SBC817-16LT3G [GOOD-ARK]
Small Signal Bipolar Transistor,;
| 型号： | SBC817-16LT3G |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总9页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBC817-16/25/40
NPN General Purpose Transistors
FEATURES
l High Current
l Low Voltage
l General Purpose Switching and Amplification
Package: SOT-23
MAXIMUM RATINGS
3
COLLECTOR
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
45
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
1
BASE
50
V
2
5.0
V
EMITTER
Collector Current — Continuous
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
556
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted )
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
V (BR)CEO
45
50
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
V (BR)CES
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
V (BR)EBO
I CBO
5.0
Collector Cutoff Current
(VCB = 20 V)
—
—
—
—
100
5.0
nA
(VCB = 20 V, TA = 150°C)
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/9
SBC817-16/25/40
NPN General Purpose Transistors
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
h FE
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
SBC817–16
100
—250
(I C= 100 mA, V CE = 1.0 V)
SBC817–25
SBC817–40
160
250
40
—400
—600
—
(I C = 500 mA, V CE = 1.0 V)
—
Collector–Emitter Saturation
V CE(sat)
—
—
—
0.7
V
V
Voltage (I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
V BE(on)
—
1.2
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
1
—
0—
MHz
p F
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance (V CB
10 V, f = 1.0 MHz)
=
C obo
MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
SBC817-16LT1G
SBC817-16LT3G
SBC817-25LT1G
SBC817-25LT3G
SBC817-40LT1G
SBC817-40LT3G
6A
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
6A
6B
6B
6C
6C
2/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS CURVES− SBC817−16LT1G
300
1
I /I = 10
C
B
V
CE
= 1 V
150°C
25°C
200
150°C
25°C
−55°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
−55°C
CE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
3/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS CURVES − SBC817−16LT1G
1.0
0.8
0.6
0.4
+1
0
T = 25°C
J
q
for V
CE(sat)
VC
-1
-2
I = 10 mA
C
100 mA 300 mA
500 mA
q
VB
for V
BE
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 5. Saturation Region
Figure 6. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitances
4/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS CURVES−SBC817-25LT1G
500
400
300
200
1
I /I = 10
C
B
V
= 1 V
CE
150°C
150°C
25°C
25°C
0.1
−55°C
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−55°C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
150°C
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
= 1 V
CE
T
A
= 25°C
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
5/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS CURVES −SBC817-25LT1G
1.0
0.8
0.6
0.4
+1
0
T = 25°C
J
q
for V
CE(sat)
VC
-1
-2
I = 10 mA
C
100 mA 300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 13. Saturation Region
Figure 14. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Capacitances
6/9
SBC817-16/25/40
NPN General Purpose Transistors
SBC817-40LT1G
TYPICAL CHARACTERISTICS CURVES−
700
1
I /I = 10
C
B
150°C
V
CE
= 1 V
600
500
400
300
200
150°C
25°C
0.1
25°C
−55°C
−55°C
0.01
100
0
0.001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−55°C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
−55°C
25°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T
A
= 25°C
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
7/9
SBC817-16/25/40
NPN General Purpose Transistors
−SBC817-40LT1G
TYPICAL CHARACTERISTICS CURVES
1.0
+1
T = 25°C
J
0.8
0.6
q
for V
CE(sat)
VC
0
-1
-2
I = 10 mA
C
100 mA 300 mA
500 mA
0.4
q
for V
BE
VB
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 21. Saturation Region
Figure 22. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 23. Capacitances
TYPICAL CHARACTERISTICS −SBC817-16LT1G/ SBC817-25LT1G /SBC817-40LT1G
1
1 ms
10 ms
100 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse Test @ T = 25°C
A
0.001
0.01
0.1
1
10
100
V
(Vdc)
CE
Figure 24. Safe Operating Area
8/9
SBC817-16/25/40
NPN General Purpose Transistors
PRODUCT OUTLINE DIMENSION:
SOT-23
NOTES:
A
L
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MOUNTING PAD
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
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Doc.USSBC8170-16-25-40x2.0
相关型号：
SBC817-25LT3
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
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