PCFFS30120AF [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, Die;
| 型号： | PCFFS30120AF |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, Die |
| 文件： | 总7页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
30 A, 1200 V, D1, Die
Anode
PCFFS30120AF
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature dependent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operation frequency, increased power density, reduced EMI, and
reduced system size and cost.
DIE LAYOUT
(Dimension: mm, Except Scribe Lane)
Features
Max Junction Temperature 175C
Avalanche Rated 361 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Passivation Information
Applications
Passivation Material: Polymide (PSPI)
Passivation Type: Local Passivation
Passivation Thickness: 90KA
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
Die Information
Wafer Diameter: 6 inch
CROSS SECTION
Die Size: 3,700 3,700 mm (include Scribe Lane)
Metallization:
Top Ti/TiN/AlCu 4 mm
Back Ti/NiV/Ag
Die Thickness: Typ. 200 mm
Bonding Pad Size
Anode 3,120 3,120 mm
Recommended Wire Bond (Note 1)
Anode: 20 mil 3
NOTE:
1. Based on TO−247 package of onsemi.
ORDERING INFORMATION
Part Number
Die Size
Package
3,700 x 3,700 mm
(Include Scribe Lane)
N/A
PCFFS30120AF
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2023 − Rev. 3
PCFFS30120AF/D
PCFFS30120AF
ELECTRICAL CHARACTERISTICS ON WAFER (T = 25C unless otherwise noted) (Note 2)
C
Symbol
Parameter
Reverse Blocking Voltage
Forward Voltage
Test Condition
I = 200 mA, T = 25C
R
Min
1200
1.20
−
Typ
−
Max
−
Unit
V
V
R
C
V
F
I = 30 A, T = 25C
−
1.75
200
V
F
C
I
R
Reverse Current
V
R
= 1200 V, T = 25C
−
mA
C
2. Tested 100% on wafer.
The Configuration of Chips (Based on 6, Wafer)
Chip
Chip
Scribe Lane
Chip
80 mm
PSPI Passivation Line
Chip
Figure 1. Saw-on-film Frame Packing Based on Tested Wafer
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2
PCFFS30120AF
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
Symbol
Parameter
FFSH30120A
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
1200
361
E
AS
Single Pulse Avalanche Energy (Note 3)
Continuous Rectified Forward Current @ T < 155C
mJ
A
I
F
30
C
Continuous Rectified Forward Current @ T < 135C
46
C
I
Non-Repetitive Peak Forward Surge Current
1500
1400
230
A
A
T
T
= 25C, 10 ms
= 150C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
80
A
F,RM
p
Ptot
T
= 25C
500
W
C
C
T
= 150C
83
W
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
C
Ncm
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. E of 361 mJ is based on starting T = 25C, L = 0.5 mH, I = 38 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.3
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 30 A, T = 25C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 30 A, T = 125C
−
F
C
I = 30 A, T = 175C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25C
−
mA
C
= 1200 V, T = 125C
−
−
C
= 1200 V, T = 175C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
175
1740
159
130
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
PCFFS30120AF
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
10−4
10−5
30
25
20
15
10
5
T
J = −55oC
TJ = 25 o
J = 75 o
C
o
= 175 C
T
J
T
C
TJ = 175 o
TJ = 125 o
C
o
10−6
10−7
10−8
10−9
J
T
= 125 C
o
= 75 C
T
J
C
o
T
= 25 C
J
o
= −55 C
T
J
0
0.0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
800 1000 1200
VR, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 2. Forward Characteristics
Figure 3. Reverse Characteristics
400
300
200
100
0
600
500
400
300
200
100
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
Figure 4. Current Derating
Figure 5. Power Derating
200
160
120
80
10000
1000
100
40
0
10
0
200
400
600
800
0.1
1
10
100
800
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitive Charge vs. Reverse Voltage
Figure 7. Capacitive vs. Reverse Voltage
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4
PCFFS30120AF
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
60
50
40
30
20
10
0
0
200
400
600
800
VR, REVERSE VOLTAGE (V)
Figure 8. Capacitance Stored Energy
2
DUTY CYCLE−DESCENDING ORDER
1
10−1
10−2
10−3
10−4
P
DM
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t
1
t
2
(t) = r(t) x R
Z
qJC
qJC
o
R
= 0.3 C/W
qJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
J
DM
C
qJC
SINGLE PULSE
10−6 10−5
1
2
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 9. Junction−to−Case Transient Thermal Response Curve
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5
PCFFS30120AF
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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6
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