NXH100B120H3Q0SG [ONSEMI]
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.;
| 型号： | NXH100B120H3Q0SG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 双极性晶体管 |
| 文件： | 总16页 (文件大小：1501K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Si/SiC Hybrid Modules –
EliteSiC, Dual Boost,
1200 V, 50 A IGBT + 1200 V,
20 A SiC Diode, Q0 Package
Q0BOOST
CASE 180AJ
SOLDER PINS
Q0BOOST
CASE 180BF
PRESS−FIT PINS
NXH100B120H3Q0,
NXH100B120H3Q0PG-R
The NXH100B120H3Q0 is a power module containing a dual boost
stage. The integrated field stop trench IGBTs and SiC Diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
MARKING DIAGRAM
NXH100B120H3Q0xxG
ATYYWW
Features
xx
= P, PT, S or ST
• 1200 V Ultra Field Stop IGBTs
• Low Reverse Recovery and Fast Switching SiC Diodes
• 1600 V Bypass and Anti−parallel Diodes
• Low Inductive Layout
YYWW = Year and Work Week Code
A
T
= Assembly Site Code
= Test Site Code
= Pb−Free Package
G
• Solderable Pins or Press−Fit Pins
• Thermistor
PIN CONNECTIONS
• Options with Pre−Applied Thermal Interface Material (TIM) and
Without Pre−Applied TIM
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Energy Storage Systems
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH100B120H3Q0xG/PG−R Schematic
Diagram
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2023 − Rev. 8
NXH100B120H3Q0/D
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C Unless Otherwise Noted
J
Rating
Symbol
Value
Unit
BOOST IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
C1
C2
Continuous Collector Current @ T
Continuous Collector Current @ T
80°C (T = 175°C)
I
61
A
C <
C <
J
102°C (T = 175°C)
I
50
A
J
Pulsed Collector Current (T = 175°C)
I
150
186
−40
150
A
J
Cpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
°C
°C
C
J
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
BOOST DIODE
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
34
V
A
RRM
Continuous Forward Current @ T
80°C (T = 175°C)
I
C <
C <
J
F1
Continuous Forward Current @ T
132°C (T = 175°C)
I
20
A
J
F2
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
114
185
142
−40
150
W
A
C
J
Surge Forward Current (60 Hz single half−sine wave)
I
FSM
2
2
2
I t − value (60 Hz single half−sine wave)
I t
A s
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BYPASS DIODE / IGBT PROTECTION DIODE
Peak Repetitive Reverse Voltage
T
JMIN
°C
°C
T
JMAX
V
RRM
1600
58
V
A
Continuous Forward Current @ T
Continuous Forward Current @ T
80°C (T = 175°C)
I
F1
C <
C <
J
141°C (T = 175°C)
I
F2
25
A
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
)
I
FRM
75
A
J
p
Jmax
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
91
W
°C
°C
C
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
Storage Temperature range
T
stg
−40 to 125
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
VRMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
TJ
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
4.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
200
2.3
–
mA
GE
GE
GE
GE
GE
CE
V
V
1.77
1.93
5.27
−
V
= 15 V, I = 50 A, T = 25°C
CE(sat)
C
J
= 15 V, I = 50 A, T = 150°C
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
= V , I = 1 mA
6.5
800
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
44
J
d(on)
V
R
= 700 V, I = 50 A V =
15 V,
CE
G
C
GE
Rise Time
t
r
16
–
= 4 W
Turn−off Delay Time
t
203
23
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
700
1500
43
–
–
T = 125°C
t
–
ns
J
d(on)
V
R
= 700 V, I = 50 A V =
15 V,
CE
G
C
GE
Rise Time
t
r
18
–
= 4 W
Turn−off Delay Time
t
233
58
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Input Capacitance
E
on
E
off
800
2600
9075
173
147
409
0.51
0.82
–
–
V
V
= 20 V, V = 0 V, f = 10 kHz
C
–
pF
CE
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
= 600 V, I = 40 A, V = 15 V
Q
g
–
nC
C
GE
Thermal Resistance − chip−to−case
R
R
–
°C/W
°C/W
thJC
thJH
Thermal Resistance −
chip−to−heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
–
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
−
1.44
1.93
15
300
1.8
–
mA
R
R
V
V
I = 20 A, T = 25°C
F
F
J
I = 20 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
–
ns
nC
J
rr
V
R
= 700 V, I = 50 A V
=
=
15 V,
15 V,
CE
C
GE
Reverse Recovery Charge
Q
rr
RRM
108
11
–
= 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
A
di/dt
1500
20
–
A/ms
mJ
E
–
rr
Reverse Recovery Time
T = 125°C
t
16
–
ns
J
rr
V
R
= 700 V, I = 50 A V
CE
C GE
Reverse Recovery Charge
Q
rr
RRM
115
12
nC
= 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
A
di/dt
1400
22
A/ms
mJ
E
rr
Thermal Resistance − chip−to−case
R
0.83
1.15
°C/W
°C/W
thJC
thJH
Thermal Resistance − chip−to−
heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
R
–
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3
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted
J
Parameter
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Test Conditions
Symbol
Min
Typ
Max
Unit
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1600 V, T = 25°C
I
R
–
–
−
100
1.4
−
mA
R
J
V
F
1.0
V
I = 25 A, T = 25°C
F
J
I = 25 A, T = 150°C
F
−
–
0.90
1.04
1.41
J
Thermal Resistance − chip−to−case
R
–
°C/W
°C/W
thJC
thJH
Thermal Resistance − chip−to−
heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
R
–
–
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
−
−
22
1486
−
−
−
5
kW
W
25
T = 100°C
R
100
DR/R
−5
−
%
Power dissipation
Power dissipation constant
B−value
P
200
2
−
−
−
−
mW
mW/K
K
D
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
3950
3998
B−value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
24 Units / Blister Tray
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
Q0BOOST − Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins
NXH100B120H3Q0SG
NXH100B120H3Q0PTG
24 Units / Blister Tray
24 Units / Blister Tray
NXH100B120H3Q0SG
NXH100B120H3Q0PTG
Q0BOOST − Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins
Q0BOOST − Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins, Thermal Interface Material (TIM)
NXH100B120H3Q0STG
24 Units / Blister Tray
NXH100B120H3Q0STG
Q0BOOST − Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins, Thermal Interface Material (TIM)
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4
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL CHARACTERISTICS
Boost IGBT & IGBT Protection Diode / Bypass Diode
150
150
120
T = 25°C
J
T = 150°C
J
V = 20 V
GE
V = 20 V
GE
120
90
V = 11 V
GE
V = 11 V
GE
90
60
60
30
0
30
0
0
1
2
3
4
5
0
1
2
3
4
5
V , COLLECTOR−EMITTER VOLTAGE (V)
CE
V , COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 2. IGBT Typical Output Characteristics
Figure 3. IGBT Typical Output Characteristics
80
70
60
50
40
30
20
150
120
90
60
150°C
150°C
25°C
30
0
10
0
25°C
0
2
4
6
8
10
12
0,0
0,5
1,0
1,5
V , GATE−EMITTER VOLTAGE (V)
GE
V , FORWARD VOLTAGE (V)
F
Figure 4. IGBT Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
Figure 7. RBSOA
Figure 6. FBSOA
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5
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL CHARACTERISTICS
Boost IGBT & IGBT Protection Diode / Bypass Diode
Figure 8. Typical Switching Loss Eon vs. IC
Figure 9. Typical Switching Loss Eon vs. RG
Figure 11. Typical Switching Loss Eoff vs. RG
Figure 10. Typical Switching Loss Eoff vs. IC
Figure 13. Typical Switching Time Tdon vs. RG
Figure 12. Typical Switching Time Tdon vs. IC
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6
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 14. Typical Switching Time Tdoff vs. IC
Figure 15. Typical Switching Time Tdoff vs. RG
Figure 16. Typical Switching Time Tron vs. IC
Figure 17. Typical Switching Time Tron vs. RG
Figure 18. Typical Switching Time Tf vs. IC
Figure 19. Typical Switching Time Tf vs RG
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7
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 20. Typical Reverse Recovery Energy vs. IC
Figure 21. Typical Reverse Recovery Energy vs. RG
Figure 22. Typical Reverse Recovery Time vs. IC
Figure 23. Typical Reverse Recovery Time vs. RG
Figure 24. Typical Reverse Recovery Charge vs. IC
Figure 25. Typical Reverse Recovery Charge vs. RG
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8
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 26. Typical Reverse Recovery Current
Figure 27. Typical Reverse Recovery Current
vs. IC
vs. RG
Figure 28. Typical di/dt vs. IC
Figure 29. Typical di/dt vs.RG
16
V
CE
= 600 V
14
12
10
I
V
= 40 A
C
= 15 V
GE
8
6
4
2
0
0
100
200
300
400
500
Qg, Gate Charge (nC)
Figure 30. Gate Voltage vs. Gate Charge
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9
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 31. IGBT Junction−to−Case Transient Thermal Impedance
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10
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS − Boost Diode
Figure 32. Diode Junction−to−Case Transient Thermal Impedance
60
150°C
50
25°C
40
30
20
10
0
0
1
2
3
4
5
V , FORWARD VOLTAGE (V)
F
Figure 33. Diode Forward Characteristic
Figure 34. Diode Junction−to−Case Transient Thermal Impedance
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22 55x32.5 (PRESSFIT PIN)
CASE 180BF
ISSUE O
DATE 21 MAY 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON07824H
PIM22 55x32.5 (PRESSFIT PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
PIM22 55x32.5 (PRESSFIT PIN)
CASE 180BF
ISSUE O
DATE 17 MAY 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
*This information is generic. Please refer to device data
G
= Pb−Free Package
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON07824H
PIM22 55x32.5 (PRESSFIT PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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相关型号：
NXH100B120H3Q0STG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
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