PCFF75H120SWF [ONSEMI]
Power Diode Bare Die;
| 型号： | PCFF75H120SWF |
| 厂家： | 
ONSEMI |
| 描述： | Power Diode Bare Die |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Diode – Power, Bare Die
VR = 1200 V
IF = 75 A
Gen VII, Fast Recovery
1200 V, 75 A
DIODE DIE
A
PCFF75H120SWF
Features
• Advanced Gen VII Technology
• Fast and Soft Recovery
C
• Maximum Junction Temperature 175°C
• Low Forward Voltage: V = 1.78 V (Typ.) @ I = 75 A
F
F
• Easy to Parallel Operation
DIE OUTLINE
Typical Applications
• Solar
• Energy Storage
• Industrial Motor Control
MECHANICAL PARAMETERS
Parameter
Value
Unit
2
Die Size (w/ Scribe Lane)
Anode Pad Size
Scribe Lane Width
Die Thickness
3,900 x 7,000
2,917 x 6,017
80
mm
2
mm
mm
mm
119
Top Metal
6 mm AlSiCu
Back Metal
1.65 mm Ti/NiV/Ag
ORDERING INFORMATION
Topside Passivation
Wafer Diameter
Silicon Nitride plus Polyimide
Device
Inking
Shipping
200 mm
910
Sawn Wafer
on Tape
Max Possible Die Per
Wafer
Yes
PCFF75H120SWF
Recommended Storage
Environment
In original container, in dry nitrogen,
< 6 months at an ambient temperature of 23°C
Publication Order Number:
PCFF75H120SWF−DIE/D
© Semiconductor Components Industries, LLC, 2015
1
March 2023 − Rev. P0
PCFF75H120SWF
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Ratings
1200
Unit
V
Repetitive Peak Reverse Voltage
DC Forward Current, limited by T
V
RRM
(Note 1)
I
F
75
A
J max
Pulsed Forward Current, tp limited by T
Operating Junction Temperature
Storage Temperature Range
(Note 2)
I
225
A
J max
FM
T
−40 to +175
+18 to +28
°C
°C
J
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nominal forward current at Tc = 100°C when assembled in power module
2. Not subject to production test – verified by design/characterization.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS (Tested on Wafers)
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
V
I
= 1 mA
1200
−
−
−
V
mA
V
BR
R
I
V
= 1200 V
−
−
10
R
R
V
I = 75 A
F
1.78
2.08
F
ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization)
Breakdown Voltage
V
I
= 1 mA
T = −40°C
1200
−
−
−
−
−
−
−
−
−
V
V
BR
R
J
Forward Voltage
V
I = 75 A
F
T = 175°C
J
−
−
−
−
−
−
−
1.9
F
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
I = 75 A, V = 600 V,
281.6
3.5
nS
mC
A
rr
F
R
dI /dt = 500 A/ms, T = 25°C
F
J
Q
rr
RRM
I
24.6
440.2
8.1
T
I = 75 A, V = 600 V,
nS
mC
A
rr
F
R
dI /dt = 500 A/ms, T = 175°C
F
J
Q
rr
RRM
I
37.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Switching characteristics and thermal properties are depending strongly on module design and mounting technology.
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2
PCFF75H120SWF
3,900 mm
2,917 mm
Figure 1. Die Layout
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3
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