NXH160T120L2Q2F2S1G [ONSEMI]
功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A;
| 型号： | NXH160T120L2Q2F2S1G |
| 厂家： | 
ONSEMI |
| 描述： | 功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A 双极性晶体管 |
| 文件： | 总15页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NXH160T120L2Q2F2S1G
Split T-Type NPC Power
Module
1200 V, 160 A IGBT, 650 V, 100 A IGBT
The NXH160T120L2Q2F2S1G is a power module containing a
split T− type neutral point clamped three−level inverter, consisting of
two 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two
Neutral Point 120 A / 650 V rectifiers, two 100 A / 650 V Neutral
Point IGBTs with inverse diodes, two Half Bridge 60 A / 1200 V
rectifiers and a negative temperature coefficient thermistor (NTC).
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Features
• Split T−type Neutral Point Clamped Three−level Inverter Module
• 1200 V IGBT Specifications: V
• 650 V IGBT specifications: V
= 2.15 V, E = 4300 mJ
SW
CE(SAT)
= 1.47 V, E = 2560 mJ
CE(SAT)
SW
• Baseplate
Q2PACK
CASE 180AK
• Solderable Pins
• Thermistor
Typical Applications
MARKING DIAGRAM
• Solar Inverters
• Uninterruptible Power Supplies
NXH160T120L2Q2F2S1G
ATYYWW
1−6
27−32
NXH160T120L2Q2F2S1G = Device Code
YYWW = Year and Work Week Code
A = Assembly Site Code
T = Test Site Code
G = Pb−Free Package
T1
HALF BRIDGE
FREEWHEEL DIODE
D1
HALF BRIDGE
HALF BRIDGE
IGBT
D5
INVERSE DIODE
56
NEUTRAL POINT
D2
INVERSE DIODE
55
D6
44−49
7−10
NEUTRAL POINT
T2
NEUTRAL
FREEWHEEL DIODE
PIN CONNECTIONS
POINT IGBT
52
51
50
33
NEUTRAL
34
35
POINT IGBT
NEUTRAL POINT
FREEWHEEL DIODE
23−26
38−43
T3
D7
T4
NEUTRAL POINT
D8
HALF BRIDGE
HALF BRIDGE
D3
INVERSE DIODE
D4
HALF BRIDGE
INVERSE DIODE
IGBT
FREEWHEEL DIODE
36
37
53
54
NTC
ORDERING INFORMATION
11−16
17−22
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1. NXH160T120L2Q2F2S1G Schematic Diagram
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
NXH160T120L2Q2F2S1/D
May, 2019 − Rev. 0
NXH160T120L2Q2F2S1G
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
Symbol
Value
Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C ( T = 175°C)
I
C
181
543
500
5
A
h
J
Pulsed Collector Current (T = 175°C)
I
A
J
Cpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
ms
°C
°C
h
J
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T ≤ 150°C
T
sc
GE
CE
J
Minimum Operating Junction Temperature
T
−40
150
JMIN
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
T
JMAX
Collector−Emitter Voltage
V
650
20
V
V
CES
Gate−Emitter Voltage
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
116
348
232
5
A
h
J
C
Pulsed Collector Current (T = 175°C)
I
A
J
Cpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
ms
°C
°C
h
J
Short Circuit Withstand Time @ V = 15 V, V = 400 V, T ≤ 150°C
T
sc
GE
CE
J
Minimum Operating Junction Temperature
T
−40
150
JMIN
Maximum Operating Junction Temperature
HALF BRIDGE FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
T
JMAX
V
1200
56
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
)
)
)
)
I
FRM
150
142
−40
150
A
J
p
Jmax
Jmax
Jmax
Jmax
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
°C
°C
h
J
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
HALF BRIDGE INVERSE DIODE
Peak Repetitive Reverse Voltage
T
JMAX
V
RRM
1200
19
V
A
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
I
FRM
50
A
J
p
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
63
W
°C
°C
h
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
NEUTRAL POINT FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
T
JMAX
V
RRM
650
132
300
198
−40
150
V
A
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
I
FRM
A
J
p
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
°C
°C
h
J
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
NEUTRAL POINT INVERSE DIODE
Peak Repetitive Reverse Voltage
T
JMAX
V
RRM
650
38
V
A
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
I
FRM
110
79
A
J
p
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
°C
h
J
Minimum Operating Junction Temperature
T
JMIN
−40
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2
NXH160T120L2Q2F2S1G
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
NEUTRAL POINT INVERSE DIODE
Symbol
Value
150
Unit
°C
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60Hz
Creepage distance
T
−40 to 125
°C
stg
V
3000
12.7
V
RMS
is
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
−25)
jmax
Unit
Module Operating Junction Temperature
T
−40
(T
°C
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 1200 V
I
CES
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.15
2.08
5.53
−
500
2.7
–
mA
GE
CE
V
= 15 V, I = 160 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
= 15 V, I = 160 A, T = 150°C
C J
GE
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 6 mA
6.4
500
–
V
GE
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
105
50
J
d(on)
V
V
= 350 V, I = 100 A
CE
C
Rise Time
t
–
r
= 15 V, R = 4 W
G
GE
Turn−off Delay Time
t
270
55
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
1700
2600
95
–
mJ
–
T = 125°C
t
–
ns
J
d(on)
V
V
= 350 V, I = 100 A
CE
C
Rise Time
t
55
–
r
= 15 V, R = 4 W
G
GE
Turn−off Delay Time
t
285
150
2300
4600
38800
800
680
1600
0.19
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
mJ
–
V
= 25 V. V = 0 V. f = 10 kHz
C
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 600 V, I = 160 A, V = 15 V
Q
g
–
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
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3
NXH160T120L2Q2F2S1G
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS
Test Conditions
Symbol
Min
Typ
Max
Unit
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 650 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
−
100
1.5
–
mA
R
R
I
= 120 A, T = 25°C
V
1.24
1.20
50
V
F
J
F
I
= 120 A, T = 150°C
J
F
Reverse Recovery Time
T = 25°C
= 350 V, I = 100 A
= 15 V, R = 4 W
G
t
–
ns
nC
A
J
rr
V
CE
C
Reverse Recovery Charge
Q
1700
59
–
rr
V
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
RRM
di/dt
2500
380
77
–
A/ms
mJ
E
–
rr
Reverse Recovery Time
T = 125°C
t
–
ns
J
rr
V
= 350 V, I = 100 A
= 15 V, R = 4 W
CE
C
Reverse Recovery Charge
Q
rr
RRM
3600
77
–
nC
A
V
GE
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
di/dt
1900
780
0.48
–
A/ms
mJ
E
–
rr
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
V
= 0 V, V = 650 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
−
1.47
1.50
5.30
−
300
1.8
–
mA
GE
CE
CES
Collector−Emitter Saturation Voltage
V
= 15 V, I = 100 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
= 15 V, I = 100 A, T = 150°C
C J
GE
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 1.2 mA
6.4
300
–
V
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
t
50
J
d(on)
V
= 350 V, I = 100 A
CE
C
Rise Time
t
35
–
r
V
= 15 V, R = 4 W
GE
G
Turn−off Delay Time
t
135
40
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
E
870
1690
50
–
mJ
on
off
–
T = 125°C
t
–
ns
J
d(on)
V
= 350 V, I = 100 A
CE
C
Rise Time
t
37
–
r
V
= 15 V, R = 4 W
G
GE
Turn−off Delay Time
t
145
65
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
1300
2500
18800
560
500
790
0.41
–
mJ
on
off
E
–
V
= 25 V, V = 0 V, f = 10 kHz
C
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 480 V, I = 80 A, V = 15 V
Q
g
–
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
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NXH160T120L2Q2F2S1G
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS
Test Conditions
Symbol
Min
Typ
Max
Unit
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
3.3
–
mA
R
R
I
= 60 A, T = 25°C
V
2.63
2.12
320
V
F
J
F
I
= 60 A, T = 150°C
J
F
Reverse Recovery Time
T = 25°C
= 350 V, I = 100 A
= 15 V, R = 4 W
G
t
–
ns
nC
A
J
rr
V
CE
C
Reverse Recovery Charge
Q
3700
68
–
rr
V
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
RRM
di/dt
3000
1150
520
–
A/ms
mJ
E
–
rr
Reverse Recovery Time
T = 125°C
= 350 V, I = 100 A
= 15 V, R = 4 W
t
–
ns
J
rr
V
CE
C
Reverse Recovery Charge
Q
rr
RRM
9000
102
–
nC
A
V
GE
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
di/dt
2600
2750
0.67
–
A/ms
mJ
E
–
rr
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
HALF BRIDGE INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
I
= 7 A, T = 25°C
V
F
–
−
–
1.92
1.37
1.52
2.80
−
V
F
J
I
= 7 A, T = 150°C
J
F
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
NEUTRAL POINT INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
I
= 30 A, T = 25°C
V
F
–
−
–
2.72
1.91
1.21
3.2
−
V
F
J
I
= 30 A, T = 150°C
J
F
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
−
−
22
1486
−
−
−
5
−
−
−
−
kW
W
25
T = 100°C
R
100
DR/R
−5
−
%
Power dissipation
Power dissipation constant
B−value
P
200
2
mW
mW/K
K
D
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
3950
3998
B−value
−
K
ORDERING INFORMATION
Device
Marking
NXH160T120L2Q2F2S1G
Package
Shipping
NXH160T120L2Q2F2S1G
Q2PACK − Case 180AK
(Pb−Free and Halide−Free)
12 Units / Blister Tray
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode
350
300
250
200
150
100
350
17 V to 11 V
17 V to 11 V
10 V
9 V
10 V
9 V
300
250
200
150
100
T = 150°C
J
T = 25°C
J
8 V
7 V
8 V
7 V
50
0
50
0
0
0
0
1
2
3
4
5
0
0
0
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. IGBT Typical Output Characteristics
Figure 2. IGBT Typical Output Characteristics
200
150
100
300
270
240
210
180
150
120
90
T = 150°C
J
50
0
T = 25°C
J
60
T = 150°C
J
30
0
T = 25°C
J
2
4
6
8
10
12
0.5
1.0
1.5
2.0
2.5
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 3. IGBT Typical Transfer
Characteristics
Figure 4. Diode Forward Characteristic
4000
3500
3000
2500
2000
1500
1000
8000
7000
6000
5000
4000
3000
2000
V
V
R
=
15 V
GE
V
V
R
= 15 V
GE
125°C
= 350 V
= 4 W
125°C
CE
= 350 V
CE
G
= 4 W
G
25°C
25°C
500
0
1000
0
50
100
150
200
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Turn On Loss vs. IC
Figure 6. Typical Turn Off Loss vs. IC
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode
400
350
300
250
200
150
100
140
V
V
R
= 15 V
= 350 V
= 4 W
GE
T
@ 25°C
CE
d(on)
120
100
80
T
@ 125°C
@ 25°C
d(off)
G
T
d(on)
@ 125°C
T
d(off)
t @ 125°C
r
t @ 125°C
f
60
t @ 25°C
r
40
V
V
= 15 V
= 350 V
GE
t @ 25°C
f
20
0
CE
50
0
R
= 4 W
G
0
0
0
50
100
150
200
200
200
0
0
0
50
100
150
200
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 7. Typical Turn Off Time vs. IC
Figure 8. Typical Turn On Time vs. IC
100
90
80
70
60
50
40
30
20
5000
4500
4000
V
V
R
= 15 V
= 350 V
GE
125°C
125°C
25°C
CE
= 4 W
G
3500
3000
2500
2000
1500
1000
25°C
V
V
= 15 V
= 350 V
= 4 W
GE
CE
500
0
10
0
R
G
50
100
150
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. Typical Reverse Recovery Time vs.
IC
Figure 10. Typical Reverse Recovery Charge
vs. IC
100
90
80
70
60
50
40
30
20
4000
3500
3000
2500
2000
1500
1000
125°C
25°C
V
V
R
= 15 V
GE
= 350 V
CE
25°C
= 4 W
G
125°C
V
V
= 15 V
= 350 V
= 4 W
GE
CE
500
0
10
0
R
G
50
100
150
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Typical Reverse Recovery Peak
Current vs. IC
Figure 12. Typical Diode Current Slope vs. IC
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode
1200
1000
800
16
V
V
R
= 15 V
= 350 V
= 4 W
GE
V
I
= 600 V
= 160 A
CE
14
12
10
8
125°C
25°C
CE
C
G
600
6
400
4
200
0
2
0
0
50
100
150
200
0
500
1000
1500
2000
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 13. Typical Reverse Recovery Energy
vs. IC
Figure 14. Gate Voltage vs. Gate Charge
10
1
DUT = 50%
30%
0.1
10%
0.01
0.001
5%
2%
1%
0.0001
0.00001
Single Pulse
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 15. IGBT Transient Thermal Impedance
10
1
DUT = 50%
30%
0.1
10%
5%
2%
1%
0.01
0.001
0.0001
Single Pulse
0.00001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 16. Diode Transient Thermal Impedance
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8
NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode
300
250
200
150
100
150
17 V to 10 V
17 V to 12 V
T = 25°C
J
T = 150°C
J
11 V
120
90
9 V
10 V
9 V
8 V
7 V
60
30
0
50
0
8 V
7 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. IGBT Typical Output Characteristics
Figure 18. IGBT Typical Output Characteristics
200
150
100
150
120
90
60
50
0
30
0
T = 150°C
J
T = 150°C
J
T = 25°C
J
T = 25°C
J
0
2
4
6
8
10
12
0
1
2
3
4
5
6
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 19. IGBT Typical Transfer
Characteristics
Figure 20. Diode Forward Characteristic
2000
1800
1600
1400
1200
1000
800
5000
4500
4000
3500
3000
2500
2000
1500
1000
V
V
R
=
15 V
V
V
R
= 15 V
= 350 V
= 4 W
GE
GE
125°C
125°C
= 350 V
= 4 W
CE
CE
G
G
25°C
25°C
600
400
200
0
500
0
0
50
100
150
200
0
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 21. Typical Turn On Loss vs. IC
Figure 22. Typical Turn Off Loss vs. IC
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode
180
160
140
120
100
80
70
T
@ 125°C
@ 25°C
d(off)
60
50
40
30
20
T
@ 25°C
T
d(on)
d(off)
V
V
R
= 15 V
= 350 V
= 4 W
GE
CE
T
@ 125°C
d(on)
t @ 125°C
f
G
t @ 125°C
r
60
t @ 25°C
t @ 25°C
r
f
40
V
V
R
= 15 V
= 350 V
= 4 W
GE
10
0
CE
20
0
G
0
0
0
50
100
150
200
0
0
0
50
100
150
200
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 23. Typical Turn Off Time vs. IC
Figure 24. Typical Turn On Time vs. IC
800
700
600
500
400
300
200
14,000
12,000
V
V
R
= 15 V
= 350 V
V
V
R
= 15 V
= 350 V
GE
GE
125°C
25°C
125°C
25°C
CE
CE
= 4 W
= 4 W
G
G
10,000
8000
6000
4000
2000
0
100
0
50
100
150
200
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 25. Typical Reverse Recovery Time vs.
IC
Figure 26. Typical Reverse Recovery Charge
vs. IC
140
120
100
80
4000
3500
3000
2500
2000
V
V
= 15 V
GE
125°C
25°C
= 350 V
CE
25°C
R
= 4 W
G
125°C
60
40
V
V
= 15 V
= 350 V
= 4 W
GE
1500
1000
20
0
CE
R
G
50
100
150
200
50
100
150
200
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 27. Typical Reverse Recovery Peak
Current vs. IC
Figure 28. Typical Diode Current Slope vs. IC
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode
4500
4000
3500
3000
2500
2000
1500
1000
16
V
V
R
= 15 V
= 350 V
= 4 W
V
I
= 480 V
= 80 A
GE
CE
14
12
10
8
CE
C
125°C
25°C
G
6
4
2
0
500
0
0
50
100
150
200
0
200
400
600
800
1000
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 29. Typical Reverse Recovery Energy
vs. IC
Figure 30. Gate Voltage vs. Gate Charge
10
1
0.1
DUT = 50%
30%
10%
5%
2%
1%
0.01
0.001
0.0001
Single Pulse
0.00001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 31. IGBT Transient Thermal Impedance
10
1
DUT = 50%
30%
0.1
0.01
10%
5%
2%
1%
0.001
Single Pulse
1.0E−06 1.0E−05
0.0001
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 32. Diode Transient Thermal Impedance
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Half Bridge IGBT Protection Diode
100
150°C
25°C
80
60
40
20
0
0
1
2
3
4
5
6
V , FORWARD VOLTAGE (V)
F
Figure 33. Diode Forward Characteristic
10
1
DUT = 50%
30%
10%
5%
0.1
2%
1%
0.01
0.001
Single Pulse
0.0001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 34. Diode Transient Thermal Impedance
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NXH160T120L2Q2F2S1G
TYPICAL CHARACTERISTICS − Neutral Point IGBT Protection Diode
100
150°C
25°C
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
V , FORWARD VOLTAGE (V)
F
Figure 35. Diode Forward Characteristic
10
1
DUT = 50%
30%
10%
5%
2%
1%
0.1
0.01
0.001
Single Pulse
0.0001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 36. Diode Transient Thermal Impedance
TYPICAL CHARACTERISTICS − Thermistor
24K
20K
16K
12K
8K
4K
0
25
45
65
85
105
125
TEMPERATURE (°C)
Figure 37. Thermistor Characteristics
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM56, 93x47 (SOLDER PIN)
CASE 180AK
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63482G
PIM56 93X47 (SOLDER PIN)
PAGE 1 OF 1
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