NTTFS6H850NLTAG [ONSEMI]
单 N 沟道,功率 MOSFET,80V,108A,8.66mΩ;型号: | NTTFS6H850NLTAG |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,80V,108A,8.66mΩ |
文件: | 总7页 (文件大小:205K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTTFS6H850NL
Power MOSFET
80 V, 8.6 mW, 64 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
8.6 mW @ 10 V
11 mW @ 4.5 V
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
80 V
64 A
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
64
A
N−Channel
D (5 − 8)
C
D
q
JC
T
C
45
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
73
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
37
Continuous Drain
Current R
T = 25°C
A
I
D
14.8
10.4
3.9
1.9
308
G (4)
q
JA
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
S (1, 2, 3)
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
MARKING DIAGRAM
Pulsed Drain Current
T
C
= 25°C, t = 10 ms
I
DM
A
p
1
1
S
S
S
G
D
D
D
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
XXXX
AYWWG
G
WDFN8
(m8FL)
Source Current (Body Diode)
I
61
A
S
CASE 511AB
Single Pulse Drain−to−Source Avalanche
E
AS
208
mJ
Energy (I
= 3.4 A)
L(pk)
XXXX = Specific Device Code
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
2.0
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
R
°C/W
q
JC
JA
39
q
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2019 − Rev. 0
NTTFS6H850NL/D
NTTFS6H850NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
44.2
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
nA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Drain−to−Source On Resistance
I
V
= 0 V, V = 20 V
DS GS
GSS
R
V
= 10 V, I = 10 A
7.1
8.9
8.6
11
mW
DS(on)
GS
GS
GS
D
V
= 4.5 V, I = 10 A
D
Gate Threshold Voltage
V
V
= V , I = 70 mA
1.2
1.6
2.0
V
GS(TH)
DS
D
Gate Threshold Voltage Temperature
Coefficient
V
/T
−5.2
mV/°C
GS(TH)
J
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 8 V, I = 10 A
64.1
S
FS
DS
D
C
1450
10
pF
pF
pF
nC
iss
rss
oss
V
GS
= 0 V, f = 1.0 MHz
Reverse Transfer Capacitance
Output Capacitance
C
V
DS
= 40 V
C
182
26
Total Gate Charge
Q
V
= 10 V, V = 40 V, I = 10 A
GS DS D
G(TOT)
G(TOT)
Total Gate Charge
Q
13
Gate−to−Source Charge
Gate−to−Drain Charge
Q
4.0
4.2
V
GS
= 4.5 V, V = 40 V, I = 10 A
GS
DS
D
Q
GD
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
t
9
21
26
5
ns
d(on)
t
d(off)
V
= 4.5 V, V = 64 V,
DS
GS
D
I
= 10 A, R = 2.5 mW
G
t
r
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
37
22
15
40
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl/dt = 100 A/ms,
I
S
= 10 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS6H850NL
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
70
V
= 3.4 V to 10 V
3.2 V
3.0 V
GS
V
DS
= 10 V
60
50
40
2.8 V
30
20
T = 25°C
J
2.6 V
2.4 V
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
6
7
8
0
0.5 1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
24
22
20
18
16
14
12
10
T = 25°C
J
T = 25°C
D
J
V
= 4.5 V
= 10 V
GS
I
= 10 A
8
V
GS
7
8
6
4
6
5
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000
100
10
2.5
2.0
1.5
V
I
= 10 V
= 10 A
GS
T = 175°C
D
J
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.1
T = 25°C
1.0
0.5
J
0.01
0.001
5
15
V
25
35
45
55
65
75
−50 −25
0
25
50
75 100 125 150
175
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS6H850NL
TYPICAL CHARACTERISTICS
10
10,000
1000
100
C
ISS
8
6
C
OSS
4
2
0
Q
Q
GD
GS
10
1
V
= 40 V
DS
V
= 0 V
GS
C
RSS
T = 25°C
J
T = 25°C
J
I
D
= 10 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
V
GS
= 0 V
100
t
r
t
d(off)
10
1
t
d(on)
V
V
= 4.5 V
= 64 V
GS
DS
t
f
I
D
= 10 A
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
T
V
= 25°C
C
≤ 10 V
GS
T (initial) = 25°C
J
Single Pulse
100
10
T (initial) = 100°C
J
1
1
10 ms
0.5 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
1 ms
1000
10 ms
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Curent vs. Time in
Avalanche
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4
NTTFS6H850NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTTFS6H850NLTAG
850L
WDFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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