NTTFS5D9N08HTWG [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 84 A, 5.9 mΩ;
| 型号： | NTTFS5D9N08HTWG |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 84 A, 5.9 mΩ 栅 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Single N-Channel
80 V, 5.9 mW, 84 A
NTTFS5D9N08H
Features
• Max R
• Max R
= 5.9 mW at V = 10 V, I = 23 A
GS D
DS(on)
= 9 mW at V = 6 V, I = 12 A
DS(on)
GS
D
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• High Performance Technology for Extremely Low R
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Typical Applications
5.9 mW @ 10 V
9 mW @ 6 V
80 V
84 A
• DC−DC Buck Converters
• Point of Load
• High Efficiency Load Switch and Low Side Switching
• Oring FET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
N−CHANNEL MOSFET
Continuous Drain
T
= 25°C
I
84
A
C
D
Current R
(Note 1)
q
JC
Steady
State
Power Dissipation
(Note 1)
P
100
13
W
A
D
R
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
Steady
State
(Notes 1, 2)
Power Dissipation
P
2.7
W
D
WDFN8
R
(Notes 1, 2)
q
JA
3.3X3.3, 0.65P
CASE 483AW
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
535
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
83
80
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
S5D9
Energy (I = 40 A, L = 0.1 mH) (Note 3)
AV
AYWWZZ
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
S5D9 = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Plant Code
= Numeric Year Code
WW = Work Week Code
ZZ = Assembly Lot Code
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
1.5
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
54.8
q
Device
NTTFS5D9N08HTWG
Package
Shipping†
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
PQFN8
(Pb−Free) Tape & Reel
3000 /
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
3. E of 80 mJ is based on started T = 25°C, I = 40 A, V = 80 V, V =
AS
J
AS
DD
GS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
10 V. 100% test at I = 40 A.
AS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2020 − Rev. 1
NTTFS5D9N08H/D
NTTFS5D9N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
42.91
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 80 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 120 mA
2.0
4.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 120 mA, ref to 25°C
D
−6.81
4.6
6.6
135
1
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V, I = 23 A
5.9
9.0
DS(on)
D
V
= 6 V, I = 12 A
D
GS
DS
Forward Transconductance
Gate−Resistance
g
FS
V
= 15 V, I = 23 A
S
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 40 V
2040
303
12
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 6 V, V = 64 V, I = 11.5 A
20
G(TOT)
DS
D
Total Gate Charge
Q
31
G(TOT)
(10V)
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
8.4
6.8
4.4
GS
GD
GP
V
V
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
V
D
= 6 V, V = 64 V,
17.2
8.7
ns
d(ON)
GS
DS
I
= 11.5 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
21.6
5.8
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.8
0.7
39
28
21
16
1.2
V
SD
GS
J
I
= 23 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
V
V
= 0 V, dI /dt = 100 A/ms,
ns
nC
ns
ns
RR
GS
GS
S
I
S
= 11.5 A
Q
RR
t
= 0 V, dI /dt = 100 A/ms,
S
a
I
S
= 11.5 A
Discharge Time
t
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures
5. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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2
NTTFS5D9N08H
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
90
6.0 V
5.5 V
10 V to 7 V
80
70
60
50
40
30
20
V
= 5 V
DS
V
= 5.0 V
GS
T = 25°C
J
4.5 V
4.0 V
10
0
10
0
T = 150°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
58
53
48
43
38
33
28
23
18
13
14
13
12
11
T = 25°C
J
T = 25°C
D
J
I
= 23 A
10
9
8
V
= 6 V
7
GS
6
V
GS
= 10 V
5
4
3
8
3
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
, GATE−TO−SOURCE VOLTAGE (V)
0
12
24
36
48
60
72
84
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.6
100K
10K
V
= 10 V
= 23 A
GS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
T = 150°C
J
T = 125°C
J
1K
T = 85°C
J
0.8
0.6
−50 −25
V
= 0 V
GS
100
0
25
50
75 100 125 150 175
0
10
20
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS5D9N08H
TYPICAL CHARACTERISTICS
10
9
10K
1K
Q
G(tot)
C
ISS
8
7
6
5
4
3
C
C
OSS
Q
Q
GD
GS
100
RSS
10
1
T = 25°C
V
= 0 V
J
GS
2
1
0
I
= 11.5 A
= 64 V
T = 25°C
D
V
J
f = 1 MHz
DS
0
3
6
9
12 15 18 21 24 27 30 33
0
10
20
30
40
50
60
70
80
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
1000
100
10
V
GS
= 0 V
V
V
= 6 V
= 64 V
= 11.5 A
GS
DS
I
D
t
t
d(off)
d(on)
10
1
t
r
1
t
f
T = 150°C
J
T = 25°C T = −55°C
J J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
T
= 25°C
C
10 ms
Single Pulse
≤ 10 V
10
1
V
100 ms
1 ms
10 ms
100 ms
1 s
GS
1
T
= 125°C
R
Limit
J(initial)
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS5D9N08H
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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