NIS5112_07 [ONSEMI]
Electronic Fuse; 电子保险丝
| 型号： | NIS5112_07 |
| 厂家： | 
ONSEMI |
| 描述： | Electronic Fuse |
| 文件： | 总9页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N−channel
FET driven by an internal charge pump. This switch features a
SENSEFETt which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust
thermal protection circuit.
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MARKING
DIAGRAM
Features
• Integrated Power Device
• Power Device Thermally Protected
• No External Current Shunt Required
• Enable/Timer Pin
• Adjustable Slew Rate for Output Voltage
• 9 V to 18 V Input Range
• 30 mW Typical
• Internal Charge Pump
8
112x
AYWWG
G
SOIC−8 NB
CASE 751
8
1
1
x
= L for thermal latch off
= H for thermal auto−retry
= Assembly Location
= Year
A
Y
WW
G
• ESD Ratings: Human Body Model (HBM); 4000 V
• These are Pb−Free Devices
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
• Hard Drives
ORDERING INFORMATION
†
Device
Package
Shipping
NIS5112D1R2G
NIS5112D2R2G
SOIC−8
Latch Off
(Pb−Free)
2500
Tape & Reel
SOIC−8
Auto−Retry
(Pb−Free)
2500 /
Tape & Reel
8
V
CC
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Charge
Pump
Voltage
Regulator
Current
Limit
Current Limit
4
Overvoltage
Clamp
Source
5, 6, 7
Thermal
Latch
Voltage
Slew Rate
Enable/
Timer
Enable/Timer
3
GND
1
dV/dt
2
Figure 1. Block Diagram
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 5
NIS5112/D
NIS5112
Table 1. FUNCTIONAL PIN DESCRIPTION
Pin
Function
Description
3
Enable/Timer A high level signal on this pin allows the device to begin operation. Connection of a capacitor will delay
turn on for timing purposes. A low input signal inhibits the operation.
1
4
Ground
Negative input voltage to the device. This is used as the internal reference for the IC.
A resistor between this pin and the source pin sets the current limit level.
Source of power FET, which is also the switching node for the load.
I
Limit
5,6,7
2
Source
dV/dt
A capacitor from this pin to ground programs the slew rate of the output at turn on. This capacitor is
discharged by an internal discharge circuit when the device is disabled via the enable pin.
8
V
Positive input voltage to the device.
CC
Table 2. MAXIMUM RATINGS (Maximum ratings are those, that, if exceeded, may cause damage to the device. Electrical
characteristics are not guaranteed over this range)
Rating
Symbol
Value
Unit
Input Voltage, Operating,
Drain Voltage, Operating,
Steady−State (Input+ to Input−)
Transient (Conditions 1 ms)
V
−0.3 to 18
−0.3 to 25
V
in
Steady−State (Drain to Input−)
Transient (Conditions 1 ms)
V
−0.3 to 18
−0.3 to 25
V
DD
Drain Current, Peak (Internally Clamped)
I
25
A
A
Dpk
Drain Current, Continuous (T =25°C), (Note 2)
I
5.3
A
Davg
Thermal Resistance, Junction−to−Air
Q
JA
2
0.5 in Copper
120
110
°C/W
°C/W
2
1.0 in Copper
Thermal Resistance, Junction−to−Lead (Pin 8)
Q
27
1.0
°C/W
W
JL
Power Dissipation (T = 25°C) (Note 1)
P
max
A
Operating Temperature Range (Note 2)
Nonoperating Temperature Range
Lead Temperature, Soldering (10 Sec)
T
J
T
J
T
L
−40 to 175
−55 to 175
260
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted on FR−4 board, 1 in sq pad, 1 oz coverage.
2. Actual maximum junction temperature is limited by an internal protection circuit and will not reach the absolute maximum temperature as
specified.
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2
NIS5112
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: V = 12 V, R
= 56 W T = 25°C)
CC
LIMIT
J
Characteristics
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK))
Charging Time (Beginning of Conduction to 90% of V
T
−
−
5.0
64
−
−
ms
ms
dly
)
out
t
chg
C
dV/dt
= 1 mF, C
= 1000 mF
load
ON Resistance
(I = 2 A, T = −20°C) (Note 3)
R
−
mW
mV
pF
DSon
23.5
28
37
27.5
32
43.5
D
J
(I = 2 A, T = 25°C)
D
J
(I = 2 A, T = 100°C) (Note 3)
D
J
Off State Output Voltage
V
off
(V = 12 V , Enable Low, V , T = −20°C) (Note 3)
−
−
−
−
−
−
120
120
200
in
dc
dc
J
(V = 12 V , Enable Low, T = 25°C)
in
dc
J
(V = 12 V , Enable Low, T = 100°C) (Note 3)
in
dc
J
Output Capacitance (V = 12 V , V = 0 V , f = 10 kHz)
−
396
−
DS
dc
GS
dc
THERMAL LATCH
Shutdown Temperature (Note 3)
T
125
−
135
40
145
−
°C
°C
SD
Thermal Hysteresis (Auto Retry Only) (Note 3)
ENABLE/TIMER
T
hyst
Enable Voltage (Turn−on)
V
V
V
ENon
ENoff
(R
load
(R
load
(R
load
= 2 K, T = −20°C) (Note 3)
2.45
2.5
2.7
−
−
−
−
−
−
J
= 2 K, T = 25°C)
J
= 2 K, T = 100°C) (Note 3)
J
Enable Voltage (Turn−off)
V
(R
load
(R
load
(R
load
= 2 K, T = −20°C) (Note 3)
−
−
−
−
−
−
1.8
1.9
2.0
J
= 2 K, T = 25°C)
J
= 2 K, T = 100°C) (Note 3)
J
Charging Current (Current Sourced into Timing Cap)
I
mA
Charge
(T = −20°C) (Note 3)
67
70
71
80
83
84
90
92
96
J
(T = 25°C)
J
(T = 100°C) (Note 3)
J
OVERVOLTAGE CLAMP
Output Clamping Voltage
V
V
Clamp
(V = 18 V, T = −20°C) (Note 3)
14
14
13
15.5
15
14.5
17
16.2
16
CC
J
(V = 18 V, T = 25°C)
CC
J
(V = 18 V, T = 100°C) (Note 3)
CC
J
CURRENT LIMIT
Short Circuit Current Limit,
I
I
A
A
Lim−SS
Lim−OL
(R
extILimit
(R
extILimit
(R
extILimit
= 56 W, T = −20°C) (Note 3)
2.05
2.0
1.7
2.7
2.5
2.3
3.2
3.0
2.7
J
= 56 W, T = 25°C)
J
= 56 W, T = 100°C) (Note 3)
J
Overload Current Limit, (Note 3)
(R
extILimit
(R
extILimit
(R
extILimit
= 56 W, T = −20°C)
3.7
3.5
3.4
4.6
4.4
4.3
5.5
5.3
5.2
J
= 56 W, T = 25°C)
J
= 56 W, T = 100°C)
J
dV/dt CIRCUIT
Slew Rate
dV/dt
V/ms
(C
dV/dt
= 1 mf)
0.130
0.15
0.170
Charging Current (Current Sourced into dV/dt Cap)
I
mA
dV/dt
(T = −20°C) (Note 3)
67
70
71
80
83
84
90
92
96
J
(T = 25°C)
J
(T = 100°C) (Note 3)
J
Max Capacitor Voltage
V
−
−
V
V
max
CC
TOTAL DEVICE
Bias Current (Device Operational, Load Open, V = 12 V)
I
−
−
1.45
−
2.0
9.0
mA
V
in
Bias
Minimum Operating Voltage
3. Verified by design.
V
min
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3
NIS5112
100
10
1
I
_OL
LIMIT
I
_SS
LIMIT
0
10
100
1000
R
(W)
extILimit
Figure 2. Current Limit Adjustment
Source
+12 V
56 W
Current Limit
NIS5112
Enable signal is compatible
with open collector devices
as well as most families.
Enable/
Timer GND dV/dt
Load
1 mF
Enable
GND
(Typical operating conditions: V = 12 V, R
= 56 W, C
= 1 mF)
in
ILimit
dV/dt
Figure 3. Typical Application Circuit
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4
NIS5112
Input Voltage
Output Voltage
Slew Rate = 0.14 V/ms
Load Current
Figure 4. Turn−on Waveforms for a Resistive Load of 10 W (CdV dt = 1 mf)
/
Input Voltage
Output Voltage
Slew Rate = 0.14 V/ms
Load Current (i = C dV/dt)
Figure 5. Turn−on Waveforms for a Load Capacitance of 3,300 mf (CdV dt = 1 mf)
/
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5
NIS5112
Input Voltage
V
out
Regulated at 15 V
Load Current
Figure 6. Turn−on Waveforms for an Overvoltage Condition (10 W Resistive Load)
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6
NIS5112
DEVICE OPERATION
Basic Operation
This device is a self−protected, resettable, electronic fuse.
It contains circuits to monitor the input voltage, output
current, die temperature, turn−on di/dt and turn−on dV/dt, as
well as an enable/timer function.
On application of the input voltage, the device will apply
the input voltage to the load based on the restrictions of the
controlling circuits. The dV/dt of the output voltage can be
programmed by the addition of a capacitor to the dV/dt pin,
or if left open, the output current will be limited by the
internally controlled di/dt.
Source
80 mA
R
R
+
−
Enable
The device will remain on as long as the temperature does
not exceed the 135°C limit that is programmed into the chip.
The current limit circuit does not shut down the part but will
reduce the conductivity of the FET to maintain a constant
current as long as it remains at the set level. The input
overvoltage clamp also does not shut down the part, but will
limit the output voltage to 15 V in the event that the input
exceeds that level.
dV/dt
Figure 7. dV/dt Circuit
The device can be turned on and off by the enable/timer
function, which can also be used to reset the device after a
thermal fault if the thermal latch version is chosen.
An internal charge pump provides bias for the gate voltage
of the internal N−channel power FET and also for the current
limit circuit. The remainder of the control circuitry operates
Overvoltage Clamp
The overvoltage clamp consists of an amplifier and
reference. It monitors the output voltage and if the output
voltage exceeds 15 V, the gate drive of the main FET is
reduced to limit the output. This is intended to allow
operation through transients while protecting the load. If an
overvoltage condition exists for many seconds, the device
may overheat due to the voltage drop across the FET
combined with the load current. In this event, the thermal
protection circuit would shut down the device.
between the input voltage (V ) and ground.
CC
dV/dt
This circuit is comprised of an operational amplifier and
current source as shown in Figure 7. The enable circuit
controls a FET that keeps the slew−rate capacitor discharged
any time the device is disabled. When the enable pin is
released (low−to−high transition) or when power is applied
with the enable pin in a high state, the dV/dt capacitor begins
to charge due to the 80 mA in the current source. The
amplifier controls the output voltage and tracks the voltage
on the dV/dt cap scaled by a factor of 2. The output voltage
will continue to ramp higher until it reaches the input
voltage, or until the 15 V clamp limits it.
Enable/Timer
The enable/timer pin can function either as a direct enable
pin, or as a time delay. In the enable mode, an open collector
device is connected to this pin. When the device is in its low
impedance mode, this pin is low and the operation of the chip
is disabled. If a time delay is required, a capacitor is added
to this pin.
If a capacitor is added without an open collector device,
the turn on will be delayed from the time at which the UVLO
voltage is reached. If an open collector device is also used,
the delay will start from the time that it goes into its high
impedance state. The capacitor is charged by an internal
current source of 80 mA (typical).
The equation for the output slew rate is
dV/dt = (I/C
Where:
) x 2.
dV/dt
I – is 80 mA (internal current source)
– is the desired dV/dt capacitor value.
C
dV/dt
The nominal trip voltage of the comparator is 2.5 V and
was designed to be compatible with most logic families. In
general, logic gates can be tied directly to this pin, but it is
recommended that this be tested.
The dV/dt ramp begins with a small step of about 200 mV.
This step causes a current surge into the output load
capacitance which can be seen in Figure 5. The peak level
of this surge will be limited to the overload level of the
current limit.
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7
NIS5112
There is an inherent delay in the turn on of the electronic
Thermal Protection Circuit
fuse, due to the method of gate drive used. The gate of the
power FET is charged through a high impedance resistor,
and from the time that the gate starts charging until the time
that it reaches its threshold voltage, there will be no
conduction. Once the gate reaches its threshold voltage, the
output current will begin a controlled ramp up phase.
This delay will be added to any timing delay due to the
enable/timer circuit. Figure 8 shows a simplified diagram of
the enable/timer circuit.
The temperature limit circuit senses the temperature of the
Power FET and removes the gate drive if the maximum level
is exceeded. The NIS5112 device has two different thermal
limit versions, auto−retry and latch off.
Auto−Retry Version
The device will shut down when the thermal limit
threshold is reached (T = 135°C, typical) and will not turn
J
back on until the die temperature reduces down to 95°C
(40°C hysteresis, typical). It will keep auto−retrying until
the fault condition is removed or power is turned−off.
Latch−Off Version
For the latch−off version, the device will shut down when
80 mA
Enable/
Timer
the thermal limit threshold is reached (T = 135°C, typical)
J
Enabled
+
−
and will remain off until power is reset.
2.5 V
Figure 8. Simplified Schematic Diagram of the
Enable/Timer Circuit
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8
NIS5112
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
−Z−
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
The product described herein (NIS5112), may be covered by one or more of the following U.S. patents: 6,781,502; 7,099,135. Other patents may be pending.
SENSEFET is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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NIS5112/D
相关型号：
NIS5132MN1T1G
1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO10, 3 X 3 MM, 0.50 MM PITCH, LEAD FREE, DFN-10
ONSEMI
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