NTMT080N60S5 [ONSEMI]

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 40 A, 80 mΩ, Power88;
NTMT080N60S5
型号: NTMT080N60S5
厂家: ONSEMI    ONSEMI
描述:

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 40 A, 80 mΩ, Power88

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, SUPERFET),  
EASY, PQFN88-4L  
600 V, 80 mW, 40 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
600 V  
80 mW @ V = 10 V  
40 A  
GS  
NCHANNEL MOSFET  
D
NTMT080N60S5  
Description  
SUPERFET V MOSFET Easy Drive series combines excellent  
switching performance without sacrificing ease of use and EMI issues  
for both hard and soft switching topologies. The Power88 package  
which is an ultraslim SMD package offers excellent switching  
performance by providing kelvin source configuration and lower  
parasitic source inductance.  
G
S1: Driver Source  
S2: Power Source  
S1 S2  
Features  
650 V @ T = 150C  
J
Typ. R  
100% Avalanche Tested  
= 64 mW  
DS(on)  
S2  
S2  
S1  
G
TDFN4 8x8 2P  
CASE 520AB  
PbFree, Halogen Free / BFR Free and are RoHS Compliant  
Applications  
Telecom / Server Power Supplies  
EV Charger / UPS / Solar / Industrial Power Supplies  
MARKING DIAGRAM  
ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
600  
30  
30  
40  
Unit  
V
V
DSS  
NTMT080  
N60S5  
AWLYWW  
GatetoSource Voltage  
DC  
V
GS  
V
AC (f > 1 Hz)  
Continuous Drain Current  
T
= 25C  
= 100C  
= 25C  
= 25C  
I
D
A
C
T
C
25  
NTMT080N60S5 = Specific Device Code  
Power Dissipation  
T
T
P
D
212  
116  
116  
W
A
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
C
Pulsed Drain Current (Note 1)  
I
DM  
C
Pulsed Source Current (Body  
Diode) (Note 1)  
I
A
SM  
WW  
= Work Week  
Operating Junction and Storage Temperature T , T  
55 to  
+150  
C  
J
STG  
Range  
ORDERING INFORMATION  
Source Current (Body Diode)  
I
S
40  
A
Device  
NTMT080N60S5  
Package  
Shipping  
Single Pulse Avalanche  
Energy  
I = 5.8 A  
G
E
287  
mJ  
L
AS  
R
= 25 W  
TDFN4  
3000 / Tape &  
Reel  
Avalanche Current  
I
AS  
5.8  
2.12  
120  
50  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Repetitive Avalanche Energy (Note 1)  
MOSFET dv/dt  
E
AR  
mJ  
dv/dt  
V/ns  
Peak Diode Recovery dv/dt (Note 2)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 seconds)  
T
L
260  
C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
*Drain current limited by maximum junction temperature.  
1. Repetitive rating: pulsewidth limited by maximum junction temperature.  
2. I 16.5 A, di/dt 200 A/s, V 400 V, starting T = 25C.  
SD  
DD  
J
Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
November, 2022 Rev. 0  
NTMT080N60S5/D  
 
NTMT080N60S5  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
0.59  
45  
Unit  
Thermal Resistance, JunctiontoCase  
Thermal Resistance, JunctiontoAmbient  
R
C/W  
q
JC  
R
q
JA  
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
I
= 0 V, I = 1 mA, T = 25_C  
600  
V
(BR)DSS  
GS  
D
J
DraintoSource Breakdown Voltage  
Temperature Coefficient  
DV  
/
= 10 mA, Referenced to 25_C  
630  
mV/_C  
(BR)DSS  
D
DT  
J
Zero Gate Voltage Drain Current  
GatetoSource Leakage Current  
ON CHARACTERISTICS  
I
V
GS  
= 0 V, V = 600 V, T = 25_C  
2
mA  
DSS  
GSS  
DS  
J
I
V
= 30 V, V = 0 V  
100  
nA  
GS  
DS  
DraintoSource On Resistance  
Gate Threshold Voltage  
R
V
V
= 10 V, I = 16.5 A, T = 25_C  
2.4  
64  
80  
4
mW  
V
DS(on)  
GS  
D
J
V
= V , I = 3.4 mA, T = 25_C  
GS(th)  
GS  
DS  
D
J
Forward Transconductance  
g
FS  
V
DS  
= 20 V, I = 16.5 A  
28.8  
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
C
V
= 400 V, V = 0 V, f = 250 kHz  
3029  
47.1  
746  
pF  
ISS  
DS  
GS  
Output Capacitance  
C
OSS  
Time Related Output Capacitance  
C
I = Constant, V = 0 V to 400 V,  
D DS  
OSS(tr.)  
V
GS  
= 0 V  
Energy Related Output Capacitance  
Total Gate Charge  
C
V
= 0 V to 400 V, V = 0 V  
83.8  
56.2  
14.8  
16.3  
5.66  
OSS(er.)  
DS  
GS  
Q
V
= 400 V, I = 16.5 A, V = 10 V  
nC  
G(tot)  
DD  
D
GS  
GatetoSource Charge  
GatetoDrain Charge  
Gate Resistance  
Q
GS  
Q
GD  
R
f = 1 MHz  
W
G
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
Rise Time  
t
V
= 0/10 V, V = 400 V,  
29.4  
11.4  
88.2  
3.62  
ns  
d(on)  
GS  
D
DD  
I
= 16.5 A, R = 4.7 W  
G
t
r
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
SOURCE-TODRAIN DIODE CHARACTERISTICS  
Forward Diode Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
V
GS  
= 0 V, I = 16.5 A, T = 25_C  
1.2  
V
SD  
RR  
SD  
J
t
V
= 0 V, I = 16.5 A,  
338  
5167  
ns  
nC  
GS  
SD  
dI/dt = 100 A/ms, V = 400 V  
DD  
Q
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
NTMT080N60S5  
TYPICAL CHARACTERISTICS  
80  
70  
60  
50  
40  
30  
20  
10  
0
1000  
TJ=25°C  
VDS=20V  
100  
10  
VGS=4V  
GS=4.5V  
VGS=5V  
V
V
V
GS=6V  
GS=7V  
TJ=55°C  
TJ=25°C  
TJ=150°C  
VGS=10V  
1
0
5
10  
15  
20  
3
4
5
6
7
VDS, Drain to Source Voltage (V)  
VGS, Gate to Source Voltage (V)  
Figure 1. OnRegion Characteristics  
Figure 2. Transfer Characteristics  
160  
140  
120  
100  
80  
1000  
100  
10  
TJ=25°C  
VGS=0V  
60  
40  
1
TJ=150°C  
TJ=25°C  
TJ=55°C  
20  
VGS=10V  
VGS=20V  
0
0.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
ID, Drain Current (A)  
VSD, Diode Forward Voltage (V)  
Figure 3. OnResistance Variation vs. Drain  
Figure 4. Diode Forward Voltage vs. Source  
Current  
Current and Gate Voltage  
105  
104  
103  
102  
101  
100  
101  
10  
8
Ciss=Cgs+Cgd(Cds=shorted)  
Coss=Cds+Cgd  
Crss=Cgd  
VGS=0V  
TJ=25°C  
f=250KHz  
ID=16.5A  
6
4
2
CISS  
COSS  
CRSS  
VDD=130V  
VDD=400V  
0
0
100  
200  
300  
400  
500  
600  
0
10  
20  
30  
40  
50  
60  
VDS, Drain to Source Voltage (V)  
QG, Gate Charge (nC)  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
www.onsemi.com  
3
NTMT080N60S5  
TYPICAL CHARACTERISTICS  
1.2  
1.15  
1.1  
3
V
=0V  
I =16.5A  
D
GS  
I =10mA  
V
=10V  
D
GS  
2.5  
2
1.05  
1
1.5  
1
0.95  
0.9  
0.5  
0.85  
0.8  
0
75 50 25  
0
25  
50  
75 100 125 150 175  
75 50 25  
0
25  
50  
75 100 125 150 175  
T , Junction Temperature (°C)  
T , Junction Temperature (°C)  
J
J
Figure 7. OnResistance Variation vs.  
Figure 8. Breakdown Voltage Variation vs.  
Temperature  
Temperature  
40  
35  
30  
25  
20  
15  
10  
5
0
25  
50  
75  
100  
125  
150  
V
, Drain to Source Voltage (V)  
T , Case Temperature (°C)  
DS  
C
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current vs. Case  
Temperature  
12  
10  
8
6
4
2
E
OSS  
0
0
100  
200  
300  
400  
500  
600  
V
, Drain to Source Voltage (V)  
DS  
Figure 11. Eoss vs. DraintoSource Voltage  
www.onsemi.com  
4
NTMT080N60S5  
TYPICAL CHARACTERISTICS  
1
D=0 is Single Pulse  
0.1  
0.01  
D=0.00  
D=0.01  
D=0.02  
D=0.05  
D=0.10  
D=0.20  
D=0.50  
Notes:  
Z
(t)=0.59 C/W Max  
JC =P  
xZ JC(t)+TC  
P
DM  
T
JM  
DM  
t 1  
Duty Cycle,D=t 1 /t 2  
t2  
0.001  
5  
4  
3  
1  
0
10  
10  
10  
10 2  
10  
10  
t, Rectangular Pulse Duration (s)  
Figure 12. Transient Thermal Impedance  
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
www.onsemi.com  
5
NTMT080N60S5  
PACKAGE DIMENSIONS  
TDFN4 8x8, 2P  
CASE 520AB  
ISSUE O  
www.onsemi.com  
6
NTMT080N60S5  
onsemi,  
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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