NGTB30N120L2WG [ONSEMI]
IGBT，1200V 30A FS2 低 VCEsat;
| 型号： | NGTB30N120L2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V 30A FS2 低 VCEsat 双极性晶体管 |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
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Features
30 A, 1200 V
• Extremely Efficient Trench with Field Stop Technology
VCEsat = 1.70 V
• T
= 175°C
Jmax
Eoff = 1.4 mJ
• Soft Fast Reverse Recovery Diode
• Optimized for Low V
CEsat
C
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Motor Drive Inverter
• Industrial Switching
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
60
30
G
TO−247
CASE 340AL
@ TC = 100°C
C
E
Pulsed collector current, T
ICM
120
A
A
pulse
limited by T
, 10 ms Pulse,
Jmax
V
GE
= 15 V
Diode forward current
@ TC = 25°C
IF
MARKING DIAGRAM
60
30
@ TC = 100°C
Diode pulsed current, T
limited
IFM
120
A
V
pulse
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
VGE
$20
30
30N120L2
AYWWG
pulse
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
534
267
Short Circuit Withstand Time
T
10
ms
°C
SC
V
GE
= 15 V, V = 500 V, T ≤ 150°C
CE J
Operating junction temperature
range
T
−55 to +175
J
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
Storage temperature range
T
−55 to +175
260
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NGTB30N120L2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
NGTB30N120L2W/D
NGTB30N120L2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.85
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 30 A
V
CEsat
−
−
1.70
2.07
1.90
−
GE
C
V
GE
= 15 V, I = 30 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
1.0
2
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
7500
200
140
310
61
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 30 A, V = 15 V
ge
gc
C
GE
150
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
116
35
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
285
175
4.4
1.4
5.8
110
36
T = 25°C
d(off)
J
V
= 600 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
GE
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
300
331
5.5
2.5
8.0
T = 175°C
d(off)
J
V
= 600 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 30 A
V
t
−
−
1.50
1.40
1.70
−
V
GE
F
F
V
GE
= 0 V, I = 30 A, T = 175°C
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
450
7.85
32
−
−
−
ns
mc
A
J
rr
I = 30 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
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2
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
120
T = 25°C
T = 150°C
J
J
V
= 20 V
to 13 V
V
= 20 V
to 13 V
GE
GE
100
80
60
40
20
0
11 V
11 V
10 V
10 V
9 V
8 V
9 V
8 V
7 V
7 V
7
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
T = −55°C
J
V
GE
= 20 V
to 13 V
11 V
10 V
T = 150°C
J
7 V
9 V
6
T = 25°C
J
8 V
7
0
1
2
3
4
5
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
3.00
100000
10000
1000
100
T = 25°C
J
I
= 60 A
C
C
ies
2.50
2.00
1.50
1.00
0.50
0.00
I
C
= 30 A
I
C
= 15 A
C
oes
C
res
10
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10 20
30 40 50
60 70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
8
T = 25°C
J
V
CE
= 600 V
T = 150°C
J
6
4
V
V
= 600 V
= 15 V
GE
CE
2
0
I
C
= 30 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
7
6
1000
100
10
E
on
t
d(off)
5
4
3
2
1
0
t
f
t
d(on)
E
off
t
r
V
V
= 600 V
= 15 V
= 30 A
CE
V
V
= 600 V
= 15 V
CE
GE
GE
I
C
I
C
= 30 A
Rg = 10 W
120 140
T , JUNCTION TEMPERATURE (°C)
Rg = 10 W
120 140 160
T , JUNCTION TEMPERATURE (°C)
0
20
40
60
80
100
160
0
20
40
60
80
100
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
20
18
16
14
12
10
8
1000
100
10
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
t
d(off)
Rg = 10 W
E
on
t
f
t
d(on)
E
6
off
t
r
V
V
= 600 V
= 15 V
T = 150°C
CE
4
GE
2
J
Rg = 10 W
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
10000
14
12
10
8
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
E
on
T = 150°C
T = 150°C
J
t
J
d(off)
I
C
= 30 A
I = 30 A
C
1000
100
10
t
d(on)
t
f
6
E
4
off
t
r
2
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
1000
9
8
7
6
5
4
3
2
1
0
t
d(off)
E
on
t
f
t
d(on)
100
E
off
t
r
V
= 15 V
GE
V
= 15 V
T = 150°C
= 30 A
Rg = 10 W
GE
T = 150°C
J
J
I
C
= 30 A
I
C
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
10
350 400 450 500 550
350 400 450 500 550
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
CE
V
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
dc operation
100 ms
1 ms
1
Single Nonrepetitive
10
1
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
C
GE
0.01
1
10
100
1000
10000
1
10
100
1000
10000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
140
120
100
80
V
CE
= 600 V, R = 10 W, V = 0/15 V
G GE
T
C
= 80°C
60
40
T
C
= 110°C
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 19. Collector Current vs. Switching
Frequency
1
0.1
R
= 0.277
q
JA
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
i
i
0.048747 0.006487
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
0.025253 1.252250
0.01
2%
n
0.001
0.0001
Duty Factor = t /t
1
2
Single Pulse
1E−05
Peak T = P
x Z
+ T
JC
q
J
DM
C
1E−06
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 20. IGBT Transient Thermal Impedance
1
R
= 0.848
q
JC
50% Duty Cycle
R (°C/W) C (J/°C)
0.017247 0.000058
i
i
20%
10%
0.000213
0.022447
0.026328
0.063916
0.118778
0.075016
0.061573
0.014848
0.000446
0.001201
0.001565
0.002662
0.013330
0.051358
0.068631
0.124296
R
C
R
C
R
Junction
Case
1
1
2
n
0.1
5%
2%
C
2
n
0.145707
0.254415
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.062512 1.608971
0.01
1E−06
1E−05
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 21. Diode Transient Thermal Impedance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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