NSBC144WDXV6T1G [ONSEMI]
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL;
| 型号： | NSBC144WDXV6T1G |
| 厂家： | 
ONSEMI |
| 描述： | Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总9页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSBC114EDXV6T1,
NSBC114EDXV6T5
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
http://onsemi.com
(3)
(2)
(1)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
NSBC114EDXV6T1
Features
MARKING
DIAGRAM
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Lead−Free Solder Plating
• These are Pb−Free Devices
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SOT−563
CASE 463A
xx M G
1
1
xx = Device Code (Refer to Page 2)
M
G
= Date Code
= Pb−Free Package
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
ORDERING INFORMATION
1
2
†
Device
Package
Shipping
Rating
Symbol
Value
Unit
Vdc
NSBC1xxxDXV6T1
SOT−563 4000/Tape & Reel
Collector-Base Voltage
V
50
50
CBO
CEO
NSBC1xxxDXV6T1G SOT−563 4000/Tape & Reel
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel
Collector-Emitter Voltage
Collector Current
V
Vdc
I
C
100
mAdc
THERMAL CHARACTERISTICS
NSBC1xxxDXV6T5
SOT−563 8000/Tape & Reel
Characteristic
(One Junction Heated)
NSBC1xxxDXV6T5G SOT−563 8000/Tape & Reel
Symbol
Max
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Total Device Dissipation; T = 25°C
P
357 (Note 1)
2.9 (Note 1)
mW
A
D
Derate above 25°C
mW/°C
Thermal Resistance, Junction-to-Ambient
R
350 (Note 1)
°C/W
q
JA
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Total Device Dissipation; T = 25°C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
R
250 (Note 1)
°C/W
°C
q
JA
Junction and Storage Temperature
Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 7
NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device†
Package*
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
7A
R1 (kW)
10
R2 (kW)
10
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
7B
22
22
7C
47
47
NSBC114YDXV6T1
7D
10
47
NSBC114TDXV6T1 (Note 2)
NSBC143TDXV6T1 (Notes 2)
NSBC113EDXV6T1 (Note 2)
NSBC123EDXV6T1 (Notes 2)
NSBC143EDXV6T1 (Notes 2)
NSBC143ZDXV6T1 (Notes 2)
NSBC124XDXV6T1 (Notes 2)
NSBC123JDXV6T1 (Note 2)
NSBC115EDXV6T1 (Notes 2)
NSBC144WDXV6T1 (Notes 2)
7E
10
∞
7F
4.7
1.0
2.2
4.7
4.7
22
∞
7G
7H
1.0
2.2
4.7
47
7J
7K
7L
47
7M
7N
2.2
100
47
47
100
22
7P
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
NSBC114EDXV6T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
EBO
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
EB
C
0.1
0.2
NSBC114TDXV6T1
0.9
NSBC143TDXV6T1
1.9
NSBC113EDXV6T1
4.3
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
2.3
1.5
0.18
0.13
0.2
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
0.05
0.13
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3) (I = 2.0 mA, I = 0)
C
B
(BR)CEO
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
2
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
NSBC114EDXV6T1
h
FE
35
60
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
100
140
140
350
350
5.0
CE
C
80
80
NSBC114TDXV6T1
160
160
3.0
8.0
15
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
15
30
200
150
140
150
140
80
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
80
80
80
80
Collector-Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
−
−
0.25
Vdc
Vdc
CE(sat)
C
B
(I = 10 mA, I = 5 mA)
NSBC113EDXV6T1/NSBC123EDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
C
B
(I = 10 mA, I = 1 mA)
C
B
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC114YDXV6T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
NSBC144EDXV6T1
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
NSBC115EDXV6T1
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
NSBC144WDXV6T1
CC
B
L
Output Voltage (off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
NSBC113EDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
CC
B
L
Input Resistor
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
R1
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
k W
47
NSBC114YDXV6T1
10
10
NSBC114TDXV6T1
7.0
13
NSBC143TDXV6T1
3.3
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
6.1
NSBC113EDXV6T1
0.7
1.3
NSBC123EDXV6T1
1.5
2.9
NSBC143EDXV6T1
3.3
6.1
NSBC143ZDXV6T1
3.3
6.1
NSBC124XDXV6T1
15.4
1.54
70
28.6
2.86
130
61.1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
32.9
Resistor Ratio
NSBC114EDXV6T1/NSBC124EDXV6T1/NSVBC124EDXV6T1G
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
R1/R2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
1.2
0.25
−
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
0.8
1.2
0.055
0.38
0.038 0.047 0.056
1.7 2.1 2.6
0.185
0.56
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
NSBC114EDXV6T1, NSBC114EDXV6T5
300
250
200
150
100
R
= 833°C/W
50
0
q
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
4
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1
1
1000
I /I = 10
C B
V
CE
= 10 V
T ꢀ=ꢀ-25°C
A
25°C
T ꢀ=ꢀ75°C
A
25°C
-25°C
0.1
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ-25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V = 5 V
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 / NSVBC124EDXV6T1G
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
25°C
T ꢀ=ꢀ-25°C
A
0.1
-25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
T ꢀ=ꢀ-25°C
A
I = 0 V
E
T = 25°C
A
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
-25°C
25°C
100
T ꢀ=ꢀ-25°C
A
75°C
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
75°C
I = 0 V
E
T ꢀ=ꢀ-25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1
1
300
T ꢀ=ꢀ75°C
A
V
CE
= 10
I /I = 10
C B
T ꢀ=ꢀ-25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
-25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
T ꢀ=ꢀ75°C
25°C
A
l = 0 V
E
T = 25°C
A
-25°C
2.5
2
1.5
1
V = 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
NSBC114EDXV6T1, NSBC114EDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
D
−X−
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
6
5
2
4
3
E
−Y−
H
E
MILLIMETERS
DIM MIN NOM MAX
INCHES
MIN
NOM MAX
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NSBC114EDXV6/D
相关型号：
©2020 ICPDF网 联系我们和版权申明