NTMT061N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 40 A, 61 mΩ, Power88;![NTMT061N60S5H](http://pdffile.icpdf.com/pdf2/p00360/img/icpdf/NTMT061N60S5_2204289_icpdf.jpg)
型号: | NTMT061N60S5H |
厂家: | ![]() |
描述: | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 40 A, 61 mΩ, Power88 |
文件: | 总7页 (文件大小:278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FAST, QFN88-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
61 mW @ V = 10 V
40 A
GS
N−CHANNEL MOSFET
600 V, 61 mW, 41 A
D
NTMT061N60S5H
Description
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application. The Power88 package which is an ultraslim SMD
package offers excellent switching performance by providing kelvin
source configuration and lower parasitic source inductance.
G
S1: Driver Source
S2: Power Source
S1 S2
Features
• 650 V @ T = 150°C
J
• Typ. R
= 48.8 mW
• 100% Avalanche Tested
DS(on)
S2
S2
S1
G
• Pb−Free, Halogen Free/BFR Free and RoHS Compliant
Applications
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
TDFN4
CASE 520AB
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
V
GSS
NTMT061
N60S5H
AWLYWW
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
41
A
C
D
T
C
25
NTMT061N60S5H = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Power Dissipation
T
C
T
C
T
C
P
250
144
144
W
A
D
Pulsed Drain Current (Note 1)
I
DM
WW
= Work Week
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Range
ORDERING INFORMATION
Source Current (Body Diode)
I
41
A
†
S
Device
NTMT061N60S5H
Package
Shipping
Single Pulse Avalanche
Energy
I = 6.7 A,
G
E
AS
376
mJ
L
TDFN4
3000 / Tape &
Reel
R
= 25 W
Avalanche Current
I
6.7
2.5
120
20
A
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 20.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 1
NTMT061N60S5H/D
NTMT061N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.5
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
45
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
2
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 20.5 A, T = 25_C
−
2.7
−
48.8
−
61
4.3
−
mW
V
DS(on)
GS
D
J
V
= V , I = 4.4 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 20.5 A
40.8
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
4176
60.4
939
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr.)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
101
73.6
20.3
18.9
0.61
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 20.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
21.6
8.64
76.1
2.62
−
−
−
−
ns
d(on)
GS
D
DD
I
= 20.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 20.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 20.5 A,
416
7405
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMT061N60S5H
TYPICAL CHARACTERISTICS
1000
80
70
60
50
40
30
20
10
0
V
= 10 V
T = 25°C
GS
J
V
DS
= 20 V
6.0 V
7.0 V
100
10
1
T = 25°C
J
5.0 V
T = 150°C
J
4.5 V
4.0 V
T = −55°C
J
0
5
10
15
20
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
1000
100
10
V
GS
= 0 V
T = 25°C
J
T = 25°C
J
V
GS
= 10 V
V
GS
= 20 V
1
T = 150°C
J
T = −55°C
J
0.1
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
I , DRAIN CURRENT (A)
D
V
SD
, DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
5
10
10
C
C
C
= C + C (C = shorted)
GS GD DS
V
= 0 V
ISS
GS
I
D
= 20.5 A
= C + C
f = 250 kHz
OSS
RSS
DS
GD
4
V
DS
= 130 V
10
= C
GD
C
8
6
4
ISS
3
10
V
DS
= 400 V
2
10
C
OSS
1
C
RSS
10
2
0
0
10
−1
10
0
5
10 15 20 25 30
35 40 45 50
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTMT061N60S5H
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 20.5 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
0
25 50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
40
35
100
Operation in this Area is
Limited by R
10 ms
DS(on)
30
25
20
15
10
1
100 ms
1 ms
10 ms
DC
10
5
T
= 25°C
C
T = 150°C
J
Single Pulse
0
25
0.1
0.1
50
75
100
125
150
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NTMT061N60S5H
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
0.01
D = 0.02
Notes:
(t) = 0.5°C/W Max
Z
q
JC
D = 0.01
Duty Cycle, D = t /t
1
2
Single Pulse
T
JM
= P
x Z (t) + T
q
DM JC C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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5
NTMT061N60S5H
PACKAGE DIMENSIONS
TDFN4 8x8, 2P
CASE 520AB
ISSUE O
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6
NTMT061N60S5H
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