NUP5120X6T1 [ONSEMI]

浪涌保护器阵列;
NUP5120X6T1
型号: NUP5120X6T1
厂家: ONSEMI    ONSEMI
描述:

浪涌保护器阵列

局域网 光电二极管 瞬态抑制器
文件: 总4页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NUP5120X6  
5−Line Transient Voltage  
Suppressor Array  
This 5−line voltage transient suppressor array is designed for  
application requiring transient voltage protection capability. It is  
intended for use in over−transient voltage and ESD sensitive  
equipment such as cell phones, portables, computers, printers and  
other applications. This device features a monolithic common anode  
design which protects five independent lines in a single  
SOT−563 package.  
http://onsemi.com  
SOT−563 5−LINE TRANSIENT  
VOLTAGE SUPPRESSOR  
Features  
PIN ASSIGNMENT  
Protects up to 5 Lines in a Single SOT−563 Package  
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model  
and Class C (Exceeding 400 V) per Machine Model.  
Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)  
This is a Pb−Free Device  
1
2
3
6
5
4
Applications  
Hand Held Portable Applications  
Serial and Parallel Ports  
Notebooks, Desktops, Servers  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
MARKING  
DIAGRAM  
Symbol  
Rating  
Value  
Unit  
P
1
Peak Power Dissipation  
8x20 msec double exponential waveform,  
(Note 1)  
90  
W
PK  
4
5
SOT−563  
CASE 463A  
STYLE 6  
6
RN MG  
G
3
2
1
T
Operating Junction Temperature Range  
Storage Temperature Range  
−40 to 125  
−55 to 150  
260  
°C  
°C  
°C  
J
RN  
M
G
= Specific Device Code  
= Month Code  
= Pb−Free Package  
T
T
STG  
L
Lead Solder Temperature – Maximum  
(10 seconds)  
(Note: Microdot may be in either location)  
ESD  
Human Body Model (HBM)  
Machine Model (MM)  
16000  
400  
V
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
15000  
8000  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Non−repetitive current pulse per Figure 1.  
NUP5120X6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
NUP5120X6T2G SOT−563 4000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 4  
NUP5120/D  
 
NUP5120X6  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)  
J
Parameter  
Reverse Working Voltage  
Breakdown Voltage  
Reverse Leakage Current  
Capacitance  
Conditions  
Symbol  
Min  
Typ  
Max  
5.0  
7.2  
0.5  
70  
Unit  
V
(Note 2)  
I = 1 mA, (Note 3)  
V
RWM  
V
6.2  
6.8  
0.01  
54  
V
T
BR  
V
= 3 V  
I
mA  
pF  
RWM  
R
V
V
= 0 V, f = 1 MHz (Line to GND)  
= 2.5 V, f = 1 MHz (Line to GND)  
C
J
R
R
2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC  
RWM  
or continuous peak operating voltage level.  
3. V is measured at pulse test current I .  
BR  
T
http://onsemi.com  
2
 
NUP5120X6  
120  
100  
80  
1000  
T = 25 °C  
A
100  
60  
40  
20  
0
10  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
T , AMBIENT TEMPERATURE (°C)  
A
PULSE DURATION (μS)  
Figure 2. Peak Power vs. Pulse Duration  
Figure 1. Power Derating vs. Ambient  
Temperature  
60  
50  
40  
30  
20  
100  
10  
T = 25 °C  
A
T = 25 °C  
A
1
10  
0
0.1  
0
1
2
3
4
5
6
6
8
10  
12  
14  
16  
V , REVERSE VOLTAGE (V)  
R
V
, CLAMP VOLTAGE (V)  
CL  
Figure 4. Typical Capacitance vs. Reverse  
Voltage  
Figure 3. Peak Current vs. Clamp Voltage  
1
0.1  
1000  
100  
10  
T = 25 °C  
A
T = 25 °C  
A
T = 125 °C  
J
T = 125 °C  
J
T = 25 °C  
J
T = 25 °C  
J
1
0.01  
0.001  
0.1  
0.01  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1
2
3
4
5
6
FORWARD VOLTAGE (V)  
REVERSE VOLTAGE (V)  
Figure 6. Typical Forward Current vs. Forward  
Voltage  
Figure 5. Reverse Current vs. Reverse Voltage  
http://onsemi.com  
3
NUP5120X6  
PACKAGE DIMENSIONS  
SOT−563, 6 LEAD  
CASE 463A−01  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
C
−X−  
K
6
5
2
4
3
MILLIMETERS  
INCHES  
B
−Y−  
DIM MIN  
MAX  
1.70  
1.30  
0.60  
0.27  
MIN  
MAX  
0.067  
0.051  
0.024  
0.011  
S
J
A
B
C
D
G
J
1.50  
1.10  
0.50  
0.17  
0.059  
0.043  
0.020  
0.007  
1
0.50 BSC  
0.020 BSC  
D 56 PL  
0.08  
0.10  
1.50  
0.18  
0.30  
1.70  
0.003  
0.004  
0.059  
0.007  
0.012  
0.067  
G
M
0.08 (0.003)  
X Y  
K
S
STYLE 6:  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
SOLDERING FOOTPRINT  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5 0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NUP5120/D  

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