NGTB40N120IHRWG [ONSEMI]
IGBT, 1200V 40A FS2-RC Induction Heating;
| 型号： | NGTB40N120IHRWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 1200V 40A FS2-RC Induction Heating 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB40N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
http://onsemi.com
40 A, 1200 V
Features
V
CEsat = 2.30 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device
Eoff = 0.95 mJ
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
G
80
40
TO−247
CASE 340AL
C
@ TC = 100°C
E
Pulsed collector current, T
ICM
120
A
A
pulse
limited by T
, 10 ms pulse,
Jmax
V
GE
= 15 V
Diode forward current
@ TC = 25°C
IF
MARKING DIAGRAM
80
40
@ TC = 100°C
Diode pulsed current, T
limited
IFM
VGE
PD
120
A
pulse
by T
, 10 ms pulse,
Jmax
= 0 V
V
GE
Gate−emitter voltage
Transient Gate−emitter voltage
(T = 5 ms, D < 0.10)
$20
$25
V
40N120IHR
AYWWG
pulse
Power Dissipation
W
°C
@ TC = 25°C
@ TC = 100°C
384
192
Operating junction temperature
range
T
J
−40 to +175
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Storage temperature range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
30 Units / Rail
NGTB40N120IHRWG TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
January, 2014 − Rev. 1
NGTB40N120IHR/D
NGTB40N120IHRWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
−
−
2.30
2.70
2.55
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.2
2.8
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
5320
124
100
225
36
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 40 A, V = 15 V
C GE
ge
gc
98
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
230
120
0.95
245
180
2.10
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 600 V, I = 40 A
C
CC
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 600 V, I = 40 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 40 A
V
F
−
−
2.10
3.30
2.60
−
GE
F
V
GE
= 0 V, I = 40 A, T = 175°C
F
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
250
200
250
T = 25°C
J
13 V
11 V
T = 150°C
J
V
GE
= 20 to 15 V
200
150
100
50
V
= 20 to 15 V
GE
13 V
11 V
150
100
50
10 V
10 V
9 V
9 V
8 V
7 V
8 V
7 V
7
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
250
200
160
140
120
100
80
T = −40°C
J
V
GE
= 20 to 13 V
V
CE
= 20 V
T = 25°C
J
11 V
T = 150°C
J
150
100
50
10 V
60
40
9 V
7 V
20
8 V
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
10,000
1000
C
ies
I
= 80 A
C
I
C
= 40 A
= 20 A
I
C
100
10
C
oes
C
res
T = 25°C
J
0
10
20
30 40 50
60
70
80 90 100
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
http://onsemi.com
3
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
8
T = 25°C
J
6
4
V
V
= 600 V
= 15 V
= 40 A
CE
T = 150°C
J
2
0
GE
I
C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.5
2
1000
100
V
V
= 600 V
= 15 V
= 40 A
CE
GE
I
C
t
d(off)
Rg = 10 W
E
off
1.5
1
t
f
V
V
= 600 V
= 15 V
= 40 A
CE
0.5
0
GE
I
C
Rg = 10 W
10
0
20
40
60
80
100
120
140 160
0
20
40
60
80
100
120
140
160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
4
3
2
1
0
1000
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
Rg = 10 W
t
d(off)
E
off
t
f
100
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
Rg = 10 W
10
5
20
35
50
65
80
5
20
35
50
65
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
http://onsemi.com
4
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
10000
1000
100
4
3.5
3
E
off
t
d(off)
2.5
2
t
f
1.5
1
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
T = 150°C
0.5
0
T = 150°C
J
J
I
C
= 40 A
I
C
= 40 A
15
10
5
15
25
35
45
55
65
75
85
5
25
35
45
55
65
75
85
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
3
2.5
2
1000
E
off
t
d(off)
t
f
1.5
1
100
I
V
= 40 A
C
I
V
= 40 A
C
= 15 V
GE
= 15 V
GE
0.5
T = 150°C
Rg = 10 W
J
T = 150°C
Rg = 10 W
J
0
10
250 300 350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
250 300 350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
V
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
10
1 ms
V
GE
= 15 V, T = 125°C
C
100 ms
50 ms
dc operation
1
Single Nonrepetitive
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
http://onsemi.com
5
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
140
120
100
80
1500
1450
T
C
= 80°C
1400
1350
1300
1250
1200
T
= 110°C
= 10 W,
C
60
40
V
V
= 600 V, T ≤ 175°C, R
J gate
CE
20
= 0/15 V, T
= 80°C or 110°C
GE
case
(as noted), D = 0.5
0
0.01
0.1
1
10
100
1000
−40
−15
10
35
60
85
110 135
FREQUENCY (kHz)
T , JUNCTION TEMPERATURE (°C)
J
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
1
R
= 0.392
Case
q
JC
50% Duty Cycle
R (°C/W)
0.04597
0.000101
0.009460 0.001057
0.004201 0.007527
0.020965 0.004770
0.040205 0.007965
0.003094 0.323174
0.037895 0.083449
t (sec)
20%
10%
5%
i
i
0.1
0.01
0.000218
0.031311
R
C
R
C
R
Junction
1
1
2
2
n
C = t /R
i
i
i
2%
C
n
0.016194 0.617513
0.000100 316.228
0.246889 0.405040
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
Single Pulse
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
http://onsemi.com
6
NGTB40N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
http://onsemi.com
7
NGTB40N120IHRWG
Figure 23. Definition of Turn On Waveform
http://onsemi.com
8
NGTB40N120IHRWG
Figure 24. Definition of Turn Off Waveform
http://onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明