NTMT100N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 mΩ, Power88;
| 型号： | NTMT100N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 mΩ, Power88 |
| 文件： | 总9页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single,
N-Channel, SUPERFET),
FAST, PQFN4
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
100 mW @ 10 V
27 A
D
600 V, 100 mW, 27 A
NTMT100N60S5H
G
Description
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application. The Power88 package which is an ultraslim SMD
package offers excellent switching performance by providing kelvin
source configuration and lower parasitic source inductance.
S1: Driver Source
S2: Power Source
S1 S2
N−Channel MOSFET
G
Features
S1
S2
• 650 V @ T = 150°C
J
S2
• Typ. R
= 80 mW
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Power88
PQFN4 8x8, 2P
CASE 520AB
Applications
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
NTMT100
N60S5H
AWLYWW
V
DSS
600
30
V
V
Gate−to−Source Voltage
V
GS
DC
AC (f > 1 Hz)
30
Continuous Drain Current
I
A
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
27
D
NTMT100N60S5H = Specific Device Code
17
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Power Dissipation
P
179
95
W
A
D
Pulsed Drain Current (Note 1)
I
DM
WW
= Work Week
Pulsed Source Current
(Body Diode) (Note 1)
I
95
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Range
ORDERING INFORMATION
Source Current (Body Diode)
I
S
27
A
†
Device
Package
Shipping
Single Pulse Avalanche
Energy
I = 5.1 A,
G
E
230
mJ
L
AS
R
= 25 W
NTMT100N60S5H
PQFN4
3000 / Tape &
Reel
Avalanche Current
I
AS
5.1
1.79
120
20
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 13.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
August, 2022 − Rev. 0
NTMT100N60S5H/D
NTMT100N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.7
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
45
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
V
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
DSS
GSS
GS
DS
J
I
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
GS
V
GS
V
DS
= 10 V, I = 13.5 A, T = 25_C
−
2.7
−
80
−
100
4.3
−
mW
V
DS(on)
D
J
V
= V , I = 2.7 mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
= 20 V, I = 13.5 A
26.8
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2616
39.8
610
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr)
V
GS
V
DS
V
DD
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
= 0 V to 400 V, V = 0 V
−
−
−
−
−
66.2
46.6
12.7
12.1
1.16
−
−
−
−
−
OSS(er)
GS
Q
= 400 V, I = 13.5 A, V = 10 V
D GS
nC
G(TOT)
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
GS
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
D
= 0/10 V, V = 400 V,
−
−
−
−
21.6
5.81
61.1
2.64
−
−
−
−
ns
d(ON)
GS
DD
I
= 13.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
V
= 0 V, I = 13.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
GS
SD
J
t
= 0 V, I = 13.5 A,
362
5331
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTMT100N60S5H
TYPICAL CHARACTERISTICS
60
50
40
1000
V
GS
= 10 V
7.0 V
6.0 V
V
DS
= 20 V
T
C
= 25°C
100
T
= 25°C
C
30
20
10
0
5.0 V
10
1
T
C
= 150°C
4.5 V
4.0 V
T
C
= −55°C
0
5
10
15
20
3
0
0
4
5
6
7
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
200
150
100
1000
100
V
= 0 V
GS
T
= 25°C
C
T
= 25°C
C
10
V
V
= 10 V
= 20 V
GS
GS
1
50
0
T
C
= 150°C
T
= −55°C
C
0.1
0
10
20
30
40
50
60
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
V
, DIODE FORWARD VOLTAGE (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
5
4
3
2
10
10
10
10
10
V
= 0 V
f = 250 kHz
C
C
C
= C + C (C = shorted)
GS GD DS
GS
ISS
I
D
= 13.5 A
= C + C
OSS
RSS
DS
GD
V
DS
= 130 V
= C
GD
8
6
4
V
= 400 V
DS
C
ISS
C
OSS
RSS
1
10
10
C
2
0
0
−1
10
0
100
200
300
400
500
600
5
10 15 20 25 30
35 40 45 50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
NTMT100N60S5H
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 13.5 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
30
25
20
15
10
100
10
10 ms
100 ms
1 ms
Operation in this Area is
1
Limited by R
DS(on)
10 ms
DC
T
= 25°C
T = 150°C
Single Pulse
C
5
0
J
0.1
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
www.onsemi.com
4
NTMT100N60S5H
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Notes:
(t) = 0.7°C/W Max
D = 0.01
Z
q
JC
Single Pulse
Duty Cycle, D = t /t
1
2
T
JM
= P
x Z (t) + T
q
DM JC C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
www.onsemi.com
5
NTMT100N60S5H
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
6
NTMT100N60S5H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
www.onsemi.com
7
NTMT100N60S5H
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
www.onsemi.com
8
NTMT100N60S5H
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
NTMT280N60S5Z
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, Power88
ONSEMI
©2020 ICPDF网 联系我们和版权申明