NTMFS006N08MC [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ;
| 型号： | NTMFS006N08MC |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ 栅 |
| 文件： | 总8页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, PQFN8
80 V, 32 A
NTMFS006N08MC
Features
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• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low R
to Improve System Efficiency
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Compliant
80 V
6.0 mW @ 10 V
17 mW @ 6 V
32 A
16 A
Applications
80 V
• Hot Swap Application
• Power Load Switch
• Battery Management and Protection
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Symbol
Value
Unit
V
G (4)
V
DSS
80
20
82
59
78
V
GS
V
T
= 25°C
=85°C
= 25°C
I
D
A
S (1,2,3)
N−CHANNEL MOSFET
C
Current R
(Note 3)
q
JC
T
Steady
State
C
C
Power Dissipation
(Note 3)
T
P
W
A
D
D
D
R
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
14.7
10.6
2.5
MARKING
DIAGRAMS
D
q
JA
T = 85°C
A
(Notes 1, 3)
Power Dissipation
T = 25°C
A
P
W
A
S
S
S
D
D
R
(Notes 1, 3)
PQFN8
T1 SUFFIX
CASE 483AE
q
JA
Steady
State
06N08
AYWZZ
Continuous Drain
Current R
(Notes 2, 3)
T = 25°C
A
I
D
9.3
6.7
1.0
q
JA
G
T = 85°C
A
1
D
Power Dissipation
T = 25°C
A
P
W
R
(Notes 2, 3)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
q
JA
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
216
51
A
A
p
Single Pulse Drain−to−Source Avalanche
Energy (I = 32 A
E
AS
mJ
)
pk
L
Operating Junction and Storage
Temperature Range
T ,
STG
−55 to
°C
°C
J
T
+150
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 1
NTMFS006N08MC/D
NTMFS006N08MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.61
50
Unit
Junction−to−Case – Steady State
Junction−to−Ambient – Steady State (Note 4)
R
q
JC
R
°C/W
q
JA
Junction−to−Ambient – Steady State (Note 5)
R
125
q
JA
2
4. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
5. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA. ref to 25°C
96.6
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 64 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.0
4.0
V
mV/°C
mW
mW
W
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Gate Resistance
V
/T
J
I
= 200 mA. ref to 25°C
−5
4.9
GS(TH)
D
R
R
V
GS
= 10 V
= 6 V
I
= 32 A
= 16 A
6.0
17
DS(on)
DS(on)
D
D
V
I
10.2
0.3
GS
R
T = 25°C
A
G
CHARGES AND CAPACITANCES
Input Capacitance
C
2300
710
31
ISS
Output Capacitance
C
V
GS
= 0 V, V = 40 V, f = 1 MHz
pF
nC
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
30
G(TOT)
Threshold Gate Charge
Q
3.3
10
G(TH)
V
GS
= 10 V, V = 40 V; I = 32 A
DS D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
GS
Q
6.0
GD
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
t
13
4
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
V
I
= 32 A, R = 2.5 W
G
Turn−Off Delay Time
t
18
4
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.84
0.78
1.2
J
V
S
= 0 V,
GS
I
= 32 A
T = 125°C
J
Reverse Recovery Time
t
49.58
51.4
ns
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
= 32 A
S
Reverse Recovery Charge
Q
nC
RR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS006N08MC
TYPICAL CHARACTERISTICS
150
140
130
120
110
100
90
140
7.0 V
V
GS
= 10 V
V
DS
= 10 V
120
100
80
8.0 V
6.0 V
80
70
60
50
40
5.5 V
5.0 V
60
T = 25°C
J
40
30
20
0
20
10
0
T = 150°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
14
12
10
8
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
I
= 32 A
V
= 6 V
GS
6
V
GS
= 10 V
4
6
2
0
4
2
5.2 5.4 5.6 5.8
6.0 6.2 6.4 6.6
6.8 7.0
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100K
10K
1K
2.0
V
= 10 V
= 32 A
GS
1.8
1.6
1.4
1.2
1.0
0.8
I
D
T = 150°C
J
T = 125°C
J
100
10
T = 85°C
J
1
T = 25°C
J
0.1
0.6
0.4
0.01
−50 −25
0
25
50
75
100
125
150
5
15
25
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS006N08MC
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
9
8
7
6
C
OSS
Q
Q
GD
GS
100
5
4
C
RSS
3
2
1
0
10
1
V
= 0 V
V
I
= 40 V
= 32 A
GS
DS
T = 25°C
J
D
f = 1 MHz
T = 25°C
J
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
V = 0 V
GS
V
V
= 10 V
= 15 V
= 32 A
GS
DS
I
D
100
t
t
d(off)
t
r
T = 150°C
J
T = 25°C
J
T = −55°C
J
10
1
1
d(on)
t
f
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
1 ms
10
10 ms
T
C
= 25°C
Single Pulse
T = Max Rated
T
= 100°C
J(initial)
1 s
J
1
R
= 1.61°C/W
q
JC
R
Limit
DS(on)
0.1
1
0.1
1
10
100
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS006N08MC
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS006N08MC
06N08
PQFN8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS006N08MC
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
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6
NTMFS006N08MC
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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