NXH240B120H3Q1SG [ONSEMI]
电源集成模块 (PIM) 3 沟道，1200 V IGBT + SiC 升压，80 A IGBT 和 20 A SiC 二极管;
| 型号： | NXH240B120H3Q1SG |
| 厂家： | 
ONSEMI |
| 描述： | 电源集成模块 (PIM) 3 沟道，1200 V IGBT + SiC 升压，80 A IGBT 和 20 A SiC 二极管 双极性晶体管 二极管 |
| 文件： | 总15页 (文件大小：1885K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, 3-channel, 1200 V
IGBT + SiC Boost, 80 A IGBT
and 20 A SiC Diode,
Q1 Package
PIM32
(PRESS−FIT)
CASE 180AX
PIM32
(SOLDER−PINS)
CASE 180BQ
NXH240B120H3Q1PG,
NXH240B120H3Q1PG-R,
NXH240B120H3Q1SG
MARKING DIAGRAM
NXH240B120H3Q1xG
ATYYWW
The NXH240B120H3Q1PG is a case power module containing a
three channel BOOST stage. The integrated field stop trench IGBTs
and SiC Diodes provide lower conduction losses and switching losses,
enabling designers to achieve high efficiency and superior reliability.
NXH240B120H3Q1xG = Specific Device Code
x = P or S
G
= Pb−Free Package
AT
= Assembly & Test Site Code
Features
YYWW = Year and Work Week Code
• 1200 V Ultra Field Stop IGBTs
• Low Reverse Recovery and Fast Switching SiC Diodes
• Low Inductive Layout
• Press−fit Pins
PIN ASSIGNMENTS
• Thermistor
Typical Applications
• Solar Inverters
• ESS
21, 22
19, 20
BYS1
BST1
D13
DC+1−2
11, 12
13, 14
T1
D12
D11
G1
16
15 E1
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 12 of this data sheet.
DC−1
17, 18
23, 24
BYS2
D23
25, 26 BST2
T2
D22
NTC1 31
D21
10 G2
NTC2
32
9
E2
DC−2
7, 8
29, 30 BYS3
27, 28 BST3
D33
DC+3
1, 2
T3
D32
D31
G3
4
3 E3
5, 6
DC−3
Figure 1. Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH240B120H3Q1PG/D
March, 2023 − Rev. 2
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
Table 1. MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
IGBT (T1, T2, T3)
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
68
A
h
J
Pulsed Collector Current (T = 175°C)
I
204
158
−40
150
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
PROTECTION DIODE (D11, D21, D31)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
1200
30
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 150°C)
I
F
h
J
Repetitive Peak Forward Current (T = 150°C)
I
120
44
A
J
FRM
Maximum Power Dissipation (T = 150°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
SILICON CARBIDE BOOST DIODE (D12, D22, D32)
Peak Repetitive Reverse Voltage
T
−40
150
JMIN
T
JMAX
V
1200
25
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C)
I
75
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
73
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BYPASS DIODE (D13, D23, D33)
T
JMIN
−40
175
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
42
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 150°C)
I
F
h
J
Repetitive Peak Forward Current (T = 150°C)
I
126
50
A
J
FRM
Maximum Power Dissipation (T = 150°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
−40
150
JMIN
T
JMAX
Storage Temperature range
T
stg
−40 to 150
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
IGBT (T1, T2, T3)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−Emitter Cutoff Current
V
= 0 V, V = 1200 V
I
CES
–
–
–
1.65
1.85
5.87
–
400
2
mA
GE
CE
Collector−Emitter Saturation Voltage
V
= 15 V, I = 80 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 80 A, T = 150°C
–
–
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 1.0 mA
4.50
–
6.50
800
–
V
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
J
t
–
13
d(on)
V
= 800 V, I = 50 A
CE
C
Rise Time
t
–
22
–
r
V
= +15 V, −9 V, R = 4.3 W
G
GE
Turn−off Delay Time
t
–
262
13
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
E
–
1258
1277
32
–
mJ
on
off
–
–
T = 125°C
t
t
–
–
ns
J
d(on)
V
= 800 V, I = 50 A
CE
C
Rise Time
t
–
22
–
r
V
= +15 V, −9 V, R = 4.3 W
G
GE
Turn−off Delay Time
–
315
22
–
d(off)
Fall Time
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
E
–
1306
2221
18151
345
294
817
0.60
0.29
–
mJ
on
off
–
–
V
= 20 V, V = 0 V, f = 10 kHz
C
–
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
= 600 V, I = 25 A, V
=
15 V
Q
g
–
–
nC
C
GE
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
PROTECTION DIODE (D11, D21, D31)
Diode Forward Voltage
Thermal grease,
Thickness = 2 Mil 2%, l = 0.63 W/mK
R
R
–
–
°C/W
°C/W
thJH
thJC
–
–
I
F
= 30 A, T = 25°C
V
F
–
–
–
–
1.09
0.99
1.60
0.98
1.3
–
V
J
I
F
= 30 A, T = 150°C
J
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease,
R
–
°C/W
°C/W
thJH
thJC
Thickness = 2 Mil 2%, l = 0.63 W/mK
R
–
SILICON CARBIDE BOOST DIODE (D12, D22, D32)
Diode Forward Voltage
I
= 20 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
–
1.48
1.99
21
1.75
–
V
F
J
I
F
= 20 A, T = 150°C
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
mC
A
J
V
CE
= 800 V, I = 50 A
C
Reverse Recovery Charge
Q
rr
RRM
84
–
V
= +15 V, −9 V, R = 4.3 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
7
–
di/dt
1750
65
–
A/ms
mJ
E
rr
–
Reverse Recovery Time
T = 125°C
t
rr
22
–
ns
J
V
CE
= 800 V, I = 50 A
C
Reverse Recovery Charge
Q
rr
RRM
89
–
mC
A
V
GE
= +15 V, −9 V, R = 4.3 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
8
–
di/dt
1800
99
–
A/ms
mJ
E
rr
–
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NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SILICON CARBIDE BOOST DIODE (D12, D22, D32)
Thermal Resistance − chip−to−heatsink
Thermal grease,
R
–
–
1.30
0.85
–
–
°C/W
°C/W
thJH
Thickness = 2 Mil 2%, l = 0.63 W/mK
Thermal Resistance − chip−to−case
BYPASS DIODE (D13, D23, D33)
Diode Forward Voltage
R
thJC
I
F
= 50 A, T = 25°C
V
F
–
–
–
–
1.095
1.004
1.40
1.3
–
V
J
I
F
= 50 A, T = 150°C
J
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
THERMISTOR CHARACTERISTICS
Nominal resistance
Thermal grease,
Thickness = 2 Mil 2%, l = 0.63 W/mK
R
–
°C/W
°C/W
thJH
thJC
R
0.85
–
T = 25°C
R
–
–
5
493.3
–
–
–
5
–
–
–
kW
W
25
Nominal resistance
T = 100°C
R
100
Deviation of R25
DR/R
−5
–
%
Power dissipation
P
20
mW
mW/K
K
D
Power dissipation constant
B−value
–
1.4
B(25/50), tolerance 2%
–
3375
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32)
Figure 2. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics
Figure 6. Typical Turn ON Loss vs. IC
Figure 3. Typical Output Characteristics
Figure 5. Diode Forward Characteristics
Figure 7. Typical Turn OFF Loss vs. IC
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5
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32)
Figure 8. Typical Turn ON Loss vs. RG
Figure 10. Typical Reverse Recovery Time vs. IC
Figure 12. Typical Turn−On Switching Time vs. IC
Figure 9. Typical Turn OFF Loss vs. RG
Figure 11. Typical Reverse Recovery Time vs. RG
Figure 13. Typical Turn−Off Switching Time vs. IC
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6
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32)
Figure 14. Typical Turn−On Switching Time vs. RG
Figure 15. Typical Turn−Off Switching Time vs. RG
Figure 17. Typical Reverse Recovery Charge vs. RG
Figure 19. Typical di/dt vs. RG
Figure 16. Typical Reverse Recovery Time vs. RG
Figure 18. Typical Reverse Recovery Peak
Current vs. RG
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7
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32)
Figure 20. Typical Reverse Recovery Time vs. IC
Figure 22. Typical Reverse Recovery Current vs. IC
Figure 24. FBSOA
Figure 21. Typical Reverse Recovery Charge vs. IC
Figure 23. Typical di/dt Current Slope vs. IC
Figure 25. RBSOA
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8
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32)
Figure 26. Transient Thermal Impedance (T1, T2, T3)
Figure 27. Transient Thermal Impedance (D12, D22, D32)
Figure 28. Gate Voltage vs. Gate Charge
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9
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − Diode (D13, D23, D33)
Figure 29. Diode Forward Characteristics
Figure 30. Transient Thermal Impedance
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10
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
TYPICAL CHARACTERISTICS − Diode (D11, D21, D31)
Figure 31. Diode Forward Characteristics
Figure 32. Transient Thermal Impedance
Figure 33. Thermistor Characteristic
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11
NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH240B120H3Q1PG,
NXH240B120H3Q1PG−R
NXH240B120H3Q1PG,
NXH240B120H3Q1PG−R
Q1 BOOST, Case 180AX
Press−fit Pins (Pb−Free)
21 Units / Blister Tray
NXH240B120H3Q1SG
NXH240B120H3Q1SG
Q1 BOOST, Case 180BQ
Solder Pins (Pb−Free)
21 Units / Blister Tray
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12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM30, 71x37.4
CASE 180AD
ISSUE E
DATE 28 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON07115G
PIM30 71X37.4 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM32, 71x37.4 (PRESS−FIT)
CASE 180AX
ISSUE O
DATE 25 JAN 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON02449H
PIM32, 71x37.4 (PRESS−FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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