NTMT080N60S5 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 40 A, 80 mΩ, Power88;
| 型号： | NTMT080N60S5 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 40 A, 80 mΩ, Power88 |
| 文件： | 总7页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
EASY, PQFN88-4L
600 V, 80 mW, 40 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
80 mW @ V = 10 V
40 A
GS
N−CHANNEL MOSFET
D
NTMT080N60S5
Description
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies. The Power88 package
which is an ultraslim SMD package offers excellent switching
performance by providing kelvin source configuration and lower
parasitic source inductance.
G
S1: Driver Source
S2: Power Source
S1 S2
Features
650 V @ T = 150C
J
Typ. R
100% Avalanche Tested
= 64 mW
DS(on)
S2
S2
S1
G
TDFN4 8x8 2P
CASE 520AB
Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
Telecom / Server Power Supplies
EV Charger / UPS / Solar / Industrial Power Supplies
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
30
40
Unit
V
V
DSS
NTMT080
N60S5
AWLYWW
Gate−to−Source Voltage
DC
V
GS
V
AC (f > 1 Hz)
Continuous Drain Current
T
= 25C
= 100C
= 25C
= 25C
I
D
A
C
T
C
25
NTMT080N60S5 = Specific Device Code
Power Dissipation
T
T
P
D
212
116
116
W
A
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
C
Pulsed Drain Current (Note 1)
I
DM
C
Pulsed Source Current (Body
Diode) (Note 1)
I
A
SM
WW
= Work Week
Operating Junction and Storage Temperature T , T
−55 to
+150
C
J
STG
Range
ORDERING INFORMATION
Source Current (Body Diode)
I
S
40
A
†
Device
NTMT080N60S5
Package
Shipping
Single Pulse Avalanche
Energy
I = 5.8 A
G
E
287
mJ
L
AS
R
= 25 W
TDFN4
3000 / Tape &
Reel
Avalanche Current
I
AS
5.8
2.12
120
50
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8 from case for 10 seconds)
T
L
260
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I 16.5 A, di/dt 200 A/s, V 400 V, starting T = 25C.
SD
DD
J
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
November, 2022 − Rev. 0
NTMT080N60S5/D
NTMT080N60S5
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.59
45
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
2
mA
DSS
GSS
DS
J
I
V
= 30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 16.5 A, T = 25_C
−
2.4
−
64
−
80
4
mW
V
DS(on)
GS
D
J
V
= V , I = 3.4 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 16.5 A
28.8
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
3029
47.1
746
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr.)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
83.8
56.2
14.8
16.3
5.66
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 16.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
29.4
11.4
88.2
3.62
−
−
−
−
ns
d(on)
GS
D
DD
I
= 16.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 16.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 16.5 A,
338
5167
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMT080N60S5
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
1000
TJ=25°C
VDS=20V
100
10
VGS=4V
GS=4.5V
VGS=5V
V
V
V
GS=6V
GS=7V
TJ=−55°C
TJ=25°C
TJ=150°C
VGS=10V
1
0
5
10
15
20
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
160
140
120
100
80
1000
100
10
TJ=25°C
VGS=0V
60
40
1
TJ=150°C
TJ=25°C
TJ=−55°C
20
VGS=10V
VGS=20V
0
0.1
0
10
20
30
40
50
60
70
80
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD, Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
104
103
102
101
100
10−1
10
8
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
VGS=0V
TJ=25°C
f=250KHz
ID=16.5A
6
4
2
CISS
COSS
CRSS
VDD=130V
VDD=400V
0
0
100
200
300
400
500
600
0
10
20
30
40
50
60
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTMT080N60S5
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
V
=0V
I =16.5A
D
GS
I =10mA
V
=10V
D
GS
2.5
2
1.05
1
1.5
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
0
25
50
75 100 125 150 175
T , Junction Temperature (°C)
T , Junction Temperature (°C)
J
J
Figure 7. On−Resistance Variation vs.
Figure 8. Breakdown Voltage Variation vs.
Temperature
Temperature
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
V
, Drain to Source Voltage (V)
T , Case Temperature (°C)
DS
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
12
10
8
6
4
2
E
OSS
0
0
100
200
300
400
500
600
V
, Drain to Source Voltage (V)
DS
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTMT080N60S5
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
Z
(t)=0.59 C/W Max
JC =P
xZ JC(t)+TC
P
DM
T
JM
DM
t 1
Duty Cycle,D=t 1 /t 2
t2
0.001
−5
−4
−3
−1
0
10
10
10
10 −2
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Impedance
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
NTMT080N60S5
PACKAGE DIMENSIONS
TDFN4 8x8, 2P
CASE 520AB
ISSUE O
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6
NTMT080N60S5
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相关型号：
NTMT280N60S5Z
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, Power88
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