SBC817-16LT3G [ONSEMI]
NPN 双极晶体管;
| 型号： | SBC817-16LT3G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总10页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
http://onsemi.com
NPN Silicon
COLLECTOR
3
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
45
Unit
V
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
V
CEO
V
CBO
V
EBO
3
50
V
5.0
V
1
2
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
500
mAdc
C
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance,
R
556
°C/W
q
JA
Junction−to−Ambient
Total Device Dissipation
P
D
6x M G
Alumina Substrate, (Note 2)
G
T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
1
Thermal Resistance,
R
417
°C/W
q
JA
6x = Device Code
x = A, B, or C
Junction−to−Ambient
Junction and Storage Temperature
T , T
−55 to +150
°C
M
= Date Code*
J
stg
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 − Rev. 11
BC817−16LT1/D
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
45
50
−
−
−
−
−
−
V
V
V
(BR)CEO
(I = 10 mA)
C
Collector−Emitter Breakdown Voltage
V
(BR)CES
(BR)EBO
(V = 0, I = 10 mA)
EB
C
Emitter−Base Breakdown Voltage
V
5.0
(I = 1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = 20 V)
−
−
−
−
100
5.0
nA
mA
CB
(V = 20 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mA, V = 1.0 V)
BC817−16
BC817−25
BC817−40
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I = 500 mA, V = 1.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mA, I = 50 mA)
V
−
−
0.7
V
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = 500 mA, V = 1.0 V)
V
BE(on)
−
−
1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
−
10
obo
(V = 10 V, f = 1.0 MHz)
CB
ORDERING INFORMATION
Device
†
Specific Marking
Package
Shipping
BC817−16LT1G
SOT−23
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
(Pb−Free)
6A
SOT−23
(Pb−Free)
BC817−16LT3G
BC817−25LT1G
BC817−25LT3G
BC817−40LT1G
BC817−40LT3G
SOT−23
(Pb−Free)
6B
6C
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1
300
200
1
I /I = 10
C
B
V
CE
= 1 V
150°C
25°C
150°C
25°C
−55°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1
1.0
0.8
0.6
0.4
+1
T = 25°C
J
q
for V
CE(sat)
VC
0
-1
-2
I
C
= 10 mA
100 mA 300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 5. Saturation Region
Figure 6. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitances
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4
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−25LT1
500
400
300
200
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
25°C
0.1
−55°C
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−55°C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
150°C
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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5
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−25LT1
1.0
0.8
0.6
0.4
+1
T = 25°C
J
q
for V
CE(sat)
VC
0
-1
-2
I
C
= 10 mA
100 mA 300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 13. Saturation Region
Figure 14. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Capacitances
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6
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−40LT1
700
600
1
I /I = 10
C
B
150°C
V
CE
= 1 V
150°C
500
400
300
200
25°C
0.1
25°C
−55°C
−55°C
0.01
100
0
0.001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−55°C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
−55°C
25°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
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7
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−40LT1
1.0
0.8
0.6
0.4
+1
T = 25°C
J
q
for V
CE(sat)
VC
0
-1
-2
I
C
= 10 mA
100 mA 300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 21. Saturation Region
Figure 22. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 23. Capacitances
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8
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1
1
1 ms
10 ms
100 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse Test @ T = 25°C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 24. Safe Operating Area
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9
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
L1
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BC817−16LT1/D
相关型号：
SBC817-25LT3
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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