NXH25C120L2C2SG [ONSEMI]
IGBT Module, CIB 1200 V, 25 A IGBT;
| 型号： | NXH25C120L2C2SG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, CIB 1200 V, 25 A IGBT 双极性晶体管 |
| 文件： | 总10页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMPIM 25 A CIB Module
NXH25C120L2C2SG
The NXH25C120L2C2SG is a transfer−molded power module
containing a converter−inverter−brake circuit consisting of six 25 A,
1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one
25 A, 1200 V brake IGBT with brake diode and an NTC thermistor.
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Features
• Low Thermal Resistance
• 6 mm Clearance Distance between Pin to Heatsink
• Compact 73 mm × 40 mm × 8 mm Package
• Solderable Pins
• Thermistor
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Industrial Motor Drives
• Servo Drives
DIP26 67.8x40
CASE 181AD
DBPLUS
P
MARKING DIAGRAM
GUP
U
GVP
V
GWP
W
R
S
T
B
GB
GUN
GVN
GWN
TH1
TH2
NXH25C120L2C2SG = Specific Device Code
ZZZ
AT
= Assembly Lot Code
= Assembly & Test Location
= Year
DBMINUS
NB
NU
NV
NW
Y
WW
= Work Week
Figure 1. NXH25C120L2C2SG Schematic Diagram
ORDERING INFORMATION
†
Device
NXH25C120L2C2SG
Package
Shipping
DIP26
(Pb−Free)
6 Units /
Tube
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2020 − Rev. 1
NXH25C120L2C2SG/D
NXH25C120L2C2SG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
A
A
CES
V
GE
Continuous Collector Current @ T = 80°C (Tv
= 175°C)
= 175°C)
= 150°C)
I
C
25
C
Jmax
Jmax
Jmax
Pulsed Collector Current
DIODE
I
75
Cpulse
Peak Repetitive Reverse Voltage
V
RRM
1200
25
V
A
A
Continuous Forward Current @ T = 80°C (Tv
I
F
C
Repetitive Peak Forward Current
RECTIFIER DIODE
I
75
FRM
Peak Repetitive Reverse Voltage
V
RRM
1600
25
V
A
A
Continuous Forward Current @ T = 80°C (Tv
I
F
C
Repetitive Peak Forward Current
I
75
FRM
2
2
2
I t value (10 ms single half−sine wave) @ 25°C
(10 ms single half−sine wave) @ 150°C
I t
680
360
A t
Surge current (10 ms sin180°) @ 25°C
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 50 Hz
Internal isolation
IFSM
370
−40 to 125
3000
A
T
stg
°C
V
is
V
RMS
Al O
2
3
Creepage distance
6.0
6.0
mm
mm
Clearance distance
Comperative Tracking Index
CTI
> 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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2
NXH25C120L2C2SG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
1.7
1.9
5.9
–
250
2.4
–
mA
GE
GE
GE
GE
GE
CE
V
V
V
= 15 V, I = 25 A, T = 25°C
CE(sat)
C
J
= 15 V, I = 25 A, T = 150°C
–
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
= V , I = 3.04 mA
4.8
–
6.8
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25 °C
t
–
68
J
d(on)
V
V
= 600 V, I = 25 A
CE
GE
C
t
r
–
63
–
=
15 V, R = 20 W
G
Turn−off Delay Time
Fall Time
t
–
235
48
–
d(off)
t
f
–
–
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
–
2200
720
72
–
on
off
E
–
–
T = 125°C
ns
t
t
–
–
J
d(on)
V
CE
GE
= 600 V, I = 25 A
C
t
–
56
–
r
V
=
15 V, R = 20 W
G
Turn−off Delay Time
Fall Time
–
266
54
–
d(off)
t
–
–
f
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
E
–
3050
1200
6200
212
117
269
–
on
off
–
–
V
= 20 V. V = 0 V
pF
C
–
–
CE
GE
ies
oes
f = 100 kHz
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
V
GE
= 600 V, I = 25 A,
Q
g
–
–
nC
C
= 0 V ~ +15 V
Temperature under switching conditions
Thermal Resistance − chip−to−case
DIODE CHARACTERISTICS
Tvj op
RthJC
−40
150
–
°C
–
0.54
°C/W
Brake Diode Reverse Leakage Current
Diode Forward Voltage
VR = 1200 V
IR
–
–
–
1.9
1.7
1.35
16
200
2.6
–
mA
V
F
V
I = 25 A, T = 25°C
F
J
I = 25 A, T = 150°C
–
F
J
T = 25°C
Reverse Recovery Charge
Q
–
–
mC
A
J
rr
V
V
= 600 V, I = 25 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
I
I
–
–
RRM
=
15 V, R = 20 W
G
E
rr
–
350
3.6
26
–
mJ
mC
A
T = 150 °C
Reverse Recovery Charge
Q
rr
RRM
–
–
J
V
V
= 600 V, I = 25 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
–
–
=
15 V, R = 20 W
G
E
rr
–
1050
–
mJ
°C
Temperature under switching conditions
Thermal Resistance − chip−to−case
Tvj op
RthJC
−40
–
150
–
1.10
°C/W
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3
NXH25C120L2C2SG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
RECTIFIER DIODE CHARACTERISTICS
Rectifier Reverse Leakage Current
Rectifier Forward Voltage
VR = 1600 V
I = 25 A, T = 25°C
IR
–
–
−
1
200
1.5
–
mA
V
F
V
F
J
I = 35 A, T = 150°C
–
1.1
F
J
Temperature under switching conditions
Tvj op
RthJC
−40
150
°C
Thermal Resistance − chip−to−case
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
–
0.86
–
°C/W
T = 25°C
R
–
–
5
493.3
–
–
–
5
–
–
–
–
kW
W
25
T = 100°C
R
100
nR/R
−5
–
%
Power dissipation
P
D
20
mW
mW/K
K
Power dissipation constant
B−value
–
1.4
B(25/50), tolerance 2%
B(25/100), tolerance 2%
–
3375
3433
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NXH25C120L2C2SG
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
75
75
60
45
30
15
0
°
150 C
°
25 C
60
V
GE
= 20 V
45
30
15
0
V
GE
= 20 V
V
GE
= 11 V
V
GE
= 11 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 2. Inverter IGBT Typical Output
Figure 3. Inverter IGBT Typical Output
Characteristic (255C)
Characteristic (1505C)
70
60
50
40
30
20
10
0
75
60
45
30
15
0
°
150 C
°
150 C
°
25 C
°
25 C
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
V
, Gate−Emitter Voltage (V)
V , Forward Voltage (V)
F
GE
Figure 4. Inverter IGBT Typical Transfer
Characteristic
Figure 5. Inverter Diode Typical Forward
Characteristic
3
8
7
6
5
4
3
2
1
0
°
°
V
V
R
= 600 V
= −15 V/15 V
= 20 W
V
V
R
= 600 V
= −15 V/15 V
= 20 W
25 C
25 C
CE
CE
°
°
GE
150 C
GE
150 C
2.5
G
G
2
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
Ic (A)
30
35
40
45
50
Ic (A)
Figure 6. Inverter IGBT Typical Turn On Loss vs IC
Figure 7. Inverter IGBT Typical Turn Off Loss vs IC
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5
NXH25C120L2C2SG
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
6
2
1.8
1.6
1.4
1.2
1
°
°
V
V
R
= 600 V
= −15 V/15 V
= 20 W
V
V
I
= 600 V
= −15 V/15 V
= 25 A
25 C
25 C
CE
CE
°
°
GE
150 C
GE
125 C
5
4
3
2
1
0
G
C
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
If (A)
30
35
40
45
50
0
20
40
60
80
100
Rg (W)
Figure 8. Inverter Diode Typical Reverse
Recovery Energy vs IC
Figure 9. Inverter IGBT Typical Turn On Loss vs RG
1.6
4.5
4
°
°
V
V
I
= 600 V
= −15 V/15 V
= 25 A
V
V
= 600 V
= −15 V/15 V
25 C
25 C
CE
CE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
°
°
GE
125 C
GE
125 C
I = 25 A
C
C
3.5
3
2.5
2
1.5
1.0
0.5
0
0
20
40
60
80
100
0
20
40
60
80
100
Rg (W)
Rg (W)
Figure 10. Inverter IGBT Typical Turn Off Loss vs RG
Figure 11. Inverter Diode Typical Reverse
Recovery Energy vs RG
18
V
V
= 600 V
= 15 V
= 25 A
CE
GE
15
12
9
I
C
6
3
0
0
30
60
90
120
150
180
210
240
270
Charge (nC)
Figure 12. Inverter IGBT Gate Voltage vs Gate Charge
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6
NXH25C120L2C2SG
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
pulse on time [s]
Figure 13. IGBT Junction−to−Case Transient Thermal Impedance
10
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
pulse on time [s]
Figure 14. Diode Junction−to−Case Transient Thermal Impedance
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7
NXH25C120L2C2SG
TYPICAL CHARACTERISTICS − RECTIFIER
50
40
30
20
°
°
150 C
25 C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V , Forward Voltage (V)
F
Figure 15. Rectifier Typical Forward Characteristic
10
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
pulse on time [s]
Figure 16. Rectifier Junction−to−Case Transient Thermal Impedance
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DIP26 67.8x40
CASE 181AD
ISSUE B
DATE 05 AUG 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXX = Specific Device Code
ZZZ = Assembly Lot Code
AT = Assembly & Test Location
Y
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09519H
DIP26 67.8x40
PAGE 1 OF 1
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