NTMFSC1D6N06CL [ONSEMI]
Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package;
| 型号： | NTMFSC1D6N06CL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package |
| 文件： | 总7页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power,
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
DUAL COOL) N-Channel,
DFN8 5x6
60 V, 1.5 mW, 235 A
1.5 mW @ 10 V
2.3 mW @ 4.5 V
60 V
235 A
N−Channel MOSFET
NTMFSC1D6N06CL
Features
• Advanced Dual−sided Cooled Packaging
• Ulra Low R
DS(on)
• MSL1 Robust Packaging Design
Typical Applications
• Orring FET/Load Switching
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
DFN8 5x6
CASE 506EG
Continuous Drain
Steady
State
T
C
= 25°C
I
D
235
A
Current R
(Note 2)
q
JC
Power Dissipation
(Note 2)
P
166
36
W
A
D
R
q
JC
MARKING DIAGRAM
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
3MAYWZ
(Notes 1, 2)
Power Dissipation
P
D
3.8
W
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
3M
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
A
Y
W
Z
Source Current (Body Diode)
I
S
164
451
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 17 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
300
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
q
JC
Junction−to−Top Source − Steady State
(Note 2)
R
1.4
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
39
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 5
NTMFSC1D6N06CL/D
NTMFSC1D6N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
12.7
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 250 mA, ref to 25°C
−5.8
1.25
1.65
2
mV/°C
mW
GS(TH)
J
D
R
V
GS
GS
= 10 V
= 4.5 V
I
= 50 A
= 50 A
1.5
2.3
DS(on)
D
D
V
I
Gate−Resistance
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 25 V
6660
3000
45
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 4.5 V, V = 30 V, I = 50 A
41
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Q
V
GS
= 10 V, V = 30 V, I = 50 A
91
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
17
GS
GD
GP
9
V
2.9
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 48 V,
14.5
55.6
47.5
14.1
ns
d(ON)
GS
D
DS
I
= 50 A, R = 1 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.78
0.66
76
1.2
V
SD
GS
J
I
= 50 A
T = 125°C
J
Reverse Recovery Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
RR
GS
S
I
S
= 50 A
Reverse Recovery Charge
Q
130
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSC1D6N06CL
TYPICAL CHARACTERISTICS
200
200
180
160
140
120
100
80
V
GS
= 10 V to 3.4 V
180
160
140
120
100
80
V
DS
≤ 10 V
3.2 V
3.0 V
2.8 V
T = 25°C
J
60
60
40
40
T = 125°C
J
20
0
20
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
T = 25°C
J
V
= 4.5 V
= 10 V
T = 25°C
D
GS
J
I
= 50 A
V
GS
0.7
0.6
0.5
1.2
1.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
10 30
50 70
90 110 130 150 170 190
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.2
1,000,000
100,000
10,000
1000
2.0
1.8
1.6
1.4
1.2
1.0
V
I
= 10 V
= 40 A
GS
T = 150°C
J
D
T = 125°C
J
T = 85°C
J
100
10
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFSC1D6N06CL
TYPICAL CHARACTERISTICS
10,000
1000
10
30
25
20
Q
T
C
ISS
8
6
4
C
OSS
RSS
100
15
10
Q
GD
Q
GS
V
= 48 V
DS
C
T = 25°C
10
1
J
V
= 0 V
GS
2
0
I
D
= 50 A
5
0
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80 90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
V
V
= 4.5 V
= 30 V
= 50 A
GS
DD
t
d(off)
I
D
t
f
t
r
10
t
d(on)
10
1
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
V
GS
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFSC1D6N06CL
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Device Marking
612LDC
Package
Shipping
NTMFSC1D6N06CL
DFN8 5x6
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
ON Semiconductor and
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© Semiconductor Components Industries, LLC, 2018
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