NXH040F120MNF1PTG [ONSEMI]
SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET;
| 型号： | NXH040F120MNF1PTG |
| 厂家： | 
ONSEMI |
| 描述： | SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET |
| 文件： | 总13页 (文件大小：1744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
PACKAGE PICTURE
Silicon Carbide (SiC)
Module – EliteSiC, 40 mohm
SiC M1 MOSFET, 1200 V,
4-PACK Full Bridge
Topology, F1 Package
PIM22 33.8x42.5 (PRESS FIT)
CASE 180BX
Product Preview
NXH040F120MNF1PTG,
NXH040F120MNF1PG
MARKING DIAGRAM
NXH040F120MNF1PTG/PG
ATYYWW
The NXH040F120MNF1 is a power module containing an
40 mW/1200 V SiC MOSFET full bridge and a thermistor in an F1
package.
XXXXX = Specific Device Code
AT = Assembly & Test Site Code
Features
YWW = Year and Work Week Code
• 40 mW/1200 V SiC MOSFET Half−Bridge
• Thermistor
• Options with Pre−Applied Thermal Interface Material (TIM) and
without Pre−Applied TIM
PIN CONNECTIONS
• Press−Fit Pins
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Typical Applications
• Solar Inverter
16
9
10
15
1
2
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power
11
18
20
17
19
3
5
4
6
12
13
14
7
8
22
21
See Pin Function Description for pin names
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH040F120MNF1 Schematic Diagram
This document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. P3
NXH040F120MNF1/D
NXH040F120MNF1PTG, NXH040F120MNF1PG
PIN FUNCTION DESCRIPTION
Pin
1
Name
Phase 1
Phase 1
S2
Description
Center point of M1 and M2
Center point of M1 and M2
M2 Kelvin Emitter (High side switch)
M2 Gate (High side switch)
M4 Kelvin Emitter (High side switch)
M4 Gate (High side switch)
Center point of M3 and M4
Center point of M3 and M4
Thermistor Connection 2
2
3
4
G2
5
S4
6
G4
7
AC2
AC2
TH2
TH1
DC−
DC−
DC−
DC−
DC+
DC+
G1
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Thermistor Connection 1
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Negative Bus connection
DC Positive Bus connection
DC Positive Bus connection
M1 Gate (High side switch)
M1 Kelvin Emitter (High side switch)
M3 Gate (Low side switch)
M3 Kelvin Emitter (High side switch)
DC Positive Bus connection
DC Positive Bus connection
S1
G3
S3
DC+
DC+
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
SiC MOSFET
Drain−Source Voltage
Gate−Source Voltage
V
1200
+25/−15
30
V
V
DSS
V
GS
Continuous Drain Current @ T = 80°C (T = 175°C)
I
D
A
C
J
Pulsed Drain Current (T = 175°C)
I
90
A
J
Dpulse
Maximum Power Dissipation (T = 175°C)
P
74
W
ms
°C
°C
J
tot
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T ≤ 150°C
T
sc
TBD
−40
GE
CE
J
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
175
Storage Temperature Range
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 60 Hz
Creepage Distance
T
−40 to 150
°C
stg
V
4800
12.7
V
RMS
is
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
www.onsemi.com
2
NXH040F120MNF1PTG, NXH040F120MNF1PG
RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
Min
Max
Unit
T
J
−40
175
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
T = 25 °C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain−Source On Resistance
V
V
V
V
V
V
V
V
= 0 V, I = 200 mA
V
(BR)DSS
1200
–
–
–
100
56
–
V
GS
GS
GS
GS
GS
GS
GS
DS
D
= 0 V, V = 1200 V
I
–
mA
DS
DSS
= 20 V, I = 25 A, T = 25°C
R
V
–
42
mW
D
J
DS(ON)
= 20 V, I = 25 A, T = 125°C
–
55
D
J
= 20 V, I = 25 A, T = 150°C
–
61
–
D
J
Gate−Source Threshold Voltage
Gate Leakage Current
Input Capacitance
= V , I = 10 mA
1.8
−500
–
2.81
–
4.3
500
–
V
DS
D
GS(TH)
= −10 V/20 V, V = 0 V
I
nA
pF
DS
GSS
= 800 V, V = 0 V, f = 1 MHz
C
1 505
12
GS
ISS
RSS
OSS
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
C
C
–
–
–
159
122.1
32.2
34.7
30.8
3.04
59.8
7.42
0.06
0.10
30.2
3.19
64.4
5.83
0.05
0.12
3.97
3.52
3.44
18.25
700
61
–
V
DS
= 800 V, V = 20 V, I = 25 A
Q
G(TOTAL)
–
–
nC
nC
nC
ns
GS
D
Gate−Source Charge
Gate−Drain Charge
Q
GS
Q
GD
–
–
–
–
Turn−on Delay Time
Rise Time
T = 25°C,
t
–
–
J
d(on)
V
V
= 600 V, I = 25 A,
D
DS
GS
t
r
–
–
= −5 V/18 V, R = 2.2 W
G
Turn−off Delay Time
Fall Time
t
–
–
d(off)
t
f
–
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
–
–
mJ
ns
ON
OFF
d(on)
E
–
–
T = 150°C,
t
–
–
J
V
V
= 600 V, I = 25 A,
D
DS
GS
t
r
–
–
= −5 V/18 V, R = 2.2 W
G
Turn−off Delay Time
Fall Time
t
–
–
d(off)
t
f
–
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Diode Forward Voltage
E
ON
–
–
mJ
V
E
OFF
–
–
I
D
I
D
I
D
= 25 A, T = 25°C
V
SD
–
6
J
= 25 A, T = 125°C
–
–
J
= 25 A, T = 150°C
–
–
J
Reverse Recovery Time
T = 25°C,
t
rr
–
–
ns
nC
A
J
V
V
= 600 V, I = 25 A,
D
DS
GS
Reverse Recovery Charge
Q
–
–
rr
= −5 V/18 V, R = 2.2 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
–
RRM
di/dt
–
7629
405
–
A/ms
mJ
E
rr
–
–
www.onsemi.com
3
NXH040F120MNF1PTG, NXH040F120MNF1PG
ELECTRICAL CHARACTERISTICS (continued)
T = 25 °C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Reverse Recovery Time
T = 25°C,
t
–
–
–
–
–
–
–
20.81
1250
97
–
–
–
–
–
–
–
ns
nC
J
V
V
rr
= 600 V, I = 25 A,
D
DS
GS
Reverse Recovery Charge
Q
rr
= −5 V/18 V, R = 2.2 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
A
RRM
di/dt
11 414
753
A/ms
mJ
E
rr
Thermal Resistance − Chip−to−Case
Thermal Resistance − Chip−to−Heatsink
M1, M2, M3, M4
R
0.8356
1.291
°C/W
°C/W
thJC
thJH
Thermal grease,
Thickness = 2 Mil 2%,
A = 2.8 W/mK
R
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
T = 25°C
R
–
–
5
457
–
–
–
3
–
–
–
–
kW
W
25
T = 100°C
R
100
DR/R
−3
–
%
Power Dissipation
Power Dissipation Constant
B−value
P
50
mW
mW/K
K
D
–
5
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3 375
3 455
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH040F120MNF1PTG
NXH040F120MNF1PTG
F1−4PACK
28 Units / Blister Tray
Press−fit Pins with pre−applied
thermal interface material (TIM)
(Pb−Free and Halide−Free)
NXH040F120MNF1PG
NXH040F120MNF1PG
F1−4PACK
Press−fit Pins
(Pb−Free and Halide−Free)
28 Units / Blister Tray
www.onsemi.com
4
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS
(25°C UNLESS OTHERWISE NOTED)
Figure 2. MOSFET Typical Output Characteristics
Figure 4. MOSFET Typical Output Characteristics
Figure 6. Body Diode Forward Characteristic
Figure 3. MOSFET Typical Output Characteristics
Figure 5. MOSFET Typical Transfer Characteristics
Figure 7. Gate−to−Source Voltage vs. Total Charge
www.onsemi.com
5
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS (CONTINUED)
(25°C UNLESS OTHERWISE NOTED)
Figure 8. Typical Switching Loss EON vs. IC
Figure 9. Typical Switching Loss EON vs. RG
Figure 11. Typical Switching Loss EOFF vs. RG
Figure 10. Typical Switching Loss EOFF vs. IC
Figure 12. Typical Turn−On Switching Tdon vs. IC
Figure 13. Typical Turn−On Switching Tdon vs. RG
www.onsemi.com
6
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS (CONTINUED)
(25°C UNLESS OTHERWISE NOTED)
Figure 14. Typical Turn−Off Switching Tdoff vs. IC
Figure 16. Typical Turn−On Switching Tr vs. IC
Figure 18. Typical Turn−Off Switching Tf vs. IC
Figure 15. Typical Turn−Off Switching Tdoff vs. RG
Figure 17. Typical Turn−On Switching Tr vs. RG
Figure 19. Typical Turn−Off Switching Tf vs. RG
www.onsemi.com
7
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS (CONTINUED)
(25°C UNLESS OTHERWISE NOTED)
Figure 20. Typical Reverse Recovery Energy vs. IC
Figure 22. Typical Reverse Recovery Time vs. IC
Figure 24. Typical Reverse Recovery Charge vs. IC
Figure 21. Typical Reverse Recovery Energy vs. RG
Figure 23. Typical Reverse Recovery Time vs. RG
Figure 25. Typical Reverse Recovery Charge vs. RG
www.onsemi.com
8
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS (CONTINUED)
(25°C UNLESS OTHERWISE NOTED)
Figure 26. Typical Reverse Recovery Current vs. IC
Figure 27. Typical Reverse Recovery Current vs. RG
Figure 29. Typical di/dt vs. RG
Figure 28. Typical di/dt vs. IC
www.onsemi.com
9
NXH040F120MNF1PTG, NXH040F120MNF1PG
TYPICAL CHARACTERISTICS (CONTINUED)
(25°C UNLESS OTHERWISE NOTED)
Figure 30. Capacitance vs. Drain−to−Source Voltage
Figure 31. MOSFET Junction−to−Case Transient Thermal Impedance
www.onsemi.com
10
NXH040F120MNF1PTG, NXH040F120MNF1PG
Table 1. FOSTER NETWORKS – M1, M2, M3, M4
M1, M3
M2, M4
Foster
Element #
Rth (K/W)
0.051996
0.046504
0.008903
0.165341
0.600991
Cth (Ws/K)
0.002404
0.020373
0.221087
0.039489
0.065660
Rth (K/W)
0.054881
0.010554
0.064895
0.094862
0.610507
Cth (Ws/K)
0.002284
0.082427
0.028973
0.058574
0.052914
1
2
3
4
5
Table 2. CAUER NETWORKS – M1, M2, M3, M4
M1, M3
M2, M4
Cauer
Element #
Rth (K/W)
0.076857
0.141063
0.274014
0.113973
0.267827
Cth (Ws/K)
0.001961
0.010485
0.018050
0.038620
0.046224
Rth (K/W)
0.076754
0.182594
0.136313
0.215815
0.224225
Cth (Ws/K)
0.001921
0.011596
0.018196
0.019717
0.049799
1
2
3
4
5
www.onsemi.com
11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22 33.8x42.5 (PRESS FIT)
CASE 180BX
ISSUE A
DATE 20 AUG 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
AT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON19724H
PIM22 33.8x42.5 (PRESS FIT)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NXH100B120H3Q0PG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
ONSEMI
NXH100B120H3Q0PTG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
ONSEMI
NXH100B120H3Q0SG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
ONSEMI
NXH100B120H3Q0STG
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
ONSEMI
©2020 ICPDF网 联系我们和版权申明