NTMFSC4D2N10MC [ONSEMI]
N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ;
| 型号： | NTMFSC4D2N10MC |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ |
| 文件： | 总7页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, DUAL COOL),
DFN8 5x6.15
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.3 mW @ 10 V
12 mW @ 6 V
100 V
116 A
100 V, 4.3 mW, 116 A
N−Channel MOSFET
NTMFSC4D2N10MC
S
S
S
1
8
D
D
D
Features
• Advanced Dual−Sided Cooled Packaging
2
3
7
6
• Ultra Low R
to Minimize Conduction Losses
• MSL1 Robust Packaging Design
DS(on)
• 175°C T Capable
J
G
4
5
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Orring FET/Load Switching
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
DFN8 5x6.15
CASE 506EG
Parameter
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
(BR)DSS
V
GS
V
MARKING DIAGRAM
Continuous Drain
Current R
I
116
A
D
q
JC
Steady
State
(Note 2)
3QAYWZ
T
= 25°C
C
Power Dissipation
P
122
W
A
D
R
(Note 2)
q
JC
Continuous Drain
Current R
I
D
29.6
q
JA
Steady
State
(Notes 1, 2)
T = 25°C
A
Power Dissipation
P
7.9
W
D
3Q
A
= Specific Device Code
= Plant Code
R
(Notes 1, 2)
q
JA
YW = Date Code
= Lot Code
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
900
A
A
p
Z
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
101
120
A
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 49 A, L = 0.1 mH)
AV
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
April, 2023 − Rev. 5
NTMFSC4D2N10MC/D
NTMFSC4D2N10MC
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
1.23
1.5
Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Top Source – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
°C/W
R
q
JC
R
q
JC
R
q
JA
19
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
8.5
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 100 V
DS
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
V
V
GS
= V , I = 250 mA
2.0
4.0
V
GS(TH)
DS
D
V
/ T
Negative Threshold Temperature
Coefficient
−9.4
mV/°C
GS(TH)
J
I
D
= 250 mA, ref to 25°C
R
Drain−to−Source On Resistance
V
= 10 V, I = 44 A
3.7
6.0
1.2
4.3
12
mW
W
DS(on)
GS
D
V
= 6 V, I = 22 A
D
GS
Gate−Resistance
R
T = 25°C
A
G
CHARGES & CAPACITANCES
Input Capacitance
C
2856
1670
29
pF
ISS
C
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
GS
Q
V
= 6 V, V = 50 V, I = 44 A
27
nC
G(TOT)
GS
DS
D
Q
Total Gate Charge
42
G(TOT)
Q
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
12
GS
V
GS
= 10 V, V = 50 V, I = 44 A
DS D
Q
12
GD
V
4.9
V
GP
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
d(ON)
12
18
30
5.2
ns
t
r
V
GS
= 10 V, V = 50 V,
DS
D G
t
I = 44 A, R = 2.5 W
Turn−Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
0.85
0.73
65.5
100
V
T = 25°C
J
SD
J
V
GS
= 0 V, I = 44 A
S
T = 125°C
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
= 44 A
S
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSC4D2N10MC
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
140
5.6 V
5.4 V
= 10 V to 7 V
V
DS
= 10 V
120
100
80
V
GS
5.2 V
5.0 V
60
40
20
0
4.8 V
4.6 V
T = 25°C
J
4.4 V
4.2 V
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8.0
7.0
6.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
T = 25°C
D
T = 25°C
J
J
I
= 44 A
V
GS
= 6 V
5.0
4.0
3.0
2.0
V
GS
= 10 V
65
4
5
6
7
8
9
10
0
25
45
85
105
125
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.2
1.E+05
1.E+04
V
= 10 V
= 44 A
GS
2.0
1.8
1.6
I
D
T = 150°C
J
T = 125°C
J
1.E+03
1.E+02
1.4
1.2
1.0
0.8
0.6
T = 85°C
J
1.E+01
1.E+00
−50 −25
0
25
50
75 100 125 150 175
5
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFSC4D2N10MC
TYPICAL CHARACTERISTICS
10,000
1000
10
C
ISS
9
8
7
6
5
4
3
2
C
OSS
Q
Q
GD
GS
100
10
1
C
RSS
V
= 0 V
V
I
= 50 V
= 44 A
GS
DS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
5
10
15
20
25
30
35
40
45
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
1000
V
V
= 10 V
= 50 V
= 44 A
V
= 0 V
GS
GS
DS
I
D
t
d(off)
t
f
100
10
1
t
r
t
d(on)
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.3
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
100
10 ms
0.5 ms
1 ms
100
10 ms
T
= 25°C
J(initial)
10
V
≤ 10 V
GS
T
= 100°C
J(initial)
Single Pulse
= 25°C
10
1
T
C
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFSC4D2N10MC
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
1
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Device Marking
3Q
Package
Shipping
NTMFSC4D2N10MC
DFN8 5x6.15
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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