NLU1GT125CMUTCG [ONSEMI]
Non-Inverting 3-State Buffer, TTL Level;
| 型号： | NLU1GT125CMUTCG |
| 厂家： | 
ONSEMI |
| 描述： | Non-Inverting 3-State Buffer, TTL Level |
| 文件： | 总7页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NLU1GT125
Non-Inverting 3-State
Buffer, TTL Level
LSTTL−Compatible Inputs
The NLU1GT125 MiniGatet is an advanced CMOS high−speed
non−inverting buffer in ultra−small footprint.
The NLU1GT125 requires the 3−state control input OE to be set
High to place the output in the high impedance state.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
www.onsemi.com
MARKING
DIAGRAMS
The NLU1GT125 input and output structures provide protection
when voltages up to 7.0 V are applied, regardless of the supply voltage.
UDFN6
1.2 x 1.0
CASE 517AA
7M
Features
1
• High Speed: t = 3.8 ns (Typ) @ V = 5.0 V
PD
CC
• Low Power Dissipation: I = 1 mA (Max) at T = 25°C
CC
A
UDFN6
1.0 x 1.0
CASE 517BX
• TTL−Compatible Input: V = 0.8 V; V = 2.0 V
IL
IH
L M
• CMOS−Compatible Output:
V
OH
> 0.8 V ; V < 0.1 V @ Load
CC OL CC
1
• Power Down Protection Provided on inputs
• Balanced Propagation Delays
• Ultra−Small Packages
UDFN6
1.45 x 1.0
CASE 517AQ
D M
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These are Pb−Free Devices
1
7
M
= Device Marking
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
OE
IN A
GND
1
2
3
6
5
V
CC
NC
4
OUT Y
Figure 1. Pinout (Top View)
OE
IN A
OUT Y
Figure 2. Logic Symbol
FUNCTION TABLE
PIN ASSIGNMENT
1
2
3
4
5
6
OE
IN A
Input
Output
Y
GND
OUT Y
NC
A
OE
L
H
X
L
L
H
L
H
Z
V
CC
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 6
NLU1GT125/D
NLU1GT125
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply Voltage
−0.5 to +7.0
V
IN
DC Input Voltage
−0.5 to +7.0
V
V
OUT
DC Output Voltage
−0.5 to +7.0
V
I
DC Input Diode Current
V
< GND
< GND
OUT
−20
mA
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
20
OK
I
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
12.5
O
I
25
CC
I
25
GND
T
−65 to +150
STG
T
260
°C
L
T
150
Level 1
°C
J
MSL
F
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
500
R
I
Latchup Performance Above V and Below GND at 125°C (Note 2)
mA
LATCHUP
CC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
Digital Input Voltage
V
IN
5.5
V
V
OUT
Output Voltage
0
5.5
V
T
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
−55
+125
°C
ns/V
A
Dt/DV
V
CC
V
CC
= 3.3 V 0.3 V
= 5.0 V 0.5 V
0
0
100
20
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2
NLU1GT125
DC ELECTRICAL CHARACTERISTICS
T
= −555C
A
to +1255C
T
A
= 25 5C
Typ
T
= +855C
A
Min
Max
Min
Max
Min
Max
Symbol
Parameter
Conditions
V
CC
(V)
Unit
V
IH
Low−Level Input
Voltage
3.0
4.5 to 5.5
1.4
2.0
1.4
2.0
1.4
2.0
V
V
Low−Level Input
3.0
0.53
0.8
0.53
0.8
0.53
0.8
V
V
IL
Voltage
4.5 to 5.5
V
OH
High−Level Output
Voltage
V
OH
= V or V
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
IN
IH
IL
I
= −50 mA
V
I
I
= V or V
= −4 mA
= −8 mA
IN
OH
OH
IH
IL
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Low−Level Output
Voltage
V
OL
= V or V
3.0
4.5
0
0
0.1
0.1
0.1
0.1
0.1
0.1
V
IN
IH
IL
I
= 50 mA
V
I
I
= V or V
= 4 mA
= 8 mA
IN
OL
OL
IH
IL
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
Input Leakage
Current
0 v V v 5.5 V
0 to 5.5
0.1
1.0
1.0
mA
mA
IN
IN
I
Quiescent Supply
Current
0 v V v V
5.5
1.0
20
40
CC
IN
CC
I
Quiescent Supply
Current
V
= 3.4 V
5.5
1.35
1.50
1.65
mA
CCT
IN
Other Input: V
or GND
CC
I
Output Leakage
Current
V
= 5.5 V
0.0
0.0
0.5
5.0
2.5
10
mA
mA
OPD
OUT
I
3−State Leakage
Current
V
V
= V or V
0.25
2.5
OZ
IN
OUT
IH
IL
= V or
CC
GND
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)
r
f
T
= −555C
A
to +1255C
T
A
= 25 5C
Typ
T
= +855C
A
V
(V)
Test
Condition
CC
Min
Max
Min
Max
Min
Max
Symbol
Parameter
Unit
t
t
t
,
Propagation Delay, A to Y
ns
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
C = 15 pF
L
5.6
8.1
8.0
1.0
1.0
9.5
12.0
16.0
PLH
L
t
(Figures 3 and 5)
C = 50 pF
11.5
13.0
PHL
C = 15 pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
8.5
10.5
L
C = 50 pF
L
,
Output Enable Time, OE to Y
(Figures 4 and 6)
ns
ns
C = 15 pF
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
11.5
15.0
PZL
t
L
C = 50 pF
PZH
L
C = 15 pF
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
7.5
9.5
L
C = 50 pF
L
,
Output Disable Time, OE to Y
(Figures 4 and 6)
C = 15 pF
6.5
8.0
9.7
13.2
1.0
1.0
11.5
15.0
14.5
18.5
PLZ
t
L
C = 50 pF
PHZ
L
C = 15 pF
4.8
7.0
6.8
8.8
1.0
1.0
8.0
10.0
10.0
12.0
L
C = 50 pF
L
C
Input Capacitance
4
6
10
10
10.0
pF
pF
IN
C
3−State Output Capacitance
(Output in High Impedance
State)
OUT
C
Power Dissipation
Capacitance (Note 3)
5.0
14
pF
PD
3. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
PD
load. Average operating current can be obtained by the equation I
= C • V • f + I . C is used to determine the no−load
CC(OPR)
PD CC in CC PD
2
dynamic power consumption: P = C • V
• f + I • V
D
PD
CC
in CC CC.
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3
NLU1GT125
SWITCHING WAVEFORMS
V
CC
50%
OE
GND
V
CC
t
t
PLZ
PZL
50%
HIGH
IMPEDANCE
A
Y
GND
50% V
Y
Y
CC
t
PHL
t
PLH
V
V
+ 0.3V
OL
t
t
PZH PHZ
50% V
CC
− 0.3V
OH
50% V
CC
HIGH
IMPEDANCE
Figure 3. Switching Waveforms
Figure 4.
TEST POINT
1 kW
TEST POINT
OUTPUT
CONNECT TO V WHEN
CC
TESTING t
AND t
OUTPUT
PLZ
PZL.
DEVICE
UNDER
TEST
CONNECT TO GND
WHEN
DEVICE
UNDER
TEST
C *
L
C *
L
TESTING t
AND t
PHZ
PZH.
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 5. Test Circuit
Figure 6. Test Circuit
INPUT
Figure 7. Input Equivalent Circuit
Package
ORDERING INFORMATION
Device
†
Shipping
NLU1GT125MUTCG
UDFN6, 1.2 x 1.0, 0.4P
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
(Pb−Free)
NLU1GT125AMUTCG,
NLVU1GT125AMUTCG*
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
NLU1GT125CMUTCG
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
NLU1GT125
PACKAGE DIMENSIONS
UDFN6, 1.2x1.0, 0.4P
CASE 517AA
ISSUE C
EDGE OF PACKAGE
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
E
DETAIL A
REFERENCE
Bottom View
MILLIMETERS
2X
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
(Optional)
A
0.10
C
MOLD CMPD
EXPOSED Cu
TOP VIEW
A3
b
D
E
0.127 REF
2X
0.15
0.25
0.10
C
C
1.20 BSC
1.00 BSC
0.40 BSC
A3
e
L
0.30
0.40
0.15
0.50
(A3)
L1 0.00
L2 0.40
0.10
0.08
A1
DETAIL B
Side View
(Optional)
A
MOUNTING FOOTPRINT*
SEATING
PLANE
10X
C
SIDE VIEW
6X
0.42
6X
0.22
C
A1
5X L
3
1
L2
6X b
0.40
PITCH
6
4
1.07
0.10
0.05
C
A B
e
C
NOTE 3
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
NLU1GT125
PACKAGE DIMENSIONS
UDFN6, 1.2x1.0, 0.4P
CASE 517AA
ISSUE D
EDGE OF PACKAGE
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
E
DETAIL A
REFERENCE
Bottom View
MILLIMETERS
2X
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
(Optional)
A
0.10
C
MOLD CMPD
EXPOSED Cu
TOP VIEW
A3
b
D
E
0.127 REF
2X
0.15
0.25
0.10
C
C
1.20 BSC
1.00 BSC
0.40 BSC
A3
e
L
0.30
0.40
0.15
0.50
(A3)
L1 0.00
L2 0.40
0.10
0.08
A1
DETAIL B
Side View
(Optional)
A
SEATING
PLANE
MOUNTING FOOTPRINT*
10X
C
SIDE VIEW
6X
0.42
6X
0.22
C
A1
5X L
3
1
L2
6X b
6
4
0.40
PITCH
1.07
0.10
0.05
C
A B
e
C
NOTE 3
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
NLU1GT125
PACKAGE DIMENSIONS
UDFN6 1.0x1.0, 0.35P
CASE 517BX
ISSUE O
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
REFERENCE
E
2X
0.10
C
MILLIMETERS
DIM MIN
MAX
0.55
0.05
A
A1
A3
b
0.45
0.00
0.13 REF
2X
0.10
C
TOP VIEW
0.12
0.22
A3
D
E
e
L
1.00 BSC
1.00 BSC
0.35 BSC
0.05
C
C
A
0.25
0.30
0.35
0.40
L1
0.05
A1
SEATING
RECOMMENDED
C
SIDE VIEW
e
PLANE
SOLDERING FOOTPRINT*
05.4X8
6X
0.22
5X L
3
1
L1
1.18
6
4
6X b
1
0.35
0.53
M
M
0.10
C
A
B
PITCH
PKG
OUTLINE
NOTE 3
0.05
C
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NLU1GT125/D
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