NTMFS7D8N10GTWG [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ;
| 型号： | NTMFS7D8N10GTWG |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ 栅 |
| 文件： | 总8页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, PQFN8
100 V, 7.6 mW, 110 A
NTMFS7D8N10G
Features
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• Wide SOA for Linear Mode Operation
• Low R
to Minimize Conduction Loss
DS(on)
• High Peak UIS Current Capability for Ruggedness
• Small Footprint (5x6 mm) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
SSS
SS(ON)
100 V
7.6 mW @ 10 V
110 A
Typical Applications
N−Channel MOSFET
• 48 V Hot Swap System, Load Switch, Soft Start, E−Fuse
S
S
S
1
8
D
D
D
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
2
3
7
6
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
I
110
A
D
G
4
5
D
Current R
(Note 2)
q
JC
Steady
State
T
= 25°C
C
Power Dissipation
(Note 2)
P
187
14
W
A
D
R
q
JC
Continuous Drain
Current R
I
D
q
JA
Steady
State
(Note 1, 2)
T = 25°C
A
Power Dissipation
P
3
W
D
R
(Note 1, 2)
q
JA
Top
Bottom
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
1656
A
A
p
PQFN8 5x6
CASE 483AF
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
155
245
A
S
MARKING DIAGRAM
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 70 A, L = 0.1 mH)
AV
Lead Temperature Soldering Reflow for Sol-
T
260
°C
L
7D8N10
AYWZZ
dering Purposes (1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
7D8N10 = Specific Device Code
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2021 − Rev. 0
NTMFS7D8N10G/D
NTMFS7D8N10G
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
0.8
50
Unit
Junction−to−Case – Steady State
Junction−to−Ambient – Steady State
°C/W
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain*to*Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
100
V
(BR)DSS
GS
D
Drain*to*Source Breakdown Voltage
V
/ T
87.9
mV/°C
(BR)DSS
J
I
D
= 250 mA, ref to 25°C
Temperature Coefficient
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
100
100
Gate*to*Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
DS
= 0 V, V =
GS
20 V
nA
GSS
V
V
GS
= V , I = 254 mA
2.0
4.0
7.6
V
GS(TH)
DS
D
/
Negative Threshold Temperature
Coefficient
V
T
J
−9.4
mV/°C
GS(TH)
I
D
= 254 mA, ref to 25°C
Drain*to*Source On Resistance
Forward Transconductance
Gate−Resistance
R
V
GS
= 10 V, I = 48 A
5.6
37
mW
S
DS(on)
D
g
V
= 5 V, I = 48 A
FS
DS D
R
T = 25°C
A
0.33
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
6180
624.5
99
pF
nC
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 50 V
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
92
G(TOT)
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
35
GS
GD
GP
V
GS
= 10 V, V = 50 V, I = 48 A
DS D
26
V
6
V
SWITCHING CHARACTERISTICS (Note 3)
Turn*On Delay Time
t
t
32
24
51
14
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 48 A, R = 4.7 W
G
Turn*Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
0.84
0.73
42
V
T = 25°C
J
SD
J
V
= 0 V, I = 48 A
S
GS
T = 125°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
ns
nC
ns
RR
V
GS
= 0 V, dI /dt = 300 A/ms,
S
I
S
= 24 A
Q
177
33
RR
RR
t
V
= 0 V, dI /dt = 1000 A/ms,
S
GS
I
S
= 24 A
Q
411
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS7D8N10G
TYPICAL CHARACTERISTICS
200
200
180
160
140
120
100
80
9.0 V
15 V
12 V 10 V
V
= 9.5 V
T = −55°C
J
GS
180
160
140
120
100
80
8.5 V
8.0 V
T = 25°C
J
7.5 V
7.0 V
T = 125°C
J
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
60
40
20
0
60
40
20
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
10
8
T = 25°C
J
T = 25°C
D
J
I
= 48 A
30
25
20
V
GS
= 10 V
6
4
15
10
5
2
0
0
4
5
6
7
8
9
10
20 40
60
80
100 120 140 160 180 200
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100K
10K
1K
V
= 10 V
= 48 A
GS
I
D
T = 150°C
T = 125°C
J
J
100
10
T = 85°C
J
T = 25°C
J
1
0.1
0.6
0.4
0.01
0.001
−50 −25
0
25
50
75 100 125 150 175
5
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65 75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS7D8N10G
TYPICAL CHARACTERISTICS
10K
1K
10
C
9
8
7
ISS
C
OSS
Q
Q
GD
GS
6
5
4
3
C
RSS
100
10
1
V
= 0 V
V
DS
= 50 V
GS
2
T = 25°C
T = 25°C
J
J
1
0
f = 1 MHz
I
D
= 48 A
0
1
1
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
10 20
30 40 50 60 70 80
90 100
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
V
= 0 V
GS
100
10
T = 175°C
J
t
d(off)
t
d(on)
T = 150°C
J
t
r
T = 125°C
J
1
T = 25°C
J
1
V
V
= 10 V
= 50 V
GS
0.1
t
f
DS
I
D
= 48 A
T = −55°C
J
0.01
0.1
10
R , GATE RESISTANCE (W)
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
100 ms
T
= 100°C
10
J(initial)
T
= 25°C
C
1 ms
Single Pulse
≤ 10 V
V
GS
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms
0.1
1
0.000001
10
100
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS7D8N10G
TYPICAL CHARACTERISTICS
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Device Marking
7D8N10
Package
Shipping
NTMFS7D8N10G
PQFN8 5x6
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS7D8N10G
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AF
ISSUE O
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6
NTMFS7D8N10G
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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Phone: 011 421 33 790 2910
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