC848BLT1G
SBC848BLT1G
BC848BLT3G
SOT−23
1K
1K
3,000 / Tape & Reel
(Pb−Free)
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
BC848CLT1G
BC848CLT3G
BC849BLT1G
BC849BLT3G
BC849CLT1G
BC849CLT3G
BC850BLT1G
BC850CLT1G
SOT−23
(Pb−Free)
1L
2B
2C
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
2F
3,000 / Tape & Reel
SOT−23
(Pb−Free)
2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
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12
BC846ALT1G Series, SBC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 6:
A1
PIN 1. BASE
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BC846ALT1/D
相关型号：
SBC817-25LT3
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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