NLU1GT04_16 [ONSEMI]

Single Inverter, TTL Level;
NLU1GT04_16
型号: NLU1GT04_16
厂家: ONSEMI    ONSEMI
描述:

Single Inverter, TTL Level

文件: 总6页 (文件大小:70K)
中文:  中文翻译
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NLU1GT04  
Single Inverter, TTL Level  
LSTTL−Compatible Inputs  
The NLU1GT04 MiniGatet is an advanced CMOS high−speed  
inverting buffer in ultra−small footprint.  
The device input is compatible with TTL−type input thresholds and  
the output has a full 5.0 V CMOS level output swing.  
The NLU1GT04 input and output structures provide protection  
when voltages up to 7 V are applied, regardless of the supply voltage.  
www.onsemi.com  
MARKING  
DIAGRAMS  
Features  
UDFN6  
MU SUFFIX  
CASE 517AA  
High Speed: t = 3.8 ns (Typ) @ V = 5.0 V  
PD  
CC  
M
Low Power Dissipation: I = 1 mA (Max) at T = 25°C  
CC  
A
1
TTL−Compatible Input: V = 0.8 V; V = 2.0 V  
IL  
IH  
CMOS−Compatible Output:  
V
OH  
> 0.8 V ; V < 0.1 V @ Load  
UDFN6  
MU SUFFIX  
CASE 517AQ  
CC  
OL  
CC  
PM  
Power Down Protection Provided on inputs  
Balanced Propagation Delays  
1
Ultra−Small Packages  
N or P = Device Marking  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
M
= Date Code  
Compliant  
PIN ASSIGNMENT  
1
NC  
IN A  
GND  
NC  
IN A  
GND  
1
2
3
6
5
V
CC  
2
3
4
5
6
OUT Y  
NC  
NC  
V
CC  
4
OUT Y  
FUNCTION TABLE  
A
Y
L
H
H
L
Figure 1. Pinout (Top View)  
1
IN A  
OUT Y  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
Figure 2. Logic Symbol  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2016 − Rev. 3  
NLU1GT04/D  
NLU1GT04  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
−0.5 to +7.0  
V
IN  
DC Input Voltage  
−0.5 to +7.0  
V
V
OUT  
DC Output Voltage  
−0.5 to +7.0  
V
I
DC Input Diode Current  
V
< GND  
< GND  
OUT  
−20  
mA  
mA  
mA  
mA  
mA  
°C  
IK  
IN  
I
DC Output Diode Current  
V
20  
OK  
I
DC Output Source/Sink Current  
DC Supply Current Per Supply Pin  
DC Ground Current per Ground Pin  
Storage Temperature Range  
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
Moisture Sensitivity  
12.5  
O
I
25  
CC  
I
25  
−65 to +150  
260  
GND  
T
STG  
T
°C  
L
T
150  
°C  
J
MSL  
Level 1  
F
R
Flammability Rating Oxygen  
Index: 28 to 34  
UL 94 V−0 @ 0.125 in  
V
ESD  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
> 2000  
> 200  
N/A  
V
I
Latchup Performance Above V and Below GND at 125 °C (Note 5)  
500  
mA  
LATCHUP  
CC  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.  
2. Tested to EIA / JESD22−A114−A.  
3. Tested to EIA / JESD22−A115−A.  
4. Tested to JESD22−C101−A.  
5. Tested to EIA / JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
0
Max  
5.5  
Unit  
V
V
CC  
Positive DC Supply Voltage  
Digital Input Voltage  
V
IN  
5.5  
V
V
OUT  
Output Voltage  
0
5.5  
V
T
Operating Free−Air Temperature  
Input Transition Rise or Fall Rate  
−55  
+125  
°C  
ns/V  
A
Dt/DV  
V
CC  
V
CC  
= 3.3 V 0.3 V  
= 5.0 V 0.5 V  
0
0
100  
20  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
 
NLU1GT04  
DC ELECTRICAL CHARACTERISTICS  
T
= −555C  
A
to +1255C  
T
A
= 25 5C  
Typ  
T
= +855C  
A
V
CC  
(V)  
1.8  
3.0  
Min  
1.2  
1.4  
2.0  
Max  
Min  
1.2  
1.4  
2.0  
Max  
Min  
1.2  
1.4  
2.0  
Max  
Symbol  
Parameter  
Conditions  
Unit  
V
IH  
Low−Level Input Voltage  
V
4.5 to  
5.5  
V
Low−Level Input Voltage  
1.8  
3.0  
0.3  
0.53  
0.8  
0.3  
0.53  
0.8  
0.3  
0.53  
0.8  
V
V
IL  
4.5 to  
5.5  
V
OH  
High−Level  
V
= V or V  
= −50 mA  
3.0  
4.5  
2.9  
4.4  
3.0  
4.5  
2.9  
4.4  
2.9  
4.4  
IN  
IH  
IL  
I
OH  
Output Voltage  
V
= V or V  
IN  
OH  
OH  
OH  
IH  
IL  
I
I
I
= −2 mA  
= −4 mA  
= −8 mA  
1.8  
3.0  
4.5  
1.40  
2.58  
3.94  
1.38  
2.48  
3.80  
1.37  
2.34  
3.66  
V
OL  
Low−Level Output  
Voltage  
V
= V or V  
= 50 mA  
3.0  
4.5  
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN  
IH  
IL  
I
OL  
V
= V or V  
IN  
OL  
OL  
OL  
IH  
IL  
I
I
I
= 2 mA  
= 4 mA  
= 8 mA  
1.8  
3.0  
4.5  
0.36  
0.36  
0.36  
0.44  
0.44  
0.44  
0.52  
0.52  
0.52  
I
Input Leakage Current  
0 v V v 5.5 V  
0 to  
5.5  
0.1  
1.0  
1.0  
mA  
mA  
mA  
mA  
IN  
IN  
I
Quiescent Supply  
Current  
0 v V v V  
5.5  
5.5  
0.0  
1.0  
20  
40  
CC  
IN  
CC  
I
Quiescent Supply  
Current  
V = 3.4 V  
IN  
1.35  
0.5  
1.50  
5.0  
1.65  
10  
CCT  
I
Output Leakage Current  
V = 5.5 V  
OUT  
OPD  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
T
A
= −555C to  
+1255C  
T
A
= 25 5C  
Typ  
5.0  
T
= +855C  
A
V
(V)  
Test  
Condition  
CC  
Min  
Max  
10.0  
13.5  
6.7  
Min  
Max  
Min  
Max  
13.0  
17.5  
8.5  
Symbol  
Parameter  
Unit  
t
,
Propagation De-  
lay, Input A to  
Output Y  
3.0 to  
3.6  
C = 15 pF  
L
11.0  
15.0  
7.5  
ns  
PLH  
t
PHL  
C = 50 pF  
L
6.2  
4.5 to  
5.5  
C = 15 pF  
L
3.8  
C = 50 pF  
L
4.2  
7.7  
8.5  
9.5  
C
Input Capacitance  
5
10  
10  
10.0  
pF  
pF  
IN  
C
Power Dissipation  
Capacitance  
(Note 6)  
5.0  
10  
PD  
6. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without  
PD  
load. Average operating current can be obtained by the equation I  
dynamic power consumption: P = C V  
= C V f + I . C is used to determine the no−load  
CC(OPR)  
PD CC in CC PD  
2
f + I V  
D
PD  
CC  
in CC CC.  
www.onsemi.com  
3
 
NLU1GT04  
V
CC  
A or B  
50%  
GND  
t
PLH  
t
PHL  
Y
50% V  
CC  
Figure 3. Switching Waveforms  
OUTPUT  
INPUT  
C
L*  
*Includes all probe and jig capacitance.  
A 1−MHz square input wave is recommended for propagation delay tests.  
Figure 4. Test Circuit  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NLU1GT04MUTCG  
UDFN6  
(Pb−Free)  
3000 / Tape & Reel  
3000 / Tape & Reel  
NLU1GT04AMUTCG  
UDFN6  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
4
NLU1GT04  
PACKAGE DIMENSIONS  
UDFN6, 1.2x1.0, 0.4P  
CASE 517AA  
ISSUE D  
EDGE OF PACKAGE  
NOTES:  
A
B
D
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.25 AND  
0.30 mm FROM TERMINAL.  
L1  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
PIN ONE  
REFERENCE  
E
DETAIL A  
Bottom View  
MILLIMETERS  
2X  
DIM MIN  
0.45  
A1 0.00  
MAX  
0.55  
0.05  
(Optional)  
A
0.10  
C
MOLD CMPD  
EXPOSED Cu  
TOP VIEW  
A3  
b
0.127 REF  
0.15  
2X  
0.25  
0.10  
C
C
D
E
e
1.20 BSC  
1.00 BSC  
0.40 BSC  
A3  
L
0.30  
0.40  
0.15  
0.50  
(A3)  
L1 0.00  
L2 0.40  
0.10  
0.08  
A1  
DETAIL B  
Side View  
(Optional)  
A
MOUNTING FOOTPRINT*  
SEATING  
PLANE  
10X  
C
6X  
0.42  
SIDE VIEW  
6X  
0.22  
C
A1  
5X L  
3
1
L2  
6X b  
0.40  
PITCH  
6
4
1.07  
0.10  
0.05  
C
A B  
e
C
DIMENSIONS: MILLIMETERS  
NOTE 3  
BOTTOM VIEW  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
5
NLU1GT04  
PACKAGE DIMENSIONS  
UDFN6, 1.45x1.0, 0.5P  
CASE 517AQ  
ISSUE O  
A
B
D
L
L
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.15 AND  
0.30 mm FROM THE TERMINAL TIP.  
L1  
DETAIL A  
PIN ONE  
REFERENCE  
OPTIONAL  
E
MILLIMETERS  
CONSTRUCTIONS  
DIM MIN  
0.45  
A1 0.00  
MAX  
0.55  
0.05  
A
0.10  
C
EXPOSED Cu  
MOLD CMPD  
A2  
b
0.07 REF  
0.20  
TOP VIEW  
0.30  
0.10  
C
D
1.45 BSC  
E
e
1.00 BSC  
0.50 BSC  
DETAIL B  
L
L1  
0.30  
−−−  
0.40  
0.15  
DETAIL B  
OPTIONAL  
0.05  
0.05  
C
C
CONSTRUCTIONS  
A
MOUNTING FOOTPRINT  
6X  
A1  
6X  
0.30  
SEATING  
PLANE  
A2  
C
SIDE VIEW  
e
PACKAGE  
OUTLINE  
6X L  
1.24  
3
1
DETAIL A  
6X  
0.53  
1
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
6
4
6X b  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
0.10  
C A B  
NOTE 3  
0.05  
C
BOTTOM VIEW  
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NLU1GT04/D  

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