NTMJS1D0N04CTWG [ONSEMI]
功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道;
| 型号： | NTMJS1D0N04CTWG |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道 |
| 文件： | 总7页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMJS1D0N04C
MOSFET – Power, Single,
N-Channel
40 V, 0.92 mW, 300 A
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• LFPAK−E Package, Industry Standard
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
40 V
0.92 mW @ 10 V
300 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (5−8)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
300
212
166
83
A
C
D
q
JC
G (4)
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
S (1,2,3)
N−CHANNEL MOSFET
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
46
q
JA
T = 100°C
A
32
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.9
1.9
900
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
D
D
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
1D0N04
C
AWLYW
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+ 175
LFPAK8
CASE 760AA
Source Current (Body Diode)
I
S
158
578
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
1
Energy (I
= 34 A)
L(pk)
S
S
S
G
Lead Temperature for Soldering Purposes
T
260
°C
L
1D0N04C = Specific Device Code
(1/8″ from case for 10 s)
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
36
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2019 − Rev. 0
NTMJS1D0N04C/D
NTMJS1D0N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
16
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 190 mA
2.5
3.5
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−7
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
0.76
190
0.92
DS(on)
g
FS
V
=15 V, I = 50 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6100
3400
70
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 32 V; I = 50 A
86
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
18
G(TH)
nC
V
Q
28
GS
GD
GP
V
GS
= 10 V, V = 32 V; I = 50 A
DS
D
Q
V
14
4.9
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
54
d(ON)
Rise Time
t
162
227
173
r
V
= 10 V, V = 32 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.8
0.65
91
1.2
J
V
S
= 0 V,
= 50 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
42
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
49
Reverse Recovery Charge
Q
159
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS1D0N04C
TYPICAL CHARACTERISTICS
300
10 V to 6.0 V
280
240
200
160
120
80
V
DS
= 10 V
250
200
150
100
4.8 V
5.2 V
4.4 V
T = 25°C
J
50
0
V
GS
= 4.0 V
40
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.00
0.95
T = 25°C
D
J
T = 25°C
J
I
= 50 A
0.90
0.85
0.80
0.75
0.70
0.65
0.60
V
GS
= 10 V
0.5
0
0.55
0.50
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E−03
1.E−04
1.E−05
V
I
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.E−06
1.E−07
1.0
0.8
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMJS1D0N04C
TYPICAL CHARACTERISTICS
1E+4
1E+3
10
9
8
7
C
ISS
C
OSS
6
5
4
3
Q
Q
GD
GS
1E+2
1E+1
C
V
DS
= 20 V
RSS
V
= 0 V
2
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Charge
100
1000
V
GS
= 0 V
t
t
d(off)
f
t
r
t
d(on)
100
10
10
V
= 10 V
= 20 V
= 50 A
T = 150°C
GS
J
V
DS
I
D
T = 125°C
T = 25°C T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
T
V
= 25°C
C
≤ 10 V
GS
0.01 ms
0.1 ms
1 ms
T
= 25°C
J(initial)
10 ms
dc
T
= 100°C
J(initial)
10
1
10
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
10
100
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMJS1D0N04C
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
2
NTMJS1D0N04C 650 mm , 2 oz., Cu Single Layer Pad
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS1D0N04CTWG
1D0N04
C
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
DATE 13 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
W
= Wafer Lot
= Year
= Work Week
XXXXXX
XXXXXX
AWLYW
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82475G
LFPAK8 5x6
PAGE 1 OF 1
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