PCFFS3065AF [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, Die;
| 型号： | PCFFS3065AF |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, Die |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
30 A, 650 V, D1, Die
Anode
PCFFS3065AF
Description
Die Information
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature dependent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operation frequency, increased power density, reduced EMI, and
reduced system size and cost.
• Wafer Diameter: 6 inch
• Die Size: 2,700 × 2,700 mm
(include Scribe Lane)
• Metallization:
♦ Top: Ti/TiN/AICu 4 mm
♦ Back: Ti/NiV/Ag
• Die Thickness: Typ. 200 mm
• Bonding Pad Size:
Features
♦ Anode: 2,100 × 2,100 mm
• Recommended Wire Bond*
♦ Anode: 15mil × 2
• Max Junction Temperature 175°C
• Avalanche Rated 180 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
*Based on TO−220 package of onsemi
• No Reverse Recovery/No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
For Additional Product Information
and Electrical Characteristics on Package
Refer to FFSP3065A product datasheet.
ELECTRICAL CHARACTERISTICS ON WAFER (T = 25°C unless otherwise noted) (Note 1)
C
Symbol
Parameter
Reverse Blocking Voltage
Forward Voltage
Test Conditions
Min
650
1.20
−
Typ
−
Max
−
Unit
V
I
= 200 mA, T = 25°C
V
R
R
C
V
F
I = 30 A, T = 25°C
−
1.75
200
V
F
C
mA
I
R
Reverse Current
V
= 650 V, T = 25°C
−
R
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Tested 100% on wafer
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 3
PCFFS3065AF/D
PCFFS3065AF
Die Layout
Cross Selection
(Dimension: mm, except Scribe Lane)
Passivation Information
− Passivation Material: Polymide (PSPI)
− Passivation Type: Local Passivation
− Passivation Thickness: 90KA
The Configuration of Chips
(Based on 6 inch Wafer)
chip
chip
PSPI Passivation Line
Scribe Lane
80.0 mm
chip
chip
Sawn−on−film frame packing based on tested wafer
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2
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