NTMFS008N12MCT1G [ONSEMI]
Single N-Channel Power MOSFET 120V, 79A, 8mΩ;
| 型号： | NTMFS008N12MCT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 120V, 79A, 8mΩ |
| 文件： | 总7页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
120 V, 8.0 mW, 79 A
NTMFS008N12MC
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• Soft Body Diode Reduces Voltage Ringing
• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
8.0 mW @ 10 V
20 mW @ 6 V
Typical Applications
120 V
79 A
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
D (5)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
120
20
Unit
V
G (4)
V
DSS
Gate−to−Source Voltage
V
GS
V
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
79
A
C
D
D
Steady
State
q
JC
T
C
I
50
102
40
(Notes 1, 3)
Power Dissipation
T
C
P
P
I
W
A
D
Steady
State
R
(Note 1)
MARKING DIAGRAM
q
JC
T
C
= 100°C
D
D
Continuous Drain Cur-
rent R
T = 25°C
A
12
S
S
S
G
D
D
D
Steady
State
1
q
JA
08N12C
AYWZZ
T = 100°C
A
I
D
8
(Notes 1, 2, 3)
SO−8
FLAT LEAD
CASE 488AA
Power Dissipation
T = 25°C
A
P
P
2.7
1.1
352
W
D
Steady
State
R
(Notes 1, 2)
q
D
JA
T = 100°C
A
D
08N12C = Specific Device Code
Pulsed Drain Current
T = 25°C, t = 100 ms
I
DM
A
A
p
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
85
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
101
mJ
Energy (I = 45 A, L = 0.1 mH)
AV
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.22
45
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2021 − Rev. 0
NTMFS008N12MC/D
NTMFS008N12MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
120
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
30
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1
mA
DSS
GS
J
V
= 120 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 200 mA
2.0
4.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 200 mA, ref to 25°C
D
−10
6.5
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V, I = 36 A
8.0
20
DS(on)
D
V
= 6 V, I = 18 A
11.5
111
GS
DS
D
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
g
FS
V
= 15 V, I = 36 A
S
D
C
V
= 0 V, f = 1 MHz, V = 60 V
2705
1150
4.9
33
pF
ISS
GS
DS
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 60 V, I = 36 A
nC
G(TOT)
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Threshold Gate Charge
Plateau Voltage
Q
Q
V
= 6 V, V = 60 V, I = 36 A
14
GS
GS
DS
D
6.0
8.0
5.5
98
GD
Q
G(TH)
V
GP
V
Output Charge
Q
V
GS
= 0 V, f = 1 MHz, V = 60 V
nC
OSS
DS
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
V
= 10 V, V = 60 V,
18.4
4.0
ns
d(ON)
GS
D
DS
I
= 36 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
22.8
4.6
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.9
0.8
50
1.2
V
SD
GS
J
I
= 36 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
= 0 V, dI /dt = 300 A/ms,
ns
ns
ns
nC
ns
ns
ns
nC
RR
GS
S
I
S
= 36 A
T
25
a
Discharge Time
T
26
b
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Q
165
34
RR
RR
t
V
= 0 V, dI /dt = 1000 A/ms,
GS S
I
S
= 36 A
T
26
a
Discharge Time
T
8
b
Reverse Recovery Charge
Q
372
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS008N12MC
TYPICAL CHARACTERISTICS
150
120
90
150
6.5 V
V
DS
= 5 V
120
90
V
GS
= 10 V to 7.0 V
6.0 V
60
60
5.5 V
4.8 V
T = 25°C
J
30
0
30
0
4.5 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
28
24
20
16
12
T = 25°C
J
T = 25°C
D
J
I
= 36 A
V
GS
= 6 V
8
4
V
GS
= 10 V
20
10
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
, GATE−TO−SOURCE VOLTAGE (V)
0
40
60
80
100
120
140
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1E−04
1E−05
1E−06
1E−07
1E−08
V
GS
= 0 V
2.0
V
= 10 V
= 36 A
GS
T = 150°C
J
I
D
1.8
1.6
1.4
1.2
1.0
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E−09
1E−10
1E−11
0.8
0.6
−50 −25
0
25
50
75
100
125 150
0
20
40
60
80
100
120
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS008N12MC
TYPICAL CHARACTERISTICS
10K
1K
10
C
Q
9
8
7
6
5
4
3
2
ISS
G(TOT)
Q
Q
GD
GS
C
OSS
100
10
1
C
RSS
V
I
= 60 V
= 36 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0.1
1
10
100
0
5
10
15
20
25
30
35
1.2
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
= 0 V
GS
100
10
1
t
d(off)
t
d(on)
10
1
0.1
t
f
t
r
V
V
= 10 V
= 60 V
= 46 A
GS
0.01
DS
I
D
T = 125°C T = 25°C
T = −55°C
J
J
J
0.001
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (W)
G
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10 ms
100
T
= 25°C
100 ms
J(initial)
T
C
= 25°C
10
1
T
= 100°C
Single Pulse
≤ 10 V
J(initial)
V
GS
1
500 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms
&1 S
0.1
0.1
1
10
100
0.000001
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS008N12MC
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
0.01
1%
Single Pulse
0.000001 0.00001
0.001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
DFN5
Shipping
NTMFS008N12MCT1G
08N12C
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS008N12MC
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
0.495
4.560
8X b
A B
2X
0.10
0.05
C
c
e/2
e
1.530
L
2X
0.475
1
4
K
3.200
1.330
4.530
E2
PIN 5
(EXPOSED PAD)
M
L1
2X
0.905
1
D2
G
0.965
4X
1.000
BOTTOM VIEW
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
5. DRAIN
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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