NGTB35N60FL2WG [ONSEMI]
IGBT, 600V 35A FS2 Solar/UPS;
| 型号： | NGTB35N60FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 600V 35A FS2 Solar/UPS 双极性晶体管 |
| 文件： | 总9页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB35N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
35 A, 600 V
CEsat = 1.70 V
• Extremely Efficient Trench with Field Stop Technology
• T
= 175°C
V
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
EOFF = 0.28 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
600
Collector current
@ TC = 25°C
A
G
70
35
TO−247
CASE 340AL
C
@ TC = 100°C
E
Diode Forward Current
@ TC = 25°C
I
F
A
70
35
@ TC = 100°C
MARKING DIAGRAM
Diode Pulsed Current
I
120
120
5
A
A
FM
T
Limited by T Max
PULSE
J
Pulsed collector current, T
I
pulse
CM
limited by T
Jmax
Short−circuit withstand time
= 15 V, V = 400 V,
t
ms
SC
V
GE
CE
35N60FL2
AYWWG
T ≤ +150°C
J
VGE
V
V
Gate−emitter voltage
$20
$30
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
300
150
A
Y
= Assembly Location
= Year
Operating junction temperature
range
T
−55 to +175
°C
J
WW
G
= Work Week
= Pb−Free Package
Storage temperature range
T
stg
−55 to +175
260
°C
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NGTB35N60FL2WG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 5
NGTB35N60FL2W/D
NGTB35N60FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.50
1.00
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 35 A
V
CEsat
1.50
−
1.70
2.20
2.00
−
GE
C
V
GE
= 15 V, I = 35 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.2
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
3115
149
88
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
125
30
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 480 V, I = 35 A, V = 15 V
ge
gc
C
GE
63
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
72
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
132
75
T = 25°C
d(off)
J
V
= 400 V, I = 35 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
0.84
0.28
1.12
70
V
= 0 V/ 15 V
mJ
ns
on
off
GE
E
ts
t
t
d(on)
t
r
38
Turn−off delay time
135
96
T = 150°C
d(off)
J
V
= 400 V, I = 35 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
1.05
0.50
1.55
V
= 0 V/ 15 V
mJ
on
off
GE
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 35 A
V
F
1.50
−
2.20
2.25
2.90
−
V
GE
F
V
GE
= 0 V, I = 35 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
68
265
7
−
−
−
−
−
−
ns
nC
A
rr
T = 25°C
J
Q
I = 35 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
156
836
8.43
ns
nC
A
T = 175°C
J
Q
I = 35 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
140
120
100
80
140
T = 25°C
J
T = 150°C
J
15 V
13 V
120
100
80
60
40
20
0
V
GE
= 20 to 15 V
V
GE
= 20 to 17 V
13 V
60
11 V
10 V
11 V
10 V
40
9 V
8 V
7 V
7 V
20
9 V
8 V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
120
100
80
140
120
100
80
T = −55°C
J
V
GE
= 20 to
15 V
T = 25°C
J
13 V
T = 150°C
J
60
60
11 V
10 V
40
40
20
20
7 V
9 V
8 V
0
0
0
1
2
3
4
5
6
7
8
0
4
6
8
10
12
14
16
18
2
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
10,000
1000
I
= 70 A
C
C
ies
I
I
= 35 A
C
= 15 A
= 5 A
C
C
oes
100
10
I
C
C
res
T = 25°C
J
0
10
20
30 40 50
60
70
80 90 100
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
T = 25°C
J
T = 150°C
J
8
6
4
2
0
V
V
= 480 V
= 15 V
= 35 A
CE
GE
I
C
40
60
80
0
0.5
1.0
1.5
2.0
2.5 3.0
3.5
4.0
0
20
100
120 140
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.75
1.5
1.25
1
1000
V
V
= 400 V
= 15 V
= 35 A
CE
V
V
= 400 V
= 15 V
= 35 A
CE
GE
GE
I
C
I
C
Rg = 10 W
Rg = 10 W
t
E
on
d(off)
t
f
100
0.75
0.5
0.25
0
t
d(on)
E
off
t
r
10
0
20
40
60
80
100
120
140 160
0
20
40
60
80
100
120
140
160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3.5
3
1000
V
= 400 V
= 15 V
V
V
= 400 V
= 15 V
CE
CE
V
GE
GE
T = 150°C
T = 150°C
J
J
Rg = 10 W
Rg = 10 W
2.5
2
E
on
t
t
d(off)
t
f
100
1.5
1
d(on)
E
off
t
r
0.5
0
10
15 20 25 30 35 40 45 50 55 60 65 70 75
15 20 25 30 35 40 45 50 55 60 65 70 75
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
10000
4
3.5
3
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
E
on
I
C
= 35 A
1000
t
t
d(off)
2.5
2
t
f
1.5
1
d(on)
100
10
V
V
= 400 V
= 15 V
E
off
CE
t
r
GE
0.5
0
T = 150°C
J
I
= 35 A
75
C
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
85
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
2
1.8
1.6
1.4
1.2
1
1000
100
10
I
V
= 35 A
C
I
V
= 35 A
C
= 15 V
E
GE
on
= 15 V
GE
T = 150°C
Rg = 10 W
J
T = 150°C
Rg = 10 W
J
t
t
d(off)
t
f
E
0.8
0.6
0.4
0.2
0
off
d(on)
t
r
150 200 250 300 350 400 450 500 550 600
, COLLECTOR−EMITTER VOLTAGE (V)
175 225
275 325
375 425
475 525 575
V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
10
V
GE
= 15 V, T = 125°C
C
1 ms
100 ms
100
10
1
50 ms
dc operation
Single Nonrepetitive
1
Pulse T = 25°C
C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
160
140
120
100
80
T = 175°C, I = 35 A
J
F
T = 175°C, I = 35 A
J
F
T = 25°C, I = 35 A
T = 25°C, I = 35 A
J
F
J
F
0.5
0
60
40
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
30
20
3.5
3.0
2.5
2.0
I = 60 A
F
T = 175°C, I = 35 A
J
F
I = 50 A
F
I = 35 A
F
T = 25°C, I = 35 A
J
F
10
0
1.5
1.0
100
300
500
700
900
1100
−75 −50 −25
0
25 50 75 100 125 150 175 200
di /dt, DIODE CURRENT SLOPE (A/ms)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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6
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.50
q
JC
20%
10%
5%
2%
R (°C/W)
t (sec)
i
i
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
0.01
i
i
i
C
n
0.001
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 23. IGBT Transient Thermal Impedance
1
R
= 1.0
q
JC
50% Duty Cycle
20%
10%
R (°C/W)
t (sec)
i
i
0.015509 0.000064
0.020310 0.000492
0.022591 0.001400
0.050667
0.93366
0.195285
0.133203
0.173839
0.251384
0.039982
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
0.1
0.001974
0.003387
0.005121
0.023740
0.047425
0.125795
2.501137
5%
2%
i
i
i
C
n
Single Pulse
Duty Factor = t /t
1 2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.01
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 24. Diode Transient Thermal Impedance
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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