NTMFS003P03P8ZT1G [ONSEMI]
MOSFET, Power -30V P-Channel, SO-8FL;
| 型号： | NTMFS003P03P8ZT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power -30V P-Channel, SO-8FL |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
P-Channel, SO8-FL
-30 V, 1.8 mW, -234 A
NTMFS003P03P8Z
Features
• Ultra Low R
to Improve System Efficiency
• Advanced Package Technology in 5x6mm for Space Saving and
DS(on)
www.onsemi.com
Excellent Thermal Conduction
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
I
D
(BR)DSS
DS(on)
1.8 mW @ −10 V
2.9 mW @ −4.5 V
−30 V
−234 A
Typical Applications
• Power Load Switch
S (1, 2, 3)
• Protection: Reverse Current, Over Voltage, and Reverse Negative
Voltage
• Battery Management
G (4)
P−Channel
MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−30
Unit
V
V
DSS
D (5, 6, 7, 8)
Gate−to−Source Voltage
V
"25
−234
−169
139
V
GS
MARKING
DIAGRAM
Continuous Drain
T
T
T
= 25°C
= 85°C
= 25°C
I
A
C
C
C
D
Current R
(Note 3)
q
JC
Steady
State
D
Power Dissipation R
(Note 3)
P
W
A
q
D
D
D
JC
S
S
S
G
D
D
1
03P3
AYWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Continuous Drain Cur-
rent R (Notes 1, 3)
T = 25°C
A
I
−35.7
−25.7
3.2
D
q
JA
Steady T = 85°C
A
D
State
Power Dissipation R
(Notes 1, 3)
T = 25°C
A
P
W
A
q
JA
A
Y
= Assembly Location
= Year
Continuous Drain Cur-
rent R (Notes 2, 3)
T = 25°C
A
I
−19.1
−13.8
0.9
D
W
ZZ
= Work Week
= Lot Traceability
q
JA
Steady T = 85°C
A
State
Power Dissipation R
(Notes 2, 3)
T = 25°C
A
P
W
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−604
A
A
p
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche
E
AS
168.4
mJ
†
Device
Package
Shipping
Energy (I = 58.04 A)
Lpk
NTMFS003P03P8ZT1G SO8−FL 1500 / Tape &
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
stg
(Pb−Free) Reel
+150
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using a minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2020 − Rev. 0
NTMFS003P03P8Z/D
NTMFS003P03P8Z
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
°C/W
°C/W
°C/W
Junction−to−Case − Steady State (Drain) (Note 1)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
q
JC
R
q
JA
R
q
JA
39
135
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = −250 mA
−30
V
mV/°C
mA
(BR)DSS
GS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
I
D
= −250 mA, ref to 25°C
−5
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
GS
= 0 V,
= −24 V
T = 25°C
J
−1.0
"10
DSS
GSS
V
DS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
DS
= 0 V, V = "25 V
mA
GS
V
V
GS
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = −250 mA, ref to 25°C
D
5.5
1.2
1.9
110
mV/°C
mW
GS(TH)
J
R
V
= −10 V, I = −23 A
1.8
2.9
DS(on)
GS
GS
D
V
= −4.5 V, I = −20 A
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −5 V, I = −20 A
S
D
C
12120
4020
4100
167
7
pF
iss
V
GS
= 0 V, V = −15 V,
DS
Output Capacitance
C
oss
f = 1.0 MHz
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= −4.5 V, V = −15 V,
DS
GS
I
= −23 A
D
Q
21
GS
Q
116
277
GD
V
GS
= −10 V, V = −15 V,
DS
G(TOT)
I
= −23 A
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
81
ns
ns
V
d(on)
t
r
440
180
400
V
= −4.5 V, V = −15 V,
DS
GS
I
= −23 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
28
d(on)
t
r
116
325
380
V
= −10 V, V = −15 V,
DS
GS
I
= −23 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
I
= 0 V,
T = 25°C
−0.75
−0.6
−1.3
SD
GS
J
= −23 A
S
T = 125°C
J
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2
NTMFS003P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Charge Time
t
70
43
ns
RR
t
t
a
V
GS
= 0 V, dl /dt = 100 A/ms,
s
I = −23 A
s
Discharge Time
28
b
Reverse Recovery Charge
Q
116
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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3
NTMFS003P03P8Z
TYPICAL CHARACTERISTICS
350
300
250
200
150
100
350
V
GS
= −10 V to −4.5 V
V
DS
= −5 V
300
250
200
150
100
−4.2 V
−4.0 V
−3.8 V
−3.6 V
−3.4 V
T = 25°C
J
−3.2 V
−3.0 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
2.8
2.4
2.0
1.6
1.2
0.8
T = 25°C
D
T = 25°C
J
J
I
= −23 A
V
= −4.5 V
= −10 V
GS
V
GS
0.5
0
0.4
0
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
45 50
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.5
100K
10K
1K
V
= −4.5 V
= −23 A
GS
T = 150°C
J
1.4
1.3
1.2
1.1
1.0
0.9
I
D
T = 125°C
J
T = 85°C
J
T = 25°C
J
100
0.8
0.7
0.6
10
1
−50 −25
0
25
50
75
100 125
150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS003P03P8Z
TYPICAL CHARACTERISTICS
100K
10K
10
V
= −10 V
DS
9
8
7
6
5
4
3
T = 25°C
J
I
D
= −23 A
C
ISS
C
C
RSS
OSS
Q
GS
Q
GD
1K
V
= 0 V
GS
2
1
0
T = 25°C
J
f = 1 MHz
100
0
5
10
15
20
25
30
0
50
100
150
200
250
300
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
10K
1K
V
GS
= 0 V
t
t
f
d(off)
100
t
r
1
t
d(on)
10
1
V
V
= −10 V
= −15 V
GS
DS
I
= −23 A
D
T = 125°C
T = 25°C T = −55°C
J
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
500 ms
J(initial)
10
1 ms
10 ms
T
= 100°C
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.00001 0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTMFS003P03P8Z
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
NTMFS003P03P8Z
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
RECOMMENDED
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
0.495
4.560
5. DRAIN
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
2X
0.475
L
1
4
3.200
K
4.530
E2
1.330
2X
0.905
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
D2
BOTTOM VIEW
G
4X
1.000
4X
1.270
PITCH
DIMENSIONS: MILLIMETERS
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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