NGTB30N60L2WG [ONSEMI]

IGBT，N 沟道，带低 VF 开关二极管，600V，30A，VCE(sat)=1.4V;


型号：	NGTB30N60L2WG
厂家：	ONSEMI
描述：	IGBT，N 沟道，带低 VF 开关二极管，600V，30A，VCE(sat)=1.4V 开关栅双极性晶体管二极管
文件：	总8页 (文件大小：833K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NGTB30N60L2WG

N-Channel IGBT

www.onsemi.cn

低VF开关二极管内置

600V, 30A, VCE(sat);1.4V

主要特长

 IGBT V (sat)=1.4V typ. (I =30A, V =15V)

电气连接图

 IGBT I =100A (Tc=25C)

 IGBT t =80ns typ.

 高频应用用开关损失低

 最高结温Tj=175C

 Diode V =1.7V typ. (I =30A)

 Diode t =70ns typ.

 5s 抗短路能力

N-channel

 不含铅和卤, 遵守RoHS

应用

 白物家电的功率因数校正

规格

绝对最大额定值 / Ta = 25C (除非特殊指定)

TO−247

CASE 340AK

参数

记号

值

单位

集电极-发射极电压(Collector to Emitter Voltage)

栅极-发射极电压(Gate to Emitter Voltage)

600

20

100

CES

GES

印刷图

@Tc=25C *²

@Tc=100C *²

集电极电流(DC)

受限于Tjmax

C *

受脉冲作用的集电极电流

@Tc=100C *²

Pulsed collector current,

Cpulse

GTB30N

tp=100ms 受限于Tjmax

LOT No.

60L2

受脉冲作用的集电极电流(Pulsed collector current)

tp=1ms 受限于Tjmax

232

Cpeak

二极管平均输出电流(Diode Average Output Current)

功耗(Power Dissipation)

225

175

Tc=25C

(我司的理想散热条件) *

C

结温(Junction Temperature)

Tstg

55 to +175

储存温度(Storage Temperature)

注: *1 集电极电流由下式计算:

Tjmax - Tc

(j-c)×V (sat) (I (Tc))

th CE

I (Tc)=

*2 我司的条件为背面散热。

方法为:器件的背面涂上硅脂, 然后将该器件贴在铝制的水冷散热器上。

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of this data sheet.

September 2015 - Rev. 2

Publication Order Number :

NGTB30N60L2WGCN/D

NGTB30N60L2WG

电气特性/ Ta = 25C (除非特殊指定)

值

参数

记号

条件

单位

min

600

typ

max

集电极-发射极击穿电压

)

=500A, V =0V

C GE

BR CES

(Collector to Emitter Breakdown Voltage)

Tc=25C

A

集电极-发射极截止电流

=600V, V =0V

CES

(Collector to Emitter Cutoff Current)

Tc=150C

栅极-发射极漏电流

=20V, V

=0V

100

GES

(Gate to Emitter Leakage Current)

栅极-发射极阈值电压

(th)

=20V, I =250A

4.5

6.5

1.6

(Gate to Emitter threshold voltage)

Tc=25C

Tc=150C

Tc=25C

1.4

集电极-发射极饱和电压

=15V, I =30A

(Collector to Emitter Saturated Voltage)

正向二极管电压(Forward Diode Voltage)

(

)

1.7

1.65

1.7

CE sat

=15V, I =50A

输入电容(Input Capacitance)

输出电容(Output Capacitance)

I =30A

Cies

4130

集电极-发射极击穿电压

Coes

114

=20V, f=1MHz

(Collector to Emitter Breakdown Voltage)

反向传输电容

Cres

(Reverse Transfer Capacitance)

开启迟延时间(Turn-on delay time)

t (on)

100

上升时间(Rise Time)

=300V, I =30A

=30, L=200H

开启时间(Turn-ON Time)

ton

t (off)

540

390

关断迟延时间(Turn-OFF Delay Time)

下降时间(Fall Time)

=0V/15V

Vclamp=400V

关断时间(Turn-OFF Time)

开启能量(Turn-ON Energy)

关断能量(Turn-OFF Energy)

开启迟延时间(Turn-on delay time)

上升时间(Rise Time)

toff

500

0.31

1.14

参照图1, 图2

Eon

Eoff

t (on)

=300V, I =50A

开启时间(Turn-ON Time)

ton

t (off)

650

380

=30, L=200H

关断迟延时间(Turn-OFF Delay Time)

下降时间(Fall Time)

=0V/15V

Vclamp=400V

关断时间(Turn-OFF Time)

开启能量(Turn-ON Energy)

关断能量(Turn-OFF Energy)

总栅极电荷(Total Gate Charge)

栅极-发射极电荷(Gate to Emitter charge)

toff

530

0.638

2.755

166

参照图1, 图2

Eon

Eoff

Qge

=300V, V =15V, I =30A

栅极-集电极米勒电荷

Qgc

(Gate to Collector “Miller” Charge)

二极管反向恢复时间

I =10A, di/dt=100A/s, V =50V, See Fig.3

F CC

(Diode Reverse Recovery Time)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

热特性/ Ta = 25C (除非特殊指定)

参数

记号

条件

值

单位

热阻IGBT(结到外壳

Thermal Resistance IGBT (Junction to Case)

热阻二极管结到外壳

Thermal Resistance Diode (Junction to Case)

热阻结到环境

)

Tc=25C

Rth(j-c) (IGBT)

Rth(j-c) (Diode)

Rth(j-a)

0.67

1.5

C /W

(我司的理想散热条件)*2

Tc=25C

(

)

(我司的理想散热条件)*2

(

)

Thermal Resistance (Junction to Ambient)

注: *2 我司的条件为背面散热。

方法为:器件的背面涂上硅脂, 然后将该器件贴在铝制的水冷散热器上。.

www.onsemi.cn

NGTB30N60L2WG

www.onsemi.cn

NGTB30N60L2WG

www.onsemi.cn

NGTB30N60L2WG

www.onsemi.cn

NGTB30N60L2WG

www.onsemi.cn

NGTB30N60L2WG

图1 : 开关时间测试电路

图2 : 时间图

90%

10%

90%

10%

t (off)

t (on)

off

图3 : 反向恢复时间测试电路

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NGTB30N60L2WG

封装尺寸

TO-247

CASE 340AK

ISSUE O

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

SEATING

PLANE

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER

SIDE. THESE DIMENSIONS ARE MEASURED AT THE

OUTERMOST EXTREME OF THE PLASTIC BODY.

4. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

5. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMEN-

SIONS D1 AND E1.

6. LEAD FINISH UNCONTROLLED WITHIN L1.

7. P TO HAVE A MAXIMUM DRAFT ANGLE OF 1.5 TO

THE TOP OF THE PART WITH A MAXIMUM DIAMETER

OF 3.91.

MILLIMETERS

INCHES

MIN

DIM MIN

MAX

5.31

2.59

2.49

1.40

2.39

3.43

0.89

21.46

MAX

0.209

0.102

0.098

0.055

0.094

0.135

0.035

0.845

4.70

2.21

1.50

1.00

1.65

2.59

0.38

20.80

0.185

0.087

0.059

0.039

0.065

0.102

0.015

0.819

0.515

0.020

0.610

0.530

0.170

^2Xb2

0.635

B A

D1 13.08

0.51

1.35

0.053

0.640

0.25

B A

15.49

16.26

E1 13.46

4.32

5.49

0.216

1 : Gate

5.46 BSC

0.215 BSC

2 : Collector

3 : Emitter

19.81

20.32

4.50

3.66

6.20

0.780

0.800

0.177

0.144

0.244

3.56

5.38

6.15 BSC

0.140

0.212

0.242 BSC

订单及封装情况

器件名称

出货包装

注解

不含铅和卤

封装

NGTB30N60L2WG

TO-247-3L

pcs. / tube

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States

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further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,

nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including

without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can

and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

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NGTB30N60L2WG [ONSEMI]

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