NTTFSS1D1N02P1E [ONSEMI]
Power MOSFET, Single, N-Channel, 25V/0.85mΩ, WDFN9 3x3, Source Down;
| 型号： | NTTFSS1D1N02P1E |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, N-Channel, 25V/0.85mΩ, WDFN9 3x3, Source Down |
| 文件： | 总7页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, Source Down,
WDFN9
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
0.85 mW @ 10 V
1.05 mW @ 4.5 V
25 V
264 A
25 V, 0.85 mW, 264 A
NMOS
NTTFSS1D1N02P1E
D (5, 6, 7, 8)
Features
• Advanced Source−Down Package Technology (3.3x3.3mm) with
Excellent Thermal Conduction
G (9)
• Ultra Low R
to Improve System Efficiency
• Low Q and Capacitance to Minimize Driving and Switching Losses
DS(on)
G
S (1, 2, 3, 4)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
• DC−DC Switching Applications
• ORing Applications
1D1N2
AWLYWW
• Power Load Switch
WDFN9
CASE 511EB
• Battery Management and Protection
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
1D1N2 = Specific Device Code
= Assembly Location
WL = Wafer Lot
= Year
A
Parameter
Drain−to−Source Voltage
Symbol
Value
25
Unit
V
V
DSS
Y
WW = Work Week
Gate−to−Source Voltage
V
GS
16
V
Continuous Drain
T
T
T
= 25°C
= 85°C
= 25°C
I
264
189
89
A
C
C
C
D
Current R
(Note 2)
q
JC
Steady
State
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Power Dissipation
(Note 2)
P
W
A
D
R
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
39
28
2
q
JA
T = 85°C
A
Steady
State
(Notes 1, 2)
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
173
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 63 A, L = 0.1 mH)
L(pk)
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
stg
+150
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values
shown, they are not constants and are valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 0
NTTFSS1D1N02P1E/D
NTTFSS1D1N02P1E
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
1.4
60
Unit
Junction−to−Case − Steady State (Note 1)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 1, 2)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
R
q
JA
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
12.8
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
mA
DSS
GS
DS
J
V
= 20 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 16 V
nA
GSS
DS
GS
GS
V
V
= V , I = 934 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 934 mA, ref to 25°C
−4.9
0.70
0.83
146
0.8
mV/°C
mW
GS(TH)
J
D
R
V
GS
GS
= 10 V
= 4.5 V
I
= 27 A
= 27 A
0.85
1.05
DS(on)
D
D
V
I
Forward Transconductance
Gate Resistance
g
FS
V
DS
= 3 V, I = 27 A
S
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
4360
1150
80
pF
nC
ISS
Output Capacitance
C
V
= 0 V, V = 13 V, f = 1 MHz
DS
OSS
RSS
GS
Reverse Capacitance
Total Gate Charge
C
Q
V
GS
= 10 V, V = 13 V; I = 27 A
60
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Q
26.3
6.2
Threshold Gate Charge
Gate−to−Drain Charge
Gate−to−Source Charge
Q
G(TH)
V
GS
= 4.5 V, V = 13 V; I = 27 A
DS D
Q
4.0
GD
GS
Q
10.8
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
10.8
3.4
ns
d(ON)
t
r
V
= 10 V, V = 13 V,
DD
GS
D
I
= 30 A, R = 3 W
G
Turn−Off Delay Time
Fall Time
t
34.7
5.1
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.76
0.63
45
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 27 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dI/dt = 100 A/ms,
I
S
= 27 A
Reverse Recovery Charge
Q
40
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTTFSS1D1N02P1E
TYPICAL CHARACTERISTICS
250
200
150
250
V
= 10 to 3.4 V
GS
V
DS
= 10 V
3.0 V
2.8 V
200
150
100
3.2 V
T = 25°C
J
100
50
0
2.6 V
2.4 V
50
0
T = 125°C
T = −55°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
V
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.2
1.1
1.0
0.9
1.4
1.3
1.2
1.1
1.0
0.9
0.8
T = 25°C
J
T = 25°C
D
J
I
= 27 A
V
= 4.5 V
= 10 V
GS
0.8
0.7
0.6
V
GS
0.7
0.6
3
4
5
6
7
8
9
10
10
50
90
130
170
210
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current
Voltage
100K
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 10 V
= 27 A
GS
I
D
T = 150°C
J
10K
1K
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
10
1
0.7
0.6
−50 −25
0
25
50
75
100
125
150
5
7
9
11 13 15 17 19
21 23 25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFSS1D1N02P1E
TYPICAL CHARACTERISTICS
10K
1K
10
C
C
ISS
V
= 13 V
= 27 A
DS
9
8
7
6
5
4
3
2
I
D
T = 25°C
J
OSS
Q
GD
Q
GS
100
10
C
RSS
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
5
10
15
20
25
100
100
0
10
20
30
40
50
60
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
DS
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
1000
V
= 0 V
GS
V
V
= 10 V
= 13 V
= 27 A
GS
t
d(off)
DS
I
D
t
f
100
t
r
t
d(on)
10
1
1
T = 150°C
J
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
J(initial)
10 ms
100 ms
T
= 100°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
1 ms
10 ms
V
GS
1
100 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.000001 0.00001 0.0001 0.001
0.1
1
10
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFSS1D1N02P1E
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Junction−to−Case Transient Thermal Response
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTTFSS1D1N02P1E
1D1N2
WDFN9
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN9 3.3x3.3, 0.65P
CASE 511EB
ISSUE B
DATE 21 JUL 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
= Assembly Location
WL = Wafer Lot
= Year
WW = Work Week
*This information is generic. Please refer to
A
XXXXXX
XXXXXX
AWLYWW
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Y
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON08290H
WDFN9 3.3x3.3, 0.65P
PAGE 1 OF 1
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