PCFG75T120SQF [ONSEMI]
超场截止 IGBT 1200V 75A 裸片;
| 型号： | PCFG75T120SQF |
| 厂家： | 
ONSEMI |
| 描述： | 超场截止 IGBT 1200V 75A 裸片 双极性晶体管 |
| 文件： | 总4页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
PCFG75T120SQF
IGBT Die
Trench Ultra Field Stop IGBT Die optimized for UPS and Solar
applications.
Features
• Extremely Efficient Trench with Field Stop Technology
www.onsemi.com
• Low V
Loss Reduces System Power Dissipation
CE(sat)
• Optimized for High Speed Switching
Typical Applications
• Solar Inverters
• UPS Systems
VCE = 1200 V
IC = Limited by TJ(max)
MAXIMUM RATINGS
Parameter
IGBT DIE
Symbol
Value
1200
Unit
V
C
Collector−Emitter Voltage, T = 25°C
V
CE
J
DC Collector Current, limited by max T
Pulsed Collector Current (Note 2)
Gate−Emitter Voltage
I
(Note 1)
300
A
J(max)
C
I
A
C, pulse
V
GE
20
V
G
Maximum Junction Temperature
T
J
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
E
1. Depending on thermal properties of assembly.
2. T
limited by T , 10 mSec pulse V = 15 V.
jmax GE
pulse
DIE OUTLINE
MECHANICAL DATA
Parameter
Die Size
Value
6200 x 6200
See die layout
405 x 660
112
Unit
2
mm
2
Emitter Pad Size
Gate Pad Size
Die Thickness
mm
2
mm
mm
2
Wafer Size
150
mm
Top Pad Metal
Back Metal
5 mm AlCu
2 mm AlTiNiAg
Passivation
1.5 mm HR NIT
310
Max possible chips per wafer
Reject Ink dot size
25 mils
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28°C,
30−65% RH
Type: Sawn wafer on tape.
Storage time: <3 months
ORDERING INFORMATION
Device
Inking?
Yes
Shipping
PCFG75T120SQF
Sawn Wafer on Tape
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
PCFG75T120SQF/D
August, 2018 − Rev. 0
PCFG75T120SQF
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Parameter
STATIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector−Emitter Cutoff Current
Gate Leakage Current
Test Conditions
Symbol
Min
Typ
Max
Units
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
1.7
5.5
−
−
V
V
GE
C
V
= 15 V, I = 40 A
V
1.95
6.5
GE
C
CE(sat)
GE(TH)
V
= V , I = 400 mA
V
4.5
−
V
GE
CE
C
V
GE
= 0 V, V = 1200 V
I
400
200
mA
nA
CE
CES
V
=
20 V, V = 0 V
I
−
−
GE
CE
GES
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
−
−
−
9060
242
137
399
74
−
−
−
−
−
−
pF
nC
ies
V
= 20 V, V = 0 V,
f = 1 MHz
CE
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Charge Total
C
res
Q
g
V
CE
= 600 V, V = 15 V,
GE
Gate−Emitter Charge
Q
Q
ge
gc
I
C
= 75 A
Gate−Collector Charge
192
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
E = Emitter Pad
G = Gate Pad
All dimensions in mm
www.onsemi.com
2
PCFG75T120SQF
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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PCFG75T120SQF/D
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